Vacuum‐deposited thin films studied by Auger spectroscopy

1979 ◽  
Vol 16 (4) ◽  
pp. 1004-1006
Author(s):  
G. Luzzi ◽  
L. Papagno
1987 ◽  
Vol 2 (1) ◽  
pp. 35-45 ◽  
Author(s):  
C. W. Draper ◽  
J. P. Franey ◽  
J. M. Gibson ◽  
T. E. Graedel ◽  
D. C. Jacobson ◽  
...  

Deposited thin films of Cr and Ni on Cu substrates have been melted and intermixed with a frequency-doubled Q-switched Nd:YAG laser. The laser pulses melt the thin films and a shallow portion of the substrate. Resolidification interface volocities are on the order of 1–10 m s−1. Rutherford backscattering, Auger spectroscopy, and energy dispersive x-ray mapping have been used to characterize the elemental distribution. Channeling and transmission electron microscopy were used to investigate the microstructure of the surfaces produced. In contrast to the binary Cr–Cu system, where extended solid solutions are produced, the Cr–Ni–Cu system results in a metallic glass surface. We have found that these metallic glass surfaces, which have been dubbed “stainless coppers,” exhibit excellent hydrogen sulfide corrosion resistance. Their contact resistance is low and stable over long periods of time and through tens of thousands of electronic dial switching cycles.


1992 ◽  
Vol 280 ◽  
Author(s):  
Bruce Andrien ◽  
David Miller

ABSTRACTA comparison between the morphology and magnetic properties has been made with thin films of Fe grown on GaAs(lOO) and of Ni grown on natural mica in the 10Å to 1000Å thickness range, in ultra high vacuum. The films are characterized in-situ by Auger spectroscopy and by an in-situ UHV M/H hysteresis loop tracer. If the films are thermally annealed, above 550°C for less than a few seconds, the film morphology changes. The Fe films form surface assembled clusters which are epitaxial with the GaAs substrate with diameters of order of the original average film thickness, while the Ni films grow large grains. The Auger signals show that the Fe clustering exposes the GaAs substrate while the Ni films are continuous and cover the mica substrate. In-situ adsorption studies of CO on the Ni films were consistent with the continuous nature of the Ni films. Hysteresis M/H curves are taken as a function of thickness and plots of coercivity versus film thickness or average cluster size shows a maximum near 100Å for both the Ni and the Fe films. The maximum is believed to be due to a trade-off between super-paramagnetism and magnetostatic forces, but with the grains in the Ni film playing the role of the clusters in the Fe film.


2017 ◽  
Vol 8 ◽  
pp. 539-546
Author(s):  
Massimiliano Lucci ◽  
Ivano Ottaviani ◽  
Matteo Cirillo ◽  
Fabio De Matteis ◽  
Roberto Francini ◽  
...  

We studied the growth and oxidation of niobium nitride (NbN) films that we used to fabricate superconductive tunnel junctions. The thin films were deposited by dc reactive magnetron sputtering using a mixture of argon and nitrogen. The process parameters were optimized by monitoring the plasma with an optical spectroscopy technique. This technique allowed us to obtain NbN as well as good quality AlN films and both were used to obtain NbN/AlN/NbN trilayers. Lift-off lithography and selective anodization of the NbN films were used, respectively, to define the main trilayer geometry and/or to separate electrically, different areas of the trilayers. The anodized films were characterized by using Auger spectroscopy to analyze compounds formed on the surface and by means of a nano-indenter in order to investigate its mechanical and adhesion properties. The transport properties of NbN/AlN/NbN Josephson junctions obtained as a result of the above described fabrication process were measured in liquid helium at 4.2 K.


1990 ◽  
Vol 8 (3) ◽  
pp. 2241-2245 ◽  
Author(s):  
Y. X. Wang ◽  
Y. D. Cui ◽  
Z. G. Chen ◽  
Eric Lambers ◽  
Paul H. Holloway

1992 ◽  
Vol 59 (3-4) ◽  
pp. 289-297 ◽  
Author(s):  
J.L. Leclercq ◽  
J. Durand ◽  
L. Cot ◽  
R. Berjoan ◽  
C. Dupuy

1978 ◽  
Vol 51 (1) ◽  
pp. L5-L8 ◽  
Author(s):  
G. Della Mea ◽  
P. Baeri ◽  
S.U. Campisano ◽  
M. Cocito

1993 ◽  
Vol 335 ◽  
Author(s):  
S. R. Gilbert ◽  
B. W. Wessels ◽  
D. A. Neumayer ◽  
T. J. Marks ◽  
J. L. Schindler ◽  
...  

AbstractBa1−xSrxTiO3 thin films were deposited over the entire solid solution range by low pressure metal-organic chemical vapor deposition. The metal-organic precursors employed were titanium tetraisopropoxide and barium and strontium(hexafl uoroacetylacetonate)2·tetraglyme. The substrates used were LaAlO3 and (100) p-type Si. Ba1−xSrxTiO3 films deposited on LaAlO3 were epitaxial, while the films deposited on Si showed no texture. Auger spectroscopy indicated that single phase Ba1−xSrxTiO3 films did not contain detectable levels of fluorine contamination. The dielectric constant was found to depend upon the solid solution composition x, and values as large as 220 measured at a frequency of 1 MHz were obtained. The resistivities of the as-deposited films ranged from 103 to 108 Ω-cm. Temperature dependent resistivity measurements indicated the films were slightly oxygen deficient.


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