Selective area chemical vapor deposition of titanium oxide films: Characterization of Ti(OC[sub 3]H[sub 7])[sub 4] as an electron beam resist

1999 ◽  
Vol 17 (4) ◽  
pp. 1622 ◽  
Author(s):  
William J. Mitchell ◽  
Evelyn L. Hu
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Titanium Oxide ◽  
Vapor Deposition ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Selective Area ◽  
Titanium Oxide Films

Deposition of Titanium Oxide Films from Metal-Organic Precursor by Electron Cyclotron Resonance Plasma-Assisted Chemical Vapor Deposition

1993 ◽  
Vol 335 ◽  
Author(s):  
Atsushi Nagahori ◽  
Rishi Raj
Keyword(s):  
Chemical Vapor Deposition ◽  
Titanium Oxide ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Electron Cyclotron ◽  
Titanium Oxide Films ◽  
Resonance Plasma

AbstractTitanium oxide thin films were deposited at room temperature by the Electron Cyclotron Resonance Plasma-Assisted Chemical Vapor Deposition (ECR-PACVD) method. Effects of deposition temperature, microwave power and plasma gas pressure were investigated. Both Ar and O2 plasma were used to deposit films from titanium isopropoxide (Ti(OC3H7)4) precursor. Transparent titanium oxide films were obtained with O2 plasma. Refractive index and thickness were measured by ellipsometry and the films were characterized by x-ray diffraction.

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