scholarly journals Role of ionization fraction on the surface roughness, density, and interface mixing of the films deposited by thermal evaporation, dc magnetron sputtering, and HiPIMS: An atomistic simulation

2019 ◽  
Vol 37 (3) ◽  
pp. 031306 ◽  
Author(s):  
Movaffaq Kateb ◽  
Hamidreza Hajihoseini ◽  
Jon Tomas Gudmundsson ◽  
Snorri Ingvarsson
Keyword(s):  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Atomistic Simulation ◽  
Thermal Evaporation ◽  
Dc Magnetron Sputtering ◽  
Ionization Fraction ◽  
Interface Mixing

Growth of TiO2 thin films on Si(001) and SiO2 by reactive high power impulse magnetron sputtering

2011 ◽  
Vol 1352 ◽  
Author(s):  
F. Magnus ◽  
B. Agnarsson ◽  
A. S. Ingason ◽  
K. Leosson ◽  
S. Olafsson ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
High Power ◽  
Amorphous Matrix ◽  
Dc Magnetron Sputtering ◽  
Tio2 Thin Films ◽  
Temperature Range ◽  
Order Of Magnitude

ABSTRACTThin TiO2 films were grown on Si(001) and SiO2 substrates by reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at temperatures ranging from 300 to 700 °C. Both dcMS and HiPIMS produce polycrystalline rutile TiO2 grains, embedded in an amorphous matrix, despite no postannealing taking place. HiPIMS results in significantly larger grains, approaching 50% of the film thickness at 700 °C. In addition, the surface roughness of HiPIMS-grown films is below 1 nm rms in the temperature range 300–500 °C which is an order of magnitude lower than that of dcMS-grown films. The results show that smooth, rutile TiO2 films can be obtained by HiPIMS at relatively low growth temperatures, without postannealing.

FeZrN films: Role of dc magnetron sputtering conditions in the formation of their elemental and phase compositions

2020 ◽  
Vol 698 ◽  
pp. 137876 ◽  
Author(s):  
E.N. Sheftel ◽  
V.A. Tedzhetov ◽  
E.V. Harin ◽  
G.Sh. Usmanova ◽  
A.L. Dyachkov
Keyword(s):  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering

Bi-Ge-Sb-Te Films for Reversible Phase-Change Optical Recording

2006 ◽  
Vol 118 ◽  
pp. 293-298 ◽  
Author(s):  
Su Shia Lin
Keyword(s):  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Phase Change ◽  
High Speed ◽  
Optical Recording ◽  
Dc Magnetron Sputtering ◽  
Aging Test ◽  
Optical Disks ◽  
Reversible Phase

The Bi-Ge-Sb-Te phase-change recording films were prepared by DC magnetron sputtering of Bi5Ge9Sb68Te18 and Bi5Ge3Sb74Te18 targets, individually. The surface roughness of Bi5Ge9Sb68Te18 film was relatively low. At the recording speed of 27.92 m/s, the jitter value of Bi5Ge9Sb68Te18 disk was 21.33%, but Bi5Ge3Sb74Te18 disk could not be recorded. After the aging test, the reflectivity change (Rbef.−Raft.) of Bi5Ge9Sb68Te18 film was obviously less. It could be found that the Bi5Ge9Sb68Te18 film was suitable for high-speed recording and showed the better archival life stability. As the results, the recording performance and archival life stability of phase-change optical disks were dominated by the composition of recording film.

The role of sulphur in the sulfurization of CZTS layer prepared by DC magnetron sputtering from a single quaternary ceramic target

2018 ◽  
Vol 44 (10) ◽  
pp. 11597-11602 ◽  
Author(s):  
Jinchun Jiang ◽  
Linquan Zhang ◽  
Wei Wang ◽  
Ruijiang Hong
Keyword(s):  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Ceramic Target

The role of the nitrogen flow rate on the transport properties of CrN thin films produced by DC magnetron sputtering

2018 ◽  
Vol 334 ◽  
pp. 98-104 ◽  
Author(s):  
A. Garzon-Fontecha ◽  
H.A. Castillo ◽  
E. Restrepo-Parra ◽  
W. De La Cruz
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Transport Properties ◽  
Flow Rate ◽  
Nitrogen Flow ◽  
Dc Magnetron Sputtering ◽  
Nitrogen Flow Rate
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