Effect of the Hydrogen Concentration on the Pd/n-InP Schottky Diode Photocurrent

2019 ◽  
Vol 53 (2) ◽  
pp. 234-236 ◽  
Author(s):  
E. A. Grebenshchikova ◽  
V. G. Sidorov ◽  
V. A. Shutaev ◽  
Yu. P. Yakovlev
Keyword(s):  
Hydrogen Concentration ◽  
Schottky Diode

scholarly journals Влияние концентрации водорода на фототок диодов Шоттки Pd/n-InP

2019 ◽  
Vol 53 (2) ◽  
pp. 246
Author(s):  
Е.А. Гребенщикова ◽  
В.Г. Сидоров ◽  
В.А. Шутаев ◽  
Ю.П. Яковлев
Keyword(s):  
Hydrogen Concentration ◽  
Schottky Diode ◽  
Response Rate ◽  
Short Circuit ◽  
Schottky Diodes ◽  
Illumination Intensity ◽  
Gas Mixture ◽  
Simultaneous Exposure ◽  
Variation Rate

AbstractThe variation rate of the short-circuit photocurrent of Pd/ n -InP Schottky diodes is studied as a function of the presence of hydrogen in a gas mixture with H_2 concentrations of 1–100 vol %. It is shown that upon the simultaneous exposure of the Schottky diode to a hydrogen-containing gas mixture and to light (λ = 0.9 μm), the hydrogen concentration in the gas mixture and the Pd/ n -InP diode photocurrent variation rate are related exponentially. The Schottky-diode response rate to the presence of hydrogen in the gas mixture increases with the illumination intensity.

Using Optical Activation to Create Hydrogen and Hydrogen-Containing Gas Sensors

2020 ◽  
Vol 854 ◽  
pp. 87-93 ◽  
Author(s):  
Khafiz M. Salikhov ◽  
Nikolay D. Stoyanov ◽  
Tatyana V. Stoyanova
Keyword(s):  
Hydrogen Concentration ◽  
Schottky Diode ◽  
Gas Sensors ◽  
Room Temperature ◽  
Schottky Diodes ◽  
Original Design ◽  
Peltier Cooler ◽  
Strong Change ◽  
Optical Activation ◽  
Small Change

It was found that at room temperature the value of the photoinduced current of Schottky diodes based on heterostructures InP/GaInAs/Pd at a hydrogen concentration of 0.03% is reduced by two orders of magnitude compared to the value without hydrogen. The value of the photoinduced current depends on the thickness of the depleted region on the surface of the semiconductor. A small change in the charged layer of H+ can cause a significant change in the thickness of this region and as a result, a strong change in the photoinduced current. This effect on current is much stronger than the influence of hydrogen concentration or capacitance without optical activation. As a result, it becomes possible to create hydrogen and hydrogen-containing gas sensors with much better sensitivity at room temperature. The original design of a miniature H2 sensor including an IR LED, a Schottky diode with a Pd contact, a Peltier cooler and a thermosensor is demonstrated.

Hydrogen concentration monitoring in subsoil air on tectonic faults on the territory adjacent to NPP

2016 ◽  
Vol 2016 (2) ◽  
pp. 163-171
Author(s):  
Georgij Konstantinovich Ignatenko ◽  
Pyotr Ivanovich Gremchenko ◽  
Yurij Mihajlovich Glushkov
Keyword(s):  
Hydrogen Concentration ◽  
Tectonic Faults

Control of hydrogen absorption by nickel films obtained upon magnetic spraying of zirconium alloy using the thermoEMF method

2020 ◽  
Vol 86 (8) ◽  
pp. 32-37
Author(s):  
V. V. Larionov ◽  
Xu Shupeng ◽  
V. N. Kudiyarov
Keyword(s):  
Magnetron Sputtering ◽  
Hydrogen Concentration ◽  
Hydrogen Absorption ◽  
Zirconium Alloy ◽  
Hydrogen Adsorption ◽  
Zirconium Alloys ◽  
Nickel Film ◽  
Protective Film ◽  
Nickel Films ◽  
Hydrogen Penetration

