Highly thermally stable in situ SiNX passivation AlGaN/GaN enhancement-mode high electron mobility transistors using TiW refractory gate structure
2013 ◽
Vol 31
(5)
◽
pp. 051212
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2021 ◽
Vol 135
◽
pp. 106109
2013 ◽
Vol 52
(8S)
◽
pp. 08JN02
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2015 ◽
Vol 764-765
◽
pp. 486-490