Switchable thin-film filters enabled by the phase transition of vanadium dioxide

Author(s):  
Chenghao Wan ◽  
David Woolf ◽  
Colin M. Hessel ◽  
Jad Salman ◽  
Yuzhe Xiao ◽  
...  

1999 ◽  
Vol 86 (9) ◽  
pp. 5311-5313 ◽  
Author(s):  
Z. P. Wu ◽  
A. Miyashita ◽  
S. Yamamoto ◽  
H. Abe ◽  
I. Nashiyama ◽  
...  


2008 ◽  
Vol 20 (46) ◽  
pp. 465204 ◽  
Author(s):  
Dmitry Ruzmetov ◽  
Kevin T Zawilski ◽  
Sanjaya D Senanayake ◽  
Venkatesh Narayanamurti ◽  
Shriram Ramanathan


2011 ◽  
Vol 519 (13) ◽  
pp. 4246-4248 ◽  
Author(s):  
Zhangli Huang ◽  
Sihai Chen ◽  
Boqing Wang ◽  
Ying Huang ◽  
Nengfu Liu ◽  
...  


2012 ◽  
Vol 27 (8) ◽  
pp. 891-896 ◽  
Author(s):  
Mao MAO ◽  
Wan-Xia HUANG ◽  
Ya-Xin ZHANG ◽  
Jia-Zhen YAN ◽  
Yi LUO ◽  
...  


2006 ◽  
Vol 966 ◽  
Author(s):  
Ramesh G. Mani ◽  
S. Ramanathan ◽  
V. Narayanamurti

ABSTRACTThe VO2 phase of vanadium oxide is known to exhibit large changes in the electrical and optical properties in the vicinity of the structural phase transition at 68C. Here, we report on the fabrication and study of thin film vanadium oxide (VO2) devices deposited on R-plane sapphire. Thin films prepared by electron beam evaporation have been processed by photolithography into two-terminal strips for electrical measurements. Measurements on such specimens exhibit reproducibility across a chip, in addition to hysteretic transport, and a one-to-two orders of magnitude change in the resistance in the vicinity of the structural transition. In sum, these experiments show that e-beam evaporation of VO2 constitutes a simple and useful approach to realizing devices from this technologically important material.



1995 ◽  
Vol 396 ◽  
Author(s):  
L. A. Gea ◽  
L. A. Boatner ◽  
J. D. Budai ◽  
R. A. Zuhr

AbstractIn this work, we report the formation of a new type of active or “smart” surface that is produced by ion implantation and thermal processing. By co-implanting vanadium and oxygen into a single-crystal sapphire substrate and annealing the system under appropriate conditions, it was possible to form buried precipitates of vanadium dioxide that were crystallographically oriented with respect to the host AI2O3 lattice. The implanted VO2 precipitate system undergoes a structural phase transition that is accompanied by large variations in the optical transmission which are comparable to those observed for thin films of VO2 deposited on sapphire. Co-implantation with oxygen was found to be necessary to ensure good optical switching behavior.







2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Run Shi ◽  
Yong Chen ◽  
Xiangbin Cai ◽  
Qing Lian ◽  
Zhuoqiong Zhang ◽  
...  

AbstractA systematic study of various metal-insulator transition (MIT) associated phases of VO2, including metallic R phase and insulating phases (T, M1, M2), is required to uncover the physics of MIT and trigger their promising applications. Here, through an oxide inhibitor-assisted stoichiometry engineering, we show that all the insulating phases can be selectively stabilized in single-crystalline VO2 beams at room temperature. The stoichiometry engineering strategy also provides precise spatial control of the phase configurations in as-grown VO2 beams at the submicron-scale, introducing a fresh concept of phase transition route devices. For instance, the combination of different phase transition routes at the two sides of VO2 beams gives birth to a family of single-crystalline VO2 actuators with highly improved performance and functional diversity. This work provides a substantial understanding of the stoichiometry-temperature phase diagram and a stoichiometry engineering strategy for the effective phase management of VO2.





Sign in / Sign up

Export Citation Format

Share Document