Description of the Magnetization Oscillations of a Silicon Nanostructure in Weak Fields at Room Temperature. The Lifshitz–Kosevich Formula with Variable Effective Carrier Mass

2020 ◽  
Vol 54 (12) ◽  
pp. 1593-1597
Author(s):  
V. V. Romanov ◽  
V. A. Kozhevnikov ◽  
V. A. Mashkov ◽  
N. T. Bagraev
Keyword(s):  
Room Temperature ◽  
Silicon Nanostructure ◽  
Weak Fields ◽  
Effective Carrier

scholarly journals Light-induced Recovery of Effective Carrier Lifetime in Boron-doped Czochralski Silicon at Room Temperature

2016 ◽  
Vol 92 ◽  
pp. 801-807 ◽  
Author(s):  
Hiroaki Ichikawa ◽  
Isao Takahashi ◽  
Noritaka Usami ◽  
Katsuhiko Shirasawa ◽  
Hidetaka Takato
Keyword(s):  
Room Temperature ◽  
Carrier Lifetime ◽  
Czochralski Silicon ◽  
Boron Doped ◽  
Effective Carrier

scholarly journals Prepared and Characteristics of ZnO:YAG/Silicon Nanostructure Diodes Prepared by Ultrasonic Spraying

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Chih-Hung Hsu ◽  
Lung-Chien Chen ◽  
Jia-Ren Wu
Keyword(s):  
Silicon Substrate ◽  
Room Temperature ◽  
Yttrium Aluminum Garnet ◽  
Broad Band ◽  
Ultrasonic Spray Pyrolysis ◽  
Zno Film ◽  
Ultrasonic Spray ◽  
Silicon Nanostructure ◽  
Yttrium Aluminum ◽  
Level Transition

This work presents a novel white light source. An yttrium aluminum garnet (YAG) phosphor incorporated zinc oxide (ZnO) (ZnO:YAG) film is deposited on a silicon substrate by ultrasonