Impact of gate line edge roughness on double-gate FinFET performance variability

2008 ◽  
Author(s):  
Kedar Patel ◽  
Tsu-Jae King Liu ◽  
Costas Spanos
Keyword(s):  
Double Gate ◽  
Line Edge Roughness ◽  
Performance Variability ◽  
Edge Roughness

Impact of Line-Edge Roughness on Double-Gate Schottky-Barrier Field-Effect Transistors

2009 ◽  
Vol 56 (6) ◽  
pp. 1211-1219 ◽  
Author(s):  
Shimeng Yu ◽  
Yuning Zhao ◽  
Lang Zeng ◽  
Gang Du ◽  
Jinfeng Kang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Line Edge Roughness ◽  
Edge Roughness

Variability Analysis of Graded Channel Dual Material-double Gate Strained-silicon MOSFET With fixed Charges

2021 ◽  
Author(s):  
Subba Rao Suddapalli ◽  
Bheema Rao Nistala
Keyword(s):  
Process Variations ◽  
Oxide Thickness ◽  
Strained Silicon ◽  
Double Gate ◽  
Line Edge Roughness ◽  
Oxide Interface ◽  
Variability Analysis ◽  
Fixed Charges ◽  
Edge Roughness ◽  
Dual Material

Abstract In this paper, variability analysis of graded channel dual material (GCDM) double gate (DG) strained-silicon (s-Si) MOSFET with fixed charges is analyzed with the help of Sentaurus TCAD. By varying the different device parameters, the variability analysis of the proposed GCDM-DG s-Si MOSFET is performed with respect to variations in threshold voltage and drain current as the line edge roughness and fluctuations in random dopant, contact resistance, and oxide thickness are considered. The results confirm that the effect of process variations is severe when the device has fixed charges at oxide interface. Moreover, the proposed GCDM-DG s-Si p-MOSFET has less vulnerable to the effects of line edge roughness, fluctuations in oxide thickness and random dopants in comparison with the proposed GCDM-DG s-Si n-MOSFET.

Variability Induced by Line Edge Roughness in Double-Gate Dopant-Segregated Schottky MOSFETs

2011 ◽  
Vol 10 (2) ◽  
pp. 244-249 ◽  
Author(s):  
Yunxiang Yang ◽  
Shimeng Yu ◽  
Lang Zeng ◽  
Gang Du ◽  
Jinfeng Kang ◽  
...  
Keyword(s):  
Double Gate ◽  
Line Edge Roughness ◽  
Edge Roughness

Gate Line Edge Roughness Model for Estimation of FinFET Performance Variability

2009 ◽  
Vol 56 (12) ◽  
pp. 3055-3063 ◽  
Author(s):  
Kedar Patel ◽  
Tsu-Jae King Liu ◽  
Costas J. Spanos
Keyword(s):  
Line Edge Roughness ◽  
Performance Variability ◽  
Roughness Model ◽  
Edge Roughness

Characterization of Line-Edge Roughness in Cu/Low-kInterconnect Pattern

2008 ◽  
Vol 47 (4) ◽  
pp. 2501-2505 ◽  
Author(s):  
Atsuko Yamaguchi ◽  
Daisuke Ryuzaki ◽  
Ken-ichi Takeda ◽  
Jiro Yamamoto ◽  
Hiroki Kawada ◽  
...  
Keyword(s):  
Line Edge Roughness ◽  
Edge Roughness

Fabrication of low line edge roughness mold by SOG replica method

2004 ◽  
Author(s):  
Y. Kurashima ◽  
H. Hiroshima ◽  
M. Komuro ◽  
N. Yamazaki ◽  
J. Taniguchi ◽  
...  
Keyword(s):  
Replica Method ◽  
Line Edge Roughness ◽  
Edge Roughness
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