Features of the spatial distribution of indium in InGaN epitaxial layers grown by plasma-assisted molecular beam epitaxy

2008 ◽  
Vol 42 (5) ◽  
pp. 616-623 ◽  
Author(s):  
V. N. Jmerik ◽  
A. M. Mizerov ◽  
T. V. Shubina ◽  
D. S. Plotnikov ◽  
M. V. Zamoryanskaya ◽  
...  
Keyword(s):  
Spatial Distribution ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers

Nitrogen-Passivation Effects of Si Substrates on Properties of ZnO Epitaxial Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

2010 ◽  
Vol 56 (3) ◽  
pp. 827-831 ◽  
Author(s):  
Jae-Young Leem ◽  
Min Su Kim ◽  
Ghun Sik Kim ◽  
Min Young Cho ◽  
Do Yeob Kim ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Si Substrates

Influence of Off-Oriented Substrates on Heteroepitaxial Growth of (Ca, Sr)F2 Layers on Si (100)

1989 ◽  
Vol 160 ◽  
Author(s):  
Tetsuroh Minemura ◽  
Junko Asano ◽  
Kazuo Tsutsui ◽  
Seijiro Furukawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Considerable Influence ◽  
Heteroepitaxial Growth ◽  
Remarkable Effect

AbstractHeteroepitaxial growth of CaxSr1-xF2 layers on Si (100) substrates by molecular beam epitaxy has been investigated for GaAs / fluoride / Si structures. The Si (100) substrates off-oriented toward [011] show no considerable influence on crystallinity of CaF2 and SrF2 epitaxial layers. The off - oriented substrates, however, influence a remarkable effect on CaxSr1-xF2 layers, resulting in poor crystallinity rather than good one. This influence of off-oriented Si (100) substrates on the heteroepitaxy of CaxSr1-xF2 layers was the opposite of that found in GaAs/Si (100) structures.

HOPPING MAGNETOTRANSPORT IN THE δ-DOPING LAYER

1994 ◽  
Vol 08 (07) ◽  
pp. 789-800 ◽  
Author(s):  
F. Koch
Keyword(s):  
Molecular Beam Epitaxy ◽  
Magnetic Flux ◽  
Molecular Beam ◽  
Negative Magnetoresistance ◽  
Epitaxial Layers ◽  
Interference Effects ◽  
Hopping Transport ◽  
Coherent Superposition ◽  
Planar Arrays

We review the observations on hopping transport in planar arrays of Si donor atoms in GaAs epitaxial layers grown by molecular beam epitaxy. It is shown that properly designed δ-doping layers permit one to unambigously identify interference effects that result from the coherent superposition of the tunneling amplitudes along alternative paths in the plane. Magnetic flux through the area generated by the paths destroys the interference and leads to negative magnetoresistance. We discuss the observed non-monotonic variation of the resistance.

scholarly journals Exciton spectra of ZnO epitaxial layers on lattice-matched substrates grown with laser-molecular-beam epitaxy

2000 ◽  
Vol 76 (24) ◽  
pp. 3549-3551 ◽  
Author(s):  
T. Makino ◽  
C. H. Chia ◽  
N. T. Tuan ◽  
Y. Segawa ◽  
M. Kawasaki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Laser Molecular Beam Epitaxy ◽  
Lattice Matched

Development of AlAsSb as a barrier material for ultra-thin-channel InGaAs nMOSFETs

2013 ◽  
Vol 1561 ◽  
Author(s):  
Cheng-Ying Huang ◽  
Jeremy J. M. Law ◽  
Hong Lu ◽  
Mark J. W. Rodwell ◽  
Arthur C. Gossard
Keyword(s):  
Molecular Beam Epitaxy ◽  
Carrier Concentration ◽  
Electron Mobility ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Barrier Material ◽  
Double Heterostructures ◽  
Thin Channel ◽  
Si Doped ◽  
Lattice Matched

ABSTRACTWe investigated AlAs0.56Sb0.44 epitaxial layers lattice-matched to InP grown by molecular beam epitaxy (MBE). Silicon (Si) and tellurium (Te) were studied as n-type dopants in AlAs0.56Sb0.44 material. Similar to most Sb-based materials, AlAs0.56Sb0.44 demonstrates a maximum active carrier concentration around low-1018 cm-3 when using Te as a dopant. We propose the use of a heavily Si-doped InAlAs layer embedded in the AlAsSb barrier as a modulation-doped layer. The In0.53Ga0.47As/AlAs0.56Sb0.44 double heterostructures with a 10 nm InGaAs well show an electron mobility of about 9400 cm2/V・s at 295 K and 32000 cm2/V・s at 46 K. A thinner 5 nm InGaAs well has an electron mobility of about 4300 cm2/V・s at 295 K. This study demonstrates that AlAs0.56Sb0.44 is a promising barrier material for highly scaled InGaAs MOSFETs and HEMTs.

Growth mode of AlN epitaxial layers on 6H-SiC by plasma assisted molecular beam epitaxy

2000 ◽  
Vol 209 (2-3) ◽  
pp. 415-418 ◽  
Author(s):  
Gabriel Ferro ◽  
Hajime Okumura ◽  
Sadafumi Yoshida
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Mode ◽  
Epitaxial Layers

scholarly journals HgTe and CdTe epitaxial layers and HgTe–CdTe superlattices grown by laser molecular beam epitaxy

1986 ◽  
Vol 4 (4) ◽  
pp. 2086-2090 ◽  
Author(s):  
J. T. Cheung ◽  
G. Niizawa ◽  
J. Moyle ◽  
N. P. Ong ◽  
B. M. Paine ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Laser Molecular Beam Epitaxy

Study of Ohmic Contacts on P-Type ZnSe and ZnSe Epitaxial Layers Grown by Molecular Beam Epitaxy

1992 ◽  
Vol 281 ◽  
Author(s):  
C. Piskoti ◽  
B. Mykolajenko ◽  
M. Vaziri
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Metal Contact ◽  
Epitaxial Layers ◽  
Preliminary Results ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

ABSTRACTTo study the formation of ohmic contacts, several metals have been deposited on p-types ZnTe and ZnSe epitaxial layers. The metals were deposited on the layers either by simple evaporation or by electroplating. The current-voltage characteristics associated with each metal contact were measured. The preliminary results of these measurements indicate that electroplating is a better technique for making ohmic contact to these layers.

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