Variability Analysis of Graded Channel Dual Material-double Gate Strained-silicon MOSFET With fixed Charges

2021 ◽  
Author(s):  
Subba Rao Suddapalli ◽  
Bheema Rao Nistala
Keyword(s):  
Process Variations ◽  
Oxide Thickness ◽  
Strained Silicon ◽  
Double Gate ◽  
Line Edge Roughness ◽  
Oxide Interface ◽  
Variability Analysis ◽  
Fixed Charges ◽  
Edge Roughness ◽  
Dual Material

Abstract In this paper, variability analysis of graded channel dual material (GCDM) double gate (DG) strained-silicon (s-Si) MOSFET with fixed charges is analyzed with the help of Sentaurus TCAD. By varying the different device parameters, the variability analysis of the proposed GCDM-DG s-Si MOSFET is performed with respect to variations in threshold voltage and drain current as the line edge roughness and fluctuations in random dopant, contact resistance, and oxide thickness are considered. The results confirm that the effect of process variations is severe when the device has fixed charges at oxide interface. Moreover, the proposed GCDM-DG s-Si p-MOSFET has less vulnerable to the effects of line edge roughness, fluctuations in oxide thickness and random dopants in comparison with the proposed GCDM-DG s-Si n-MOSFET.

scholarly journals Analog/RF Performance of Triple Material Gate Stack-Graded Channel Double Gate-Junctionless Strained-silicon MOSFET with Fixed Charges

Silicon ◽  
2021 ◽  
Author(s):  
Suddapalli Subba Rao ◽  
Rani Deepika Balavendran Joseph ◽  
Vijaya Durga Chintala ◽  
Gopi Krishna Saramekala ◽  
D. Srikar ◽  
...  
Keyword(s):  
Strained Silicon ◽  
Double Gate ◽  
Gate Stack ◽  
Fixed Charges ◽  
Rf Performance

Impact of Line-Edge Roughness on Double-Gate Schottky-Barrier Field-Effect Transistors

2009 ◽  
Vol 56 (6) ◽  
pp. 1211-1219 ◽  
Author(s):  
Shimeng Yu ◽  
Yuning Zhao ◽  
Lang Zeng ◽  
Gang Du ◽  
Jinfeng Kang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Line Edge Roughness ◽  
Edge Roughness

Variability Induced by Line Edge Roughness in Double-Gate Dopant-Segregated Schottky MOSFETs

2011 ◽  
Vol 10 (2) ◽  
pp. 244-249 ◽  
Author(s):  
Yunxiang Yang ◽  
Shimeng Yu ◽  
Lang Zeng ◽  
Gang Du ◽  
Jinfeng Kang ◽  
...  
Keyword(s):  
Double Gate ◽  
Line Edge Roughness ◽  
Edge Roughness

scholarly journals Analog/RF Performance of Triple Material Gate Stack-Graded Channel Double Gate-Junctionless Strained-silicon MOSFET with Fixed Charges

2021 ◽  
Author(s):  
Subba Rao Suddapalli ◽  
Rani Deepika Balavendran Joseph ◽  
Vijaya Durga Chintala ◽  
Gopi Krishna Saramekala ◽  
Srikar D ◽  
...  
Keyword(s):  
Current Gain ◽  
Strained Silicon ◽  
Threshold Region ◽  
Double Gate ◽  
Electrical Characteristics ◽  
Gate Stack ◽  
Fixed Charges ◽  
Strong Inversion ◽  
Rf Performance ◽  
Output Conductance

Abstract In this paper, analog/radio frequency (RF) electrical characteristics of triple material gate stack-graded channel double gate-Junctionless (TMGS-GCDG-JL) strained-silicon (s-Si) MOSFET with fixed charges is analyzed with the help of Sentaurus TCAD. By varying the various device parameters, the analog/RF performance of the proposed TMGS-GCDG-JL s-Si MOSFET is evaluated in terms of early voltage, transconductance generation factor (TGF), voltage gain, unity current gain frequency ( ft ), unity power gain frequency (fmax ), and gain transconductance frequency product (GTFP). The results confirm that the proposed TMGS-GCDG-JL s-Si MOSFET has superior analog/RF performance compared to the gate stack-graded channel double gate-junctionless (GS-GCDG-JL) s-Si MOSFET. However, the proposed device has less transconductance and less output conductance in comparison with the GS-GCDG-JL s-Si MOSFET in strong inversion region, and reverse trend follows in sub-threshold region.

An Analytical Drain Current Model for Dual-material Gate Graded - channel and Dual-oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET

2019 ◽  
Vol 9 (2) ◽  
pp. 291-297
Author(s):  
Hind Jaafar ◽  
Abdellah Aouaj ◽  
Ahmed Bouziane ◽  
Benjamin Iñiguez
Keyword(s):  
Current Model ◽  
Drain Current ◽  
Oxide Thickness ◽  
Subthreshold Current ◽  
The Poisson Equation ◽  
Strong Inversion ◽  
Cylindrical Form ◽  
Silvaco Atlas ◽  
Dual Material ◽  
Good Agreement

Background: A novel Dual Material Gate Graded Channel and Dual Oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET is presented in this paper. Methods: Analytical model of drain current is developed using a quasi-two-dimensional cylindrical form of the Poisson equation and is expressed as a function of the surface potential, which is calculated using the expressions of the current density. Results: Comparison of the analytical results with 3D numerical simulations using Silvaco Atlas - TCAD software presents a good agreement from subthreshold to strong inversion regime and for different bias voltages. Conclusion: Two oxide thicknesses with different permittivity can effectively improve the subthreshold current of DMG-GC-DOT MOSFET.

Influence of Localized Interface Charges on Drain Current of Dual-Material Double-Gate Tunnel FETs

2018 ◽  
Author(s):  
Sanjay Kumar ◽  
Kamlaksha Baral ◽  
Sweta Chander ◽  
P. K. Singh ◽  
Kunal Singh ◽  
...  
Keyword(s):  
Drain Current ◽  
Double Gate ◽  
Interface Charges ◽  
Tunnel Fets ◽  
Dual Material
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