Nickel films formed on the surface of zirconium alloys are often used to protect materials against hydrogen penetration. Hydrogen adsorption on nickel is faster since the latter actively interacts with hydrogen, oxidizes and forms a protective film. The goal of the study is to develop a method providing control of hydrogen absorption by nickel films during vacuum-magnetron sputtering and hydrogenation via measuring thermoEMF. Zirconium alloy E110 was saturated from the gas phase with hydrogen at a temperature of 350°C and a pressure of 2 atm. A specialized Rainbow Spectrum unit was used for coating. It is shown that a nickel film present on the surface significantly affects the hydrogen penetration into the alloy. A coating with a thickness of more than 2 μm deposited by magnetron sputtering on the surface of a zirconium alloy with 1% Nb, almost completely protects the alloy against hydrogen penetration. The magnitude of thermoemf depends on the hydrogen concentration in the zirconium alloy and film thickness. An analysis of the hysteresis width of the thermoEMF temperature loop and a method for determining the effective activation energy of the conductivity of a hydrogenated material coated with a nickel film are presented. The results of the study can be used in assessing the hydrogen concentration and, hence, corrosion protection of the material.

Temperature-Dependent Logic Failure in a GaAs Power Amplifier-Duplexer Module Caused by a Subtle Parasitic Schottky Diode

2014 ◽  
Author(s):  
Rose Emergo ◽  
Steve Brockett ◽  
Pat Hamilton
Keyword(s):  
Power Amplifier ◽  
Schottky Diode ◽  
Production Test ◽  
Temperature Dependent ◽  
Cold Temperatures ◽  
Collector Junction ◽  
Power Mode ◽  
The Difference ◽  
Base Contact ◽  
Single Power

Abstract A single power amplifier-duplexer device was submitted by a customer for analysis. The device was initially considered passing when tested against the production test. However, further electrical testing suggested that the device was stuck in a single power mode for a particular frequency band at cold temperatures only. This paper outlines the systematic isolation of a parasitic Schottky diode formed by a base contactcollector punch through process defect that pulled down the input of a NOR gate leading to the incorrect logic state. Note that this parasitic Schottky diode is parallel to the basecollector junction. It was observed that the logic failure only manifested at colder temperatures because the base contact only slightly diffused into the collector layer. Since the difference in the turn-on voltages between the base-collector junction and the parasitic Schottky diode increases with decreasing temperature, the effect of the parasitic diode is only noticeable at lower temperatures.

Methodology for Analysis of Schottky Diode Failures

2010 ◽  
Author(s):  
Bhanu P. Sood ◽  
Michael Pecht ◽  
John Miker ◽  
Tom Wanek
Keyword(s):  
Failure Mode ◽  
Schottky Diode ◽  
Failure Modes ◽  
Schottky Diodes ◽  
Failure Mechanisms ◽  
Forward Voltage ◽  
Fast Switching ◽  
Voltage Drops ◽  
The Common

Abstract Schottky diodes are semiconductor switching devices with low forward voltage drops and very fast switching speeds. This paper provides an overview of the common failure modes in Schottky diodes and corresponding failure mechanisms associated with each failure mode. Results of material level evaluation on diodes and packages as well as manufacturing and assembly processes are analyzed to identify a set of possible failure sites with associated failure modes, mechanisms, and causes. A case study is then presented to illustrate the application of a systematic FMMEA methodology to the analysis of a specific failure in a Schottky diode package.

Pseudomorphic GaInP Schottky diode and MSM detector on InP

1990 ◽  
Vol 26 (7) ◽  
pp. 487 ◽  
Author(s):  
S. Loualiche ◽  
A. le Corre ◽  
A. Ginudi ◽  
L. Henry ◽  
C. Vaudry ◽  
...  
Keyword(s):  
Schottky Diode

Photo-responsive Schottky Diode Behavior of a Donor-Acceptor Co-crystal with Violet Blue Light Emission

CrystEngComm ◽  
2021 ◽  
Author(s):  
Sanjay Kumar ◽  
Soumen Singha ◽  
Rajkumar Jana ◽  
RITUPARNA MONDAL ◽  
Partha Pratim Bag ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Transport Property ◽  
Schottky Diode ◽  
Electronic Transport ◽  
Supramolecular Structure ◽  
Light Emission ◽  
Electronic Transport Property ◽  
Blue Light Emission ◽  
Donor Acceptor ◽  
Diode Behavior

Herein, we report the crystal structure, supramolecular structure, electronic transport property and optoelectronic behaviour of a co-crystal made of tetrabromoterephthalic acid (TBTA) and quinoxaline (QUIN) (1:1). The sample has been...

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