Promotion of neural sprouting using low-level green light-emitting diode phototherapy

Abstract Spin-states and charge-trappings in blue organic light-emitting diodes (OLEDs) are important issues for developing high-device-performance application such as full-color displays and white illumination. However, they have not yet been completely clarified because of the lack of a study from a microscopic viewpoint. Here, we report operando electron spin resonance (ESR) spectroscopy to investigate the spin-states and charge-trappings in organic semiconductor materials used for blue OLEDs such as a blue light-emitting material 1-bis(2-naphthyl)anthracene (ADN) using metal–insulator–semiconductor (MIS) diodes, hole or electron only devices, and blue OLEDs from the microscopic viewpoint. We have clarified spin-states of electrically accumulated holes and electrons and their charge-trappings in the MIS diodes at the molecular level by directly observing their electrically-induced ESR signals; the spin-states are well reproduced by density functional theory. In contrast to a green light-emitting material, the ADN radical anions largely accumulate in the film, which will cause the large degradation of the molecule and devices. The result will give deeper understanding of blue OLEDs and be useful for developing high-performance and durable devices.

Download Full-text

Green Light Emitting Diode Irradiation Enhances Fibroblast Growth Impaired by High Glucose Level

Photomedicine and Laser Surgery ◽

10.1089/pho.2005.23.167 ◽

2005 ◽

Vol 23 (2) ◽

pp. 167-171 ◽

Cited By ~ 53

Author(s):

Elke M. Vinck ◽

Barbara J. Cagnie ◽

Maria J. Cornelissen ◽

Heidi A. Declercq ◽

Dirk C. Cambier

Keyword(s):

Glucose Level ◽

High Glucose ◽

Light Emitting Diode ◽

Green Light ◽

Fibroblast Growth ◽

Light Emitting ◽

High Glucose Level

Download Full-text

Optical properties of Ga0.82In0.18N p-n homojunction blue-green light-emitting-diode grown by radio-frequency plasma-assisted molecular beam epitaxy

Transactions of the Materials Research Society of Japan ◽

10.14723/tmrsj.40.149 ◽

2015 ◽

Vol 40 (2) ◽

pp. 149-152

Author(s):

Takeyoshi Onuma ◽

Kento Narutani ◽

Shuhei Fujioka ◽

Tomohiro Yamaguchi ◽

Ke Wang ◽

...

Keyword(s):

Optical Properties ◽

Molecular Beam Epitaxy ◽

Radio Frequency ◽

Molecular Beam ◽

Light Emitting Diode ◽

Green Light ◽

Radio Frequency Plasma ◽

Light Emitting ◽

Frequency Plasma

Download Full-text

The effect of light-emitting diode (590/830 nm)−based low-level laser therapy on posttraumatic edema of facial bone fracture patients

Journal of Cranio-Maxillofacial Surgery ◽

10.1016/j.jcms.2017.08.027 ◽

2017 ◽

Vol 45 (11) ◽

pp. 1875-1877 ◽

Cited By ~ 2

Author(s):

Woo Yeol Baek ◽

Il Hwan Byun ◽

In Sik Yun ◽

Jae Yoon Kim ◽

Tai Suk Roh ◽

...

Keyword(s):

Laser Therapy ◽

Bone Fracture ◽

Light Emitting Diode ◽

Low Level Laser Therapy ◽

Facial Bone ◽

Light Emitting ◽

Low Level ◽

Low Level Laser ◽

Level Laser ◽

Effect Of Light

Download Full-text

A 3 W High-Voltage Single-Chip Green Light-Emitting Diode with Multiple-Cells Network

Journal of Nanomaterials ◽

10.1155/2015/248191 ◽

2015 ◽

Vol 2015 ◽

pp. 1-4 ◽

Cited By ~ 1

Author(s):

W. Wang ◽

Y. Cai ◽

Y. B. Zhang ◽

H. J. Huang ◽

W. Huang ◽

...

Keyword(s):

High Voltage ◽

Light Emitting Diode ◽

Light Output ◽

Green Light ◽

Current Crowding ◽

Single Chip ◽

Light Output Power ◽

Large Area ◽

Light Emitting ◽

Multiple Cells

A parallel and series network structure was introduced into the design of the high-voltage single-chip (HV-SC) light-emitting diode to inhibit the effect of current crowding and to improve the yield. Using such a design, a6.6×5 mm2large area LED chip of 24 parallel stages was demonstrated with 3 W light output power (LOP) at the current of 500 mA. The forward voltage was measured to be 83 V with the same current injection, corresponding to 3.5 V for a single stage. The LED chip’s average thermal resistance was identified to be 0.28 K/W by using infrared thermography analysis.

Download Full-text