Evaluation of spatial resolution in laser-terahertz emission microscope for inspecting electrical faults in integrated circuits

AbstractThermoreflectance is an non contact optical method using the local reflectivity variations induced by heating to infer temperature mappings, and can be conducted at virtually any wavelength. In the visible, the technique is now well established. It can probe temperatures through several micrometers of transparent encapsulation layers, with sub-micron spatial resolution and 100 mK thermal resolution. In the ultraviolet range, dielectric encapsulation layers are opaque and thermoreflectance gives access to the surface temperature. In the near infrared, thermoreflectance is an interesting solution to examine chips turned upside down, since these wavelengths can penetrate through silicon substrates and give access to the temperature of the active layers themselves. Here, we explore the possibilities of each wavelength range and detail the CCD-based thermal imaging tools dedicated to the high resolution inspection of integrated circuits.

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High-spatial-resolution x-ray microanalysis of Al-2wt.% Cu aluminum thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100153051 ◽

1989 ◽

Vol 47 ◽

pp. 216-217

Author(s):

A. D. Romig ◽

D. R. Frear ◽

T. J. Headley

Keyword(s):

Integrated Circuits ◽

Grain Boundary ◽

Spatial Resolution ◽

High Spatial Resolution ◽

Copper Alloys ◽

X Ray ◽

Cu Films ◽

Grain Boundary Transport ◽

Film Form ◽

Si Wafer

Aluminum - 2 wt.% copper alloys are commonly used in thin film form as interconnect metallization lines for integrated circuits. Experience has shown that the addition of the Cu to the Al, albeit at a decrease in conductivity, makes the metallizations more resistant to failure by electromigration. However, the mechanism by which Cu increases the resistance to electromigration has never been positively identified. One theory proposes that Cu coats the Al grain boundaries (boundaries are enriched in Cu) and retards grain boundary diffusion thereby reducing electromigration. Another theory suggests that a continuous thin layer of CuAl2 forms along the boundaries also reducing grain boundary transport and therefore the tendency to electromigrate. Recently, Frear et al. have reported on a detailed set of experiments to examine these theories from a microstructural viewpoint. Here, the details of the high spatial resolution microanalysis done to support the study of Fear, et al. are reported.Al- 2wt.% Cu was magnetron sputtered onto a borosilicate glass (BSG) coated (100) Si wafer. The Al-Cu films were sputtered at room temperature from a single source under an argon atmosphere at a deposition rate of 100 nm/min. Films 400 and 800 nm thick were prepared. The films were annealed under a 15% hydrogen forming gas (reducing) at 425°C for 35 min.

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Contactless Voltage and Current Contrast Imaging with Scanning Force Microscope Based Test Systems

ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2000p0533 ◽

2000 ◽

Author(s):

W. Mertin ◽

S.-W. Bae ◽

U. Behnke ◽

R. Weber ◽

E. Kubalek

Keyword(s):

Integrated Circuits ◽

Spatial Resolution ◽

State Of The Art ◽

Scanning Force Microscopy ◽

Scanning Probe ◽

Contrast Imaging ◽

Scanning Force Microscope ◽

Force Microscopy ◽

Scanning Force ◽

Electric Signals

Abstract Significant improvements in the performance of modern integrated circuits (ICs) require also an increase of the performance of the used circuit internal test techniques regarding bandwidth, spatial resolution, and sensitivity. Due to its outstanding lateral and vertical spatial resolution in the nanometer regime scanning force microscopy (SFM) based on scanning probe microscopes is well suited for the investigation of very small structures. Furthermore it has been demonstrated that with SFM also electric signals can be contactless tested. This feature can be used for a circuit internal failure analysis of ICs. In this paper principles, examples, and the state-of-the-art of voltage and current measurement based on SFM will be presented.

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Backside observation of large-scale integrated circuits with multilayered interconnections using laser terahertz emission microscope

Applied Physics Letters ◽

10.1063/1.3133346 ◽

2009 ◽

Vol 94 (19) ◽

pp. 191104 ◽

Cited By ~ 18

Author(s):

Masatsugu Yamashita ◽

Chiko Otani ◽

Kodo Kawase ◽

Toru Matsumoto ◽

Kiyoshi Nikawa ◽

...

Keyword(s):

Integrated Circuits ◽

Large Scale ◽

Terahertz Emission

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Laser terahertz emission microscope for inspecting electrical failures in integrated circuits

International Meeting for Future of Electron Devices, 2004. ◽

10.1109/imfedk.2004.1566392 ◽

2006 ◽

Cited By ~ 2

Author(s):

M. Yamashita ◽

T. Kiwa ◽

M. Tonouchi ◽

K. Nikawa ◽

C. Otani ◽

...

Keyword(s):

Integrated Circuits ◽

Terahertz Emission

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Back side thermal imaging of integrated circuits at high spatial resolution

Applied Physics Letters ◽

10.1063/1.2732179 ◽

2007 ◽

Vol 90 (17) ◽

pp. 171112 ◽

Cited By ~ 43

Author(s):

G. Tessier ◽

M. Bardoux ◽

C. Boué ◽

C. Filloy ◽

D. Fournier

Keyword(s):

Integrated Circuits ◽

Spatial Resolution ◽

Thermal Imaging ◽

High Spatial Resolution ◽

Back Side

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New Developments in IR Lock-In Thermography

ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2004p0595 ◽

2004 ◽

Author(s):

O. Breitenstein ◽

J.P. Rakotoniaina ◽

M. Hejjo Al Rifai ◽

M. Gradhand ◽

F. Altmann ◽

...

Keyword(s):

Integrated Circuits ◽

Spatial Resolution ◽

Infrared Camera ◽

Detection Sensitivity ◽

New Developments ◽

Technical Developments ◽

Corrected Image ◽

Lock In ◽

Blurring Effect ◽

Colloidal Bismuth

Abstract Lock-in thermography based on an infrared camera has proven to be a useful tool for failure analysis of integrated circuits (ICs). This article discusses four novel technical developments of lock-in thermography. These developments are blackening the IC surface with colloidal bismuth, the synchronous undersampling technique allowing the use of higher lock-in frequencies, displaying the 0deg/-90deg signal as a novel high resolution emissivity corrected image type, and removing the thermal blurring effect by mathematically deconvoluting the 0deg/-90deg; signal. The effect of these techniques is demonstrated by using a regularly working operational amplifier (pA 741) and a damaged capacitor as test devices. It is shown that blackening the IC surface improves the detection sensitivity in metallized regions by up to a factor of 10, whereas the other methods allow improvement of the effective spatial resolution. The article also discusses which of the spatial resolution improvement techniques is most appropriate in different situations.

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