Thermoelectric figure of merit in solid solutions with phonon scattering by off-center impurities

2003 ◽  
Vol 37 (3) ◽  
pp. 276-282 ◽  
Author(s):  
E. A. Gurieva ◽  
P. P. Konstantinov ◽  
L. V. Prokof’eva ◽  
Yu. I. Ravich ◽  
M. I. Fedorov
Keyword(s):  
Solid Solutions ◽  
Figure Of Merit ◽  
Phonon Scattering ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure

Influence of multi-sintering on the thermoelectric properties of Bi2Sr2Co2Oy ceramics

2019 ◽  
Vol 34 (02) ◽  
pp. 2050019 ◽  
Author(s):  
Y. Zhang ◽  
M. M. Fan ◽  
C. C. Ruan ◽  
Y. W. Zhang ◽  
X.-J. Li ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Phonon Scattering ◽  
Sintered Sample ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
The Third ◽  
Ceramic Samples ◽  
Optimum Formula

[Formula: see text] ceramic samples have a structure similar to phonon glass electronic crystals, and their thermoelectric properties can be effectively adjusted through repeated grinding and sintering. The results show that multi-sintering can make their grain refined and increase their grain boundary, which will effectively increase density and phonon scattering. Finally, multi-sintering can reduce the resistivity and thermal conductivity, thus obviously improve thermoelectric figure of merit [Formula: see text] of [Formula: see text]. The optimum [Formula: see text] value of 0.26 is achieved at 923 K by the third sintered sample.

Thermoelectric Properties of n-Type 90% Bi2Te3+10%Bi2Se3 Thermoelectric Materials Produced by Melt Spinning Method and Sintering

2007 ◽  
Vol 534-536 ◽  
pp. 161-164 ◽  
Author(s):  
Taek Soo Kim ◽  
Byong Sun Chun
Keyword(s):  
Solid Solutions ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Melt Spinning ◽  
Bending Strength ◽  
Sintering Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Vacuum Sintering ◽  
Thermoelectric Figure ◽  
Sintering Processes

N-type Bi2Te3-Sb2Te3 solid solutions doped with CdCl2 was prepared by melt spinning, crushing and vacuum sintering processes. Microstructure, bending strength and thermoelectric property were investigated as a function of the doping quantity from 0.03wt.% to 0.10wt.% and sintering temperature from 400oC to 500oC, and finally compared with those of conventionally fabricated alloys. The alloy showed a good structural homogeneity as well as bending strength of 3.88Kgf/mm2. The highest thermoelectric figure of merit was obtained by doping 0.03wt.% and sintering at 500oC.

scholarly journals Термоэлектрические свойства твердых растворов (CuInSe-=SUB=-2-=/SUB=-)-=SUB=-1-x-=/SUB=-(In-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-)-=SUB=-x-=/SUB=-

2022 ◽  
Vol 56 (1) ◽  
pp. 38
Author(s):  
Ч.И. Абилов ◽  
М.Ш. Гасанова ◽  
Н.Т. Гусейнова ◽  
Э.К. Касумова
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Solid Solutions ◽  
Figure Of Merit ◽  
Charge Carriers ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Mobility Of Charge Carriers ◽  
Temperature Dependences ◽  
Thermoelectric Coefficient

The results of studying the temperature dependences of electrical conductivity, thermoelectric coefficient, Hall mobility of charge carriers, total and electronic thermal conductivity, as well as phonon thermal resistance of alloys of (CuInSe2)1-x(In2Te3)x solid solutions at x=0.005 and 0.0075 are presented. The values ​​of these parameters for certain temperatures were used to calculate the values ​​of the thermoelectric figure of merit of the indicated compositions. It turned out that as the temperature rises, the thermoelectric figure of merit tends to grow strongly, from which it can be concluded that these materials can be used in the manufacture of thermoelements.

