Material removal mechanism of single crystal silicon by bonnet polishing

2021 ◽  
Author(s):  
Bo Zhong ◽  
Nan ZHENG ◽  
Jie Li ◽  
Xian-hua CHEN
Keyword(s):  
Single Crystal ◽  
Material Removal ◽  
Single Crystal Silicon ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Crystal Silicon ◽  
Bonnet Polishing

Fundamental study on material removal mechanism in single-crystal germanium

2021 ◽  
pp. 103773
Author(s):  
Ruiwen Geng ◽  
Xiaojing Yang ◽  
Qiming Xie ◽  
Jianguo Xiao ◽  
Wanqing Zhang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Material Removal ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Fundamental Study

Experimental Investigation on Brittle-Ductile Transition in Electroplated Diamond Wire Saw Machining Single Crystal Silicon

2010 ◽  
Vol 431-432 ◽  
pp. 265-268 ◽  
Author(s):  
Yu Fei Gao ◽  
Pei Qi Ge
Keyword(s):  
Single Crystal ◽  
Material Removal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Diamond Wire ◽  
Brittle Ductile Transition ◽  
Wire Saw ◽  
Diamond Wire Saw ◽  
R Value ◽  
Material Removal Mode

Based on reciprocating electroplated diamond wire saw (REDWS) slicing experiments, a study on REDWS machining brittle-ductile transition of single crystal silicon was introduced. The machined surfaces and chips were observed by using Scanning Electron Microscope (SEM), and some experimental evidences of the change of material removal mode had been obtained. The experimental results indicate there is a close relationship between material removal mode and the ratio r value of ingot feed speed and wire speed, through controlling and adjusting the r value, the material removal mode can be complete brittle, partial ductile and near-ductile removal.

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