Structure and Properties of Silicon Titanium Oxide Films Prepared by Plasma-Enhanced Chemical Vapor Deposition Method

1991 ◽  
Vol 30 (Part 1, No. 12B) ◽  
pp. 3594-3596 ◽  
Author(s):  
Takeshi Kamada ◽  
Masatoshi Kitagawa ◽  
Munehiro Shibuya ◽  
Takashi Hirao
Keyword(s):  
Chemical Vapor Deposition ◽  
Titanium Oxide ◽  
Vapor Deposition ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Structure And Properties ◽  
Titanium Oxide Films

Deposition of Titanium Oxide Films from Metal-Organic Precursor by Electron Cyclotron Resonance Plasma-Assisted Chemical Vapor Deposition

1993 ◽  
Vol 335 ◽  
Author(s):  
Atsushi Nagahori ◽  
Rishi Raj
Keyword(s):  
Chemical Vapor Deposition ◽  
Titanium Oxide ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Electron Cyclotron ◽  
Titanium Oxide Films ◽  
Resonance Plasma

AbstractTitanium oxide thin films were deposited at room temperature by the Electron Cyclotron Resonance Plasma-Assisted Chemical Vapor Deposition (ECR-PACVD) method. Effects of deposition temperature, microwave power and plasma gas pressure were investigated. Both Ar and O2 plasma were used to deposit films from titanium isopropoxide (Ti(OC3H7)4) precursor. Transparent titanium oxide films were obtained with O2 plasma. Refractive index and thickness were measured by ellipsometry and the films were characterized by x-ray diffraction.

Sign in / Sign up

Export Citation Format

Share Document