Laser reflectometry in situ monitoring structural and growth effects on the electron cyclotron resonance etching of In[sub 0.49]Ga[sub 0.51]P layers in Al-free laser structures

2001 ◽  
Vol 19 (1) ◽  
pp. 192 ◽  
Author(s):  
S. N. M. Mestanza ◽  
N. C. Frateschi
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
In Situ Monitoring ◽  
Growth Effects ◽  
Laser Reflectometry

Characterization and in situ monitoring of a novel compact electron cyclotron resonance plasma source

1995 ◽  
Vol 66 (11) ◽  
pp. 5252-5256 ◽  
Author(s):  
Patrick O’Keeffe ◽  
C. O’Morain ◽  
S. Den ◽  
Y. Hayashi ◽  
S. Komuro ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Plasma Source ◽  
Electron Cyclotron ◽  
In Situ Monitoring ◽  
Electron Cyclotron Resonance Plasma ◽  
Resonance Plasma

In-Situ Monitoring by Mass Spectrometry for GaAs Etched with An Electron Cyclotron Resonance Source

1993 ◽  
Vol 324 ◽  
Author(s):  
D. J. Kahaian ◽  
S. W. Pang
Keyword(s):  
Mass Spectrometry ◽  
Cyclotron Resonance ◽  
Etch Rate ◽  
Electron Cyclotron Resonance ◽  
Diagnostic Technique ◽  
Electron Cyclotron ◽  
In Situ Monitoring ◽  
Rf Power ◽  
Dc Bias

AbstractQuadrupole mass spectrometry (QMS) has been used as an in-situ diagnostic technique for GaAs etched with an electron cyclotron resonance source. Changes in the detected signal intensities for reactive species and etch products have been related to corresponding changes in the etch rate as several process parameters were varied. The detected 75As+ and to a lesser degree, 35C1+ and 70C12+, were observed to follow etch rate as microwave power, rf power, source to sample distance, temperature, and pressure were varied. The self-induced dc bias (IVdcl) determines the etch rate dependence on etch time. The time delay before saturation of the monitored 75As+ signal corresponding to a constant etch rate is inversely proportional to IVdcl. The addition of N2/O2 in a 4:1 ratio to constitute 15% of the total discharge resulted in a 95% decrease in the intensity of the monitored 75As+ signal. The measured etch rate decreased by 75%.

Basic experiments on in-situ magnetized boronization by electron cyclotron resonance discharges

1997 ◽  
Vol 241-243 ◽  
pp. 1217-1221 ◽  
Author(s):  
H. Kokura ◽  
K. Sasaki ◽  
H. Toyoda ◽  
T. Mizuuchi ◽  
K. Kondo ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Basic Experiments

Electron cyclotron resonance etching of semiconductor structures studied by in-situ spectroscopic ellipsometry

1993 ◽  
Vol 233 (1-2) ◽  
pp. 253-255 ◽  
Author(s):  
Suraiya Nafis ◽  
Natale J. Ianno ◽  
Paul G. Snyder ◽  
William A. McGahan ◽  
Blaine Johs ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Semiconductor Structures
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