Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths

In this work, the optical absorption coefficients and the refractive index changes for the infinite and finite semi-parabolic quantum well are calculated. Numerical calculations are performed for typical GaAs / Al x Ga 1-x As semi-parabolic quantum well. The energy eigenvalues and eigenfunctions of these systems are calculated numerically. Optical properties are obtained using the compact density matrix approach. Results show that the energy eigenvalues and the matrix elements of the infinite and finite cases are different. The calculations reveal that the resonant peaks of the optical properties of the finite case occur at lower values of the incident photon energy with respect to the infinite case. Results indicate that the maximum value of the refractive index changes for the finite case are greater than that of the infinite case. Our calculations also show that in contrast to the infinite case, the resonant peak value of the total absorption coefficient in the case of the finite well is a non-monotonic function of the semi-parabolic confinement frequency.

Download Full-text

45° REFLECTOMETRY OF SEMICONDUCTOR QUANTUM WELLS

Modern Physics Letters B ◽

10.1142/s0217984901002294 ◽

2001 ◽

Vol 15 (17n19) ◽

pp. 683-687

Author(s):

A. SILVA-CASTILLO ◽

F. PEREZ-RODRIGUEZ

Keyword(s):

Quantum Well ◽

Quantum Wells ◽

Growth Direction ◽

Angle Of Incidence ◽

Near Surface ◽

New Information ◽

Difference Formula ◽

Exciton Polaritons ◽

The Difference ◽

First Time

We have applied the 45° reflectometry for the first time to study exciton-polaritons in quantum wells. The 45° reflectometry is a new polarization-modulation technique, which is based on the measurement of the difference [Formula: see text] between the p-polarization reflectivity (Rp) and the squared s-polarization reflectivity [Formula: see text] at an angle of incidence of 45°. We show that [Formula: see text] spectra may provide qualitatively new information on the exciton-polariton modes in a quantum well. These optical spectra turn out to be very sensitive to the zeros of the dielectric function along the quantum-well growth direction and, therefore, allow to identify the resonances associated with the Z exciton-polariton mode. We demonstrate that 45° reflectometry could be a powerful tool for studying Z exciton-polariton modes in near-surface quantum wells, which are difficult to observe in simple spectra of reflectivity Rp

Download Full-text

Electrical and optical properties of convex-type metamorphic In0.75Ga0.25As/In0.7Al0.3As quantum well structures grown by MBE on GaAs

Materials Research Express ◽

10.1088/2053-1591/aa8f0c ◽

2017 ◽

Vol 4 (10) ◽

pp. 105902

Author(s):

T A Komissarova ◽

M Yu Chernov ◽

V A Solov’ev ◽

B Ya Meltser ◽

P N Brunkov ◽

...

Keyword(s):

Optical Properties ◽

Quantum Well ◽

Electrical And Optical Properties ◽

Quantum Well Structures

Download Full-text

Structural, electrical and optical properties of Si delta-doped Al0.27Ga0.73As/GaAs single quantum wells grown by metalorganic chemical vapour deposition

Semiconductor Science and Technology ◽

10.1088/0268-1242/9/10/012 ◽

1994 ◽

Vol 9 (10) ◽

pp. 1823-1826 ◽

Cited By ~ 3

Author(s):

T W Kim ◽

Y Kim ◽

S -K Min ◽

J Y Lee ◽

S J Lee

Keyword(s):

Optical Properties ◽

Quantum Wells ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Single Quantum ◽

Electrical And Optical Properties ◽

Metalorganic Chemical Vapour Deposition ◽

Metalorganic Chemical

Download Full-text

Structural and Optical Properties of Nitride-Based Heterostructure and Quantum-Well Structure

MRS Proceedings ◽

10.1557/proc-449-1143 ◽

1996 ◽

Vol 449 ◽

Cited By ~ 39

Author(s):

H. Amano ◽

T. Takeuchi ◽

S. Sota ◽

H. Sakai ◽

I. Akasaki

Keyword(s):

Optical Properties ◽

Quantum Well ◽

Quantum Wells ◽

Stark Effect ◽

Compressive Strain ◽

Ternary Alloys ◽

Luminescence Properties ◽

Structural And Optical Properties ◽

Quantum Confined Stark Effect ◽

Quantum Well Structure

ABSTRACTStructural and optical properties of nitride based heterostructure and quantum well structure were investigated. Both AIGaN and GaInN ternary alloys are found to grow coherently on the underlying GaN layer. Compressive strain of GaInN is found to cause quantum confined Stark effect, thus affects the luminescence properties of nitride-based quantum wells.

Download Full-text