Electrical conductivity enhancement of indium tin oxide (ITO) thin films reactively sputtered in a hydrogen plasma

2020 ◽  
Vol 31 (4) ◽  
pp. 2729-2740 ◽  
Author(s):  
M. F. Al-Kuhaili
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Hydrogen Plasma ◽  
Conductivity Enhancement ◽  
Ito Thin Films

scholarly journals Different electrode anodes used in OLED devices Diferentes eletrodos anodos usados em dispositivos OLEDs

2021 ◽  
Author(s):  
Emerson Roberto Santos ◽  
Thiago de Carvalho Fullenbach ◽  
Marina Sparvoli Medeiros ◽  
Luis da Silva Zambom ◽  
Roberto Koji Onmori ◽  
...  
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Threshold Voltage ◽  
Indium Tin Oxide ◽  
Light Emitting Diode ◽  
Electrical Current ◽  
High Threshold ◽  
Diamond Coatings ◽  
Ito Thin Films ◽  
Order Of Magnitude

Transparent conductive oxides (TCOs) known as indium tin oxide (ITO) and fluorine tin oxide (FTO) deposited on glass were compared by different techniques and also as anodes in organic light-emitting diode (OLED) devices with same structure. ITO produced at laboratory was compared with the commercial one manufactured by different companies: Diamond Coatings, Displaytech and Sigma-Aldrich, and FTO produced at laboratory was compared with the commercial one manufactured by Flexitec Company. FTO thin films produced at laboratory presented the lowest performance measured by Hall effect technique and also by I-V curve of OLED device with low electrical current and high threshold voltage. ITO thin films produced at laboratory presented elevated sheet resistance in comparison with commercial ITOs (approximately one order of magnitude greater), that can be related by a high number of defects as discontinuity of the chemical lattice or low crystalline structure. In the assembly of OLED devices with ITO and FTO produced at laboratory, neither presented luminances. ITO manufactured by Sigma-Aldrich company presented better electrical and optical characteristics, as low electrical resistivity, good wettability, favorable transmittance, perfect physicalchemical stability and lowest threshold voltage (from 3 to 4.5 V) for OLED devices.

Effects of the Concentration of Indium-tin-oxide (ITO) Ink on the Characteristics of Directly-printed ITO Thin Films

2010 ◽  
Vol 57 (6(1)) ◽  
pp. 1794-1798 ◽  
Author(s):  
Jong-Woong Kim ◽  
Jangwoo Choi ◽  
Sung-Jei Hong ◽  
Jeong-In Han ◽  
Young-Sung Kim
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ito Thin Films

scholarly journals Highly conductive low-temperature combustion-derived transparent indium tin oxide thin film

2021 ◽  
Author(s):  
Longfei Song ◽  
Tony Schenk ◽  
Emmanuel Defay ◽  
Sebastjan Glinsek
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Film ◽  
Low Temperature Combustion ◽  
Transparent Electronics ◽  
Temperature Combustion ◽  
Ito Thin Films

Highly conductive (conductivity 620 S cm−1) and transparent ITO thin films are achieved at low temperature (350 °C) through effective combustion solution processing via multistep coating. The properties show potential for next generation flexible and transparent electronics.

scholarly journals Intrinsic and Extrinsic Ferromagnetism in Co-Doped Indium Tin Oxide Revealed Using X-Ray Magnetic Circular Dichroism

2017 ◽  
Vol 2017 ◽  
pp. 1-7 ◽  
Author(s):  
A. M. H. R. Hakimi ◽  
F. Schoofs ◽  
M. G. Blamire ◽  
S. Langridge ◽  
S. S. Dhesi
Keyword(s):  
Thin Films ◽  
Circular Dichroism ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Magnetic Circular Dichroism ◽  
Cluster Formation ◽  
X Ray ◽  
Ito Thin Films ◽  
Circular Dichroïsm ◽  
Co Doped

The effects of high-temperature annealing on ferromagnetic Co-doped Indium Tin Oxide (ITO) thin films have been investigated using X-ray diffraction (XRD), magnetometry, and X-Ray Magnetic Circular Dichroism (XMCD). Following annealing, the magnetometry results indicate the formation of Co clusters with a significant increase in the saturation magnetization of the thin films arising from defects introduced during cluster formation. However, sum rule analysis of the element-specific XMCD results shows that the magnetic moment at the Co sites is reduced after annealing. The effects of annealing demonstrate that the ferromagnetism observed in the as-deposited Co-doped ITO films arises from intrinsic defects and cannot be related to the segregation of metallic Co clusters.

Room-temperature preparation of biaxially textured indium tin oxide thin films with ion-beam-assisted deposition

2003 ◽  
Vol 18 (2) ◽  
pp. 442-447 ◽  
Author(s):  
Karola Thiele ◽  
Sibylle Sievers ◽  
Christian Jooss ◽  
Jörg Hoffmann ◽  
Herbert C. Freyhardt
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Film Growth ◽  
Texture Evolution ◽  
Ion Beam ◽  
High Temperature Superconductors ◽  
Buffer Layers ◽  
Ito Thin Films

Biaxially aligned indium tin oxide (ITO) thin films were prepared by an ion-beamassisted deposition (IBAD) process at room temperature. Films with a transmittance at 550 nm of 90% and an electrical resistivity of 1.1 × 10−3 Ωcm for 300 and 250 nm thickness were obtained. Investigations of the texture evolution during IBAD film growth were carried out and compared to the well-established texture development in yttria-stabilized zirconia. An in-plane texture of 12.6° full width at half-maximum (FWHM) for a 1-μm-thick IBAD-ITO film was achieved. The quality of these films as electrically conductive buffer layers for YBa2Cu3O7-δ (YBCO) high-temperature superconductors was demonstrated by the subsequent deposition of high-currentcarrying YBCO films by thermal co-evaporation using a 3–5-nm-thick Y2O3 interlayer.A Jc of 0.76 MA/cm2 (77K, 0 T) was obtained for a 1 × 1 cm sample with ITO of 20° FWHM.

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