Hierarchical model for MEMS device performance simulation

Author(s):  
Kee Park ◽  
Kishore Pochiraju
Author(s):  
Erika Schutte ◽  
Jack Martin

Abstract An ellipsometry based measurement protocol was developed to evaluate changes to MEMS sensor surfaces which may occur during packaging using unpatterned test samples. This package-level technique has been used to measure the 0-20 Angstrom thin films that can form or deposit on die during the packaging process for a variety of packaging processing conditions. Correlations with device performance shows this to be a useful tool for packaged MEMS device and process characterization.


2002 ◽  
Vol 741 ◽  
Author(s):  
Clark L. Allred ◽  
Jeffrey T. Borenstein ◽  
Marc S. Weinberg ◽  
Xianglong Yuan ◽  
Martin Z. Bazant ◽  
...  

ABSTRACTAs MEMS devices become ever more sensitive, even slight shifts in materials properties can be detrimental to device performance. Radiation-induced defects can change both the dimensions and mechanical properties of MEMS materials, which will be of concern to designers of MEMS for applications involving radiation exposure, such as those in a reactor environment or in space. We have performed atomistic simulations of the effect that defects and amorphous regions, such as could be produced by radiation damage, have on the elastic constants of silicon. We have then applied the results of the elastic constant shift calculations to a hypothetical MEMS device, and calculated the difference that would be generated by this effect.


Author(s):  
Marylyn Bennett-Lilley ◽  
Thomas T.H. Fu ◽  
David D. Yin ◽  
R. Allen Bowling

Chemical Vapor Deposition (CVD) tungsten metallization is used to increase VLSI device performance due to its low resistivity, and improved reliability over other metallization schemes. Because of its conformal nature as a blanket film, CVD-W has been adapted to multiple levels of metal which increases circuit density. It has been used to fabricate 16 MBIT DRAM technology in a manufacturing environment, and is the metallization for 64 MBIT DRAM technology currently under development. In this work, we investigate some sources of contamination. One possible source of contamination is impurities in the feed tungsten hexafluoride (WF6) gas. Another is particle generation from the various reactor components. Another generation source is homogeneous particle generation of particles from the WF6 gas itself. The purpose of this work is to investigate and analyze CVD-W process-generated particles, and establish a particle characterization methodology.


Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.


Author(s):  
T.C. Sheu ◽  
S. Myhajlenko ◽  
D. Davito ◽  
J.L. Edwards ◽  
R. Roedel ◽  
...  

Liquid encapsulated Czochralski (LEC) semi-insulating (SI) GaAs has applications in integrated optics and integrated circuits. Yield and device performance is dependent on the homogeniety of the wafers. Therefore, it is important to characterise the uniformity of the GaAs substrates. In this respect, cathodoluminescence (CL) has been used to detect the presence of crystal defects and growth striations. However, when SI GaAs is examined in a scanning electron microscope (SEM), there will be a tendency for the surface to charge up. The surface charging affects the backscattered and secondary electron (SE) yield. Local variations in the surface charge will give rise to contrast (effectively voltage contrast) in the SE image. This may be associated with non-uniformities in the spatial distribution of resistivity. Wakefield et al have made use of “charging microscopy” to reveal resistivity variations across a SI GaAs wafer. In this work we report on CL imaging, the conditions used to obtain “charged” SE images and some aspects of the contrast behaviour.


2002 ◽  
Vol 18 (1) ◽  
pp. 78-84 ◽  
Author(s):  
Eva Ullstadius ◽  
Jan-Eric Gustafsson ◽  
Berit Carlstedt

Summary: Vocabulary tests, part of most test batteries of general intellectual ability, measure both verbal and general ability. Newly developed techniques for confirmatory factor analysis of dichotomous variables make it possible to analyze the influence of different abilities on the performance on each item. In the testing procedure of the Computerized Swedish Enlistment test battery, eight different subtests of a new vocabulary test were given randomly to subsamples of a representative sample of 18-year-old male conscripts (N = 9001). Three central dimensions of a hierarchical model of intellectual abilities, general (G), verbal (Gc'), and spatial ability (Gv') were estimated under different assumptions of the nature of the data. In addition to an ordinary analysis of covariance matrices, assuming linearity of relations, the item variables were treated as categorical variables in the Mplus program. All eight subtests fit the hierarchical model, and the items were found to load about equally on G and Gc'. The results also indicate that if nonlinearity is not taken into account, the G loadings for the easy items are underestimated. These items, moreover, appear to be better measures of G than the difficult ones. The practical utility of the outcome for item selection and the theoretical implications for the question of the origin of verbal ability are discussed.


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