Enhanced thermoelectric figure of merit in SiGe alloy nanowires by boundary and hole-phonon scattering

2011 ◽  
Vol 110 (7) ◽  
pp. 074317 ◽  
Author(s):  
Julio A. Martinez ◽  
Paula P. Provencio ◽  
S. T. Picraux ◽  
John P. Sullivan ◽  
B. S. Swartzentruber
Keyword(s):  
Figure Of Merit ◽  
Phonon Scattering ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Sige Alloy ◽  
Alloy Nanowires

scholarly journals First-principles study of thermoelectric properties of Mg2Si–Mg2Pb semiconductor materials

RSC Advances ◽  
2018 ◽  
Vol 8 (31) ◽  
pp. 17168-17175 ◽  
Author(s):  
Tao Fan ◽  
Congwei Xie ◽  
Shiyao Wang ◽  
Artem R. Oganov ◽  
Laifei Cheng
Keyword(s):  
Thermoelectric Properties ◽  
Solid Solutions ◽  
First Principles ◽  
Figure Of Merit ◽  
Semiconductor Materials ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
First Principles Study

Thermoelectric figure of merit of Mg2Si1−xPbx solid solutions as a function of temperature.

Thermoelectric Transport in Superlattices

1997 ◽  
Vol 478 ◽  
Author(s):  
T. L. Reinecke ◽  
D. A. Broido
Keyword(s):  
Exact Solution ◽  
Figure Of Merit ◽  
Phonon Scattering ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Thermoelectric Transport ◽  
Barrier Layers ◽  
Thermoelectric Transport Properties ◽  
Carrier Tunneling

AbstractThe thermoelectric transport properties of superlattices have been studied using an exact solution of the Boltzmann equation. The role of heat transport along the barrier layers, of carrier tunneling through the barriers, of valley degeneracy and of the well width and energy dependences of the carrier-phonon scattering rates on the thermoelectric figure of merit are given. Calculations are given for Bi2Te3 and for PbTe, and the results of recent experiments are discussed.

Enhancement of Thermoelectric Figure-of-Merit by a Nanostructure Approach

2009 ◽  
Vol 1166 ◽  
Author(s):  
Zhifeng Ren ◽  
Bed Poudel ◽  
Yi Ma ◽  
Yucheng Lan ◽  
Austin Minnich ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Figure Of Merit ◽  
Phonon Scattering ◽  
Extended Period ◽  
Thermoelectric Figure Of Merit ◽  
Stability Studies ◽  
Bulk Materials ◽  
Thermoelectric Figure ◽  
Material Systems ◽  
Power Generation Systems

AbstractThe dimensionless thermoelectric figure-of-merit (ZT) in bulk materials has remained about 1 for many years. Here we show that a significant ZT improvement can be achieved in nanocrystalline bulk materials. These nanocrystalline bulk materials were made by hot-pressing nanopowders that are ball-milled from either crystalline ingots or elements. Electrical transport measurements, coupled with microstructure studies and modeling, show that the ZT improvement is the result of low thermal conductivity caused by the increased phonon scattering by grain boundaries and defects. More importantly, the nanostructure approach has been demonstrated in a few thermoelectric material systems, proving its generosity. The approach can be easily scaled up to multiple tons. Thermal stability studies have shown that the nanostructures are stable at the application temperature for an extended period of time. It is expected that such enhanced materials will make the existing cooling and power generation systems more efficient.

scholarly journals First-principles prediction of structural stability and thermoelectric properties of SrGaSnH

RSC Advances ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 3304-3314
Author(s):  
Enamul Haque ◽  
Mizanur Rahaman
Keyword(s):  
Thermal Conductivity ◽  
Structural Stability ◽  
Thermoelectric Properties ◽  
First Principles ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure

Weak anharmonicity: the weak anharmonicity leads to weak phonon scattering in SrGaSnH. Thus, SrGaSnH intrinsically possesses a high lattice thermal conductivity (kl).. Such large κl dramatically reduces the thermoelectric figure of merit.

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