Analysis of beam interference reflected from atomic force microscope tip and periodic silicon surface under various humidity conditions

2012 ◽  
Author(s):  
Hans P. Banerjee ◽  
Asanka T. Weerasinghe ◽  
Sergei F. Lyuksyutov
Keyword(s):  
Atomic Force Microscope ◽  
Silicon Surface ◽  
Atomic Force

Slip Length Measurement of Water Flow on Graphite Surface Using Atomic Force Microscope

2014 ◽  
Vol 941-944 ◽  
pp. 1581-1584 ◽  
Author(s):  
Da Yong Li ◽  
Da Lei Jing ◽  
Yun Lu Pan ◽  
Khurshid Ahmad ◽  
Xue Zeng Zhao
Keyword(s):  
Atomic Force Microscope ◽  
Water Flow ◽  
Drag Force ◽  
Silicon Surface ◽  
Slip Length ◽  
Graphite Surface ◽  
Length Measurement ◽  
Hydrodynamic Drag ◽  
Experimental Measurements ◽  
Atomic Force

In this paper, we present experimental measurements of slip length of deionized (DI) water flow on a silicon surface and a graphite surface by using atomic force microscope. The results show that the measured hydrodynamic drag force is higher on silicon surface than that on graphite surface, and a measured slip length about 10 nm is obtained on the later surface.

Effect of Solvent and Dopant on Poly(3,4-ethylenedioxythiophene) Thin Films by Atomic Force Microscope Lithography

2008 ◽  
Vol 8 (9) ◽  
pp. 4757-4760 ◽  
Author(s):  
Yong-il Kim ◽  
Hyunsook Kim ◽  
Haiwon Lee
Keyword(s):  
Thin Films ◽  
Conducting Polymers ◽  
Atomic Force Microscope ◽  
Organic Solvents ◽  
Silicon Surface ◽  
Silicon Oxide ◽  
Organic Thin Films ◽  
Effect Of Solvent ◽  
Aspect Ratios ◽  
Atomic Force

AMF anodization lithography was performed on organic thin films with conducting polymers which is poly(3,4-ethylenedioxythiophene). The conductivity of PEDOT thin films was changed by different dopants and organic solvents. Two different dopants are poly(4-styrenesulfonate) and di(2-ethylhexyl)-sulfosuccinate. Also, DMF and IPA were used to prepare the PEDOT thin films doped with PSS and DEHS on silicon surface. The conductivities of these PEDOT variants were compared by obtaining their I–V curves between tip and thin films using AFM. Silicon oxide nanopatterns with higher aspect ratios can be obtained from the films with higher conductivity.

Tilt of Atomic Force Microscope Cantilevers: Effect on Friction Measurements

2007 ◽  
Vol 353-358 ◽  
pp. 742-745
Author(s):  
Fei Wang ◽  
Xue Zeng Zhao
Keyword(s):  
Friction Coefficient ◽  
Atomic Force Microscope ◽  
Tilt Angle ◽  
Silicon Surface ◽  
Theoretical Study ◽  
Atomic Force ◽  
Afm Tips ◽  
Variation Range ◽  
Frictional Forces ◽  
Friction Measurements

The cantilevers of atomic force microscope (AFM) are mounted under a certain tilt angle, which is commonly assumed to have negligible effect on friction measurements in AFM. We present a theoretical study of the effect of the tilt angle on AFM based friction measurements. A method for correcting the friction coefficient between sample surfaces and AFM tips is also presented to minimize the effects of the tilt. The frictional forces between a silicon tip and a silicon surface at tilt angles ranging from 5 degrees to 25 degrees were measured. The results show that the measured friction coefficient increases with the tilt angle effectively, whereas the variation range of the corrected friction coefficient is within 10%.

Nano-oxidation of an amorphous silicon surface with an atomic force microscope

2002 ◽  
Vol 299-302 ◽  
pp. 1090-1094 ◽  
Author(s):  
I Umezu ◽  
T Yoshida ◽  
K Matsumoto ◽  
M Inada ◽  
A Sugimura
Keyword(s):  
Atomic Force Microscope ◽  
Amorphous Silicon ◽  
Silicon Surface ◽  
Atomic Force

Anisotropic Slope Distribution and Bidirectional Reflectance of a Rough Silicon Surface

2004 ◽  
Vol 126 (6) ◽  
pp. 985-993 ◽  
Author(s):  
Q. Z. Zhu ◽  
Z. M. Zhang
Keyword(s):  
Distribution Function ◽  
Atomic Force Microscope ◽  
Silicon Surface ◽  
The Other ◽  
Two Dimensional ◽  
Bidirectional Reflectance Distribution Function ◽  
Bidirectional Reflectance ◽  
One Dimensional ◽  
Atomic Force ◽  
Bidirectional Reflectance Distribution

Both one-dimensional (1D) and two-dimensional (2D) slope distributions were obtained from the surface topographic data, measured using an atomic force microscope for a rough silicon surface. The resulted slope distributions deviate significantly from the Gaussian distribution, with noticeable side peaks. The bidirectional reflectance distribution function (BRDF) of the same surface, measured with a laser scatterometer at 635 nm and 785 nm, exhibits subsidiary peaks. The measured slope distributions are implanted into a geometric optics model to predict the in-plane BRDF for different azimuthal angles. The 1D slope distribution has some success in predicting the BRDF at limited azimuthal angles, but is not applicable to other cases. On the other hand, the BRDF predicted using the 2D slope distribution matches well with the experimental results for any azimuthal angles. The method developed here may also help predict the BRDF for other rough surfaces with microstructures.

Modification of Silicon Surface Using Atomic Force Microscope with Conducting Probe

1993 ◽  
Vol 32 (Part 2, No. 7B) ◽  
pp. L1021-L1023 ◽  
Author(s):  
Masatoshi Yasutake ◽  
Yasunori Ejiri ◽  
Takeo Hattori
Keyword(s):  
Atomic Force Microscope ◽  
Silicon Surface ◽  
Atomic Force

Nanomachining of Silicon Surface Using Atomic Force Microscope With Diamond Tip

2005 ◽  
Vol 128 (3) ◽  
pp. 723-729 ◽  
Author(s):  
Noritaka Kawasegi ◽  
Noboru Takano ◽  
Daisuke Oka ◽  
Noboru Morita ◽  
Shigeru Yamada ◽  
...  
Keyword(s):  
Single Crystal ◽  
Atomic Force Microscope ◽  
Silicon Surface ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Machining Parameters ◽  
Crystal Silicon ◽  
Atomic Force ◽  
Ductile Mode ◽  
Hot Filament

This paper investigates nanomachining of single-crystal silicon using an atomic force microscope with a diamond-tip cantilever. To enable nanomachining of silicon, a nanomachining cantilever with a pyramidal diamond tip was developed using a combination of photolithography and hot-filament chemical vapor deposition. Nanomachining experiments on silicon using the cantilever are demonstrated under various machining parameters. The silicon surface can be removed with a rate of several tens to hundreds of nanometers in ductile mode, and the cantilever shows superior wear resistance. The experiments demonstrate successful nanomachining of single-crystal silicon.

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