Preferential sputtering of metal oxide mixture thin films

2021 ◽  
Vol 39 (2) ◽  
pp. 023406
Author(s):  
Mathias Mende ◽  
Florian Carstens ◽  
Henrik Ehlers ◽  
Detlev Ristau
Keyword(s):  
Thin Films ◽  
Metal Oxide ◽  
Oxide Mixture ◽  
Preferential Sputtering

Effects of crystalline structure of IGZO thin films on the electrical and photo-stability of metal-oxide thin-film transistors

2021 ◽  
Vol 139 ◽  
pp. 111252
Author(s):  
Youngjin Kang ◽  
Woobin Lee ◽  
Jaeyoung Kim ◽  
Kyobin Keum ◽  
Seung-Han Kang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Metal Oxide ◽  
Crystalline Structure ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film ◽  
Photo Stability

scholarly journals Nano Fabrication of Functional Transition Metal Oxide Thin Films

2008 ◽  
Vol 51 (1) ◽  
pp. 37-43
Author(s):  
Naoki SUZUKI ◽  
Hidekazu TANAKA ◽  
Yoshihiko YANAGISAWA ◽  
Satoru YAMANAKA ◽  
Luca PELLEGRINO ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Metal Oxide ◽  
Transition Metal Oxide ◽  
Oxide Thin Films ◽  
Metal Oxide Thin Films ◽  
Nano Fabrication ◽  
Functional Transition

scholarly journals STRUCTURAL AND ELECTRICAL PROPERTIES OF TANTALUM PENTAOXIDE (Ta2O5) THIN FILMS – A REVIEW

2013 ◽  
Vol 22 ◽  
pp. 564-569
Author(s):  
KANTA RATHEE ◽  
B. P. MALIK
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Metal Oxide ◽  
High Dielectric Constant ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Structural And Electrical Properties ◽  
High Dielectric ◽  
Deposited Films

Down scaling of complementary metal oxide semiconductor transistors has put limitations on silicon dioxide to be used as an effective dielectric. It is necessary to replace the SiO 2 with a physically thicker layer of oxides of high dielectric constant. Thus high k dielectrics are used to suppress the existing challenges for CMOS scaling. Many new oxides are being evaluated as gate dielectrics such as Ta2O5 , HfO2 , ZrO2 , La2O3 , HfO2 , TiO2 , Al2O3 , Y2O3 etc but it was soon found that these oxides in many respects have inferior electronic properties to SiO2 . But the the choice alone of suitable metal oxide with high dielectric constant is not sufficient to overcome the scaling challenges. The various deposition techniques and the conditions under which the thin films are deposited plays important role in deciding the structural and electrical properties of the deposited films. This paper discusses in brief the various deposition conditions which are employed to improve the structural and electrical properties of the deposited films.

scholarly journals Binary Metal Oxides Thin Films Prepared from Pulsed Laser Deposition

2021 ◽  
Author(s):  
Cyril Robinson Azariah John Chelliah ◽  
Rajesh Swaminathan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Metal Oxide ◽  
Metal Oxides ◽  
Pulsed Laser ◽  
Primary Objective ◽  
Binary Oxides ◽  
Binary Metal ◽  
Metal Oxide Nanostructures ◽  
Binary Metal Oxide

The semiconductor industry flourished from a simple Si-based metal oxide semiconductor field effect transistor to an era of MOSFET-based smart materials. In recent decades, researchers have been replacing all the materials required for the MOSFET device. They replaced the substrate with durable materials, lightweight materials, translucent materials and so on. They have came up with the possibility of replacing dielectric silicon dioxide material with high-grade dielectric materials. Even then the channel shift in the MOSFET was the new trend in MOSFET science. From the bulk to the atomic level, transistors have been curiously researched across the globe for the use of electronic devices. This research was also inspired by the different semiconductor materials relevant to the replacement of the dielectric channel/gate. Study focuses on diverse materials such as zinc oxides (ZnO), electrochromic oxides such as molybdenum oxides (including MoO3 and MoO2) and other binary oxides using ZnO and MoO3. The primary objective of this research is to study pulsed laser deposited thin films such as ZnO, MoO3, binary oxides such as binary ZnO /MoO3, ZnO /TiO2 and ZnO/V2O5 and to analyse their IV properties for FET applications. To achieve the goal, the following working elements have been set: investigation of pulsed laser deposited thin film of metal oxides and thin film of binary metal oxide nanostructures with effects of laser repetition and deposition temperatures.

scholarly journals Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors

2012 ◽  
Vol 112 (12) ◽  
pp. 124511 ◽  
Author(s):  
Jiwon Chang ◽  
Leonard F. Register ◽  
Sanjay K. Banerjee
Keyword(s):  
Thin Films ◽  
Metal Oxide ◽  
Topological Insulator ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

In situ stress measurements of metal oxide thin films

2018 ◽  
pp. 109-132 ◽  
Author(s):  
A. Fluri ◽  
C.W. Schneider ◽  
D. Pergolesi
Keyword(s):  
Thin Films ◽  
Metal Oxide ◽  
In Situ Stress ◽  
Oxide Thin Films ◽  
Metal Oxide Thin Films ◽  
Stress Measurements ◽  
In Situ Stress Measurements
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