Defect-Induced Shifts in the Elastic Constants of Silicon

ABSTRACTAs MEMS devices become ever more sensitive, even slight shifts in materials properties can be detrimental to device performance. Radiation-induced defects can change both the dimensions and mechanical properties of MEMS materials, which will be of concern to designers of MEMS for applications involving radiation exposure, such as those in a reactor environment or in space. We have performed atomistic simulations of the effect that defects and amorphous regions, such as could be produced by radiation damage, have on the elastic constants of silicon. We have then applied the results of the elastic constant shift calculations to a hypothetical MEMS device, and calculated the difference that would be generated by this effect.

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1005 Atomistic simulations of effect of radiation-induced defects on mechanical properties

The Proceedings of The Computational Mechanics Conference ◽

10.1299/jsmecmd.2010.23.506 ◽

2010 ◽

Vol 2010.23 (0) ◽

pp. 506-507

Author(s):

Tomohito TSURU ◽

Yoshiyuki KAJI

Keyword(s):

Mechanical Properties ◽

Atomistic Simulations ◽

Radiation Induced ◽

Induced Defects

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Effects of radiation-induced defects on device performance in electron-irradiated SiC-MESFETs

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2006.01.028 ◽

2006 ◽

Vol 9 (1-3) ◽

pp. 327-330

Author(s):

K. Takakura ◽

H. Ohyama ◽

K. Uemura ◽

M. Arai ◽

S. Kuboyama ◽

...

Keyword(s):

Device Performance ◽

Radiation Induced ◽

Effects Of Radiation ◽

Induced Defects

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Xenon ion irradiation of superconducting YBa2Cu3O7 thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100173595 ◽

1990 ◽

Vol 48 (4) ◽

pp. 92-93

Author(s):

H. Watanabe ◽

B. Kabius ◽

B. Roas ◽

K. Urban

Keyword(s):

Defect Formation ◽

Ion Irradiation ◽

High Resolution Electron Microscopy ◽

Structural Disorder ◽

Flux Lines ◽

Pinning Effect ◽

Magnetic Flux Lines ◽

Resolution Electron ◽

Radiation Induced ◽

Induced Defects

Recently it was reported that the critical current density(Jc) of YBa2Cu2O7, in the presence of magnetic field, is enhanced by ion irradiation. The enhancement is thought to be due to the pinning of the magnetic flux lines by radiation-induced defects or by structural disorder. The aim of the present study was to understand the fundamental mechanisms of the defect formation in association with the pinning effect in YBa2Cu3O7 by means of high-resolution electron microscopy(HRTEM).The YBa2Cu3O7 specimens were prepared by laser ablation in an insitu process. During deposition, a substrate temperature and oxygen atmosphere were kept at about 1073 K and 0.4 mbar, respectively. In this way high quality epitaxially films can be obtained with the caxis parallel to the <100 > SrTiO3 substrate normal. The specimens were irradiated at a temperature of 77 K with 173 MeV Xe ions up to a dose of 3.0 × 1016 m−2.

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EXAFS STUDY ON RADIATION INDUCED DEFECTS

Le Journal de Physique Colloques ◽

10.1051/jphyscol:19868202 ◽

1986 ◽

Vol 47 (C8) ◽

pp. C8-1045-C8-1048

Author(s):

T. BOLZE ◽

J. PEISL

Keyword(s):

Radiation Induced ◽

Exafs Study ◽

Induced Defects

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Detecting the 10 Angstroms That Change MEMS Performance

ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2004p0232 ◽

2004 ◽

Author(s):

Erika Schutte ◽

Jack Martin

Keyword(s):

Thin Films ◽

Device Performance ◽

Processing Conditions ◽

Packaging Process ◽

Mems Sensor ◽

Process Characterization ◽

Measurement Protocol ◽

Mems Device

Abstract An ellipsometry based measurement protocol was developed to evaluate changes to MEMS sensor surfaces which may occur during packaging using unpatterned test samples. This package-level technique has been used to measure the 0-20 Angstrom thin films that can form or deposit on die during the packaging process for a variety of packaging processing conditions. Correlations with device performance shows this to be a useful tool for packaged MEMS device and process characterization.

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Generalization of intrinsic ductile-to-brittle criteria by Pugh and Pettifor for materials with a cubic crystal structure

Scientific Reports ◽

10.1038/s41598-021-83953-z ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

O. N. Senkov ◽

D. B. Miracle

Keyword(s):

Crystal Structure ◽

Shear Modulus ◽

Bulk Modulus ◽

Single Crystal ◽

Elastic Constants ◽

Mechanical Analysis ◽

Quantum Mechanical ◽

Modulus Ratio ◽

Cubic Crystal ◽

The Difference

AbstractTwo classical criteria, by Pugh and Pettifor, have been widely used by metallurgists to predict whether a material will be brittle or ductile. A phenomenological correlation by Pugh between metal brittleness and its shear modulus to bulk modulus ratio was established more than 60 years ago. Nearly four decades later Pettifor conducted a quantum mechanical analysis of bond hybridization in a series of intermetallics and derived a separate ductility criterion based on the difference between two single-crystal elastic constants, C12–C44. In this paper, we discover the link between these two criteria and show that they are identical for materials with cubic crystal structures.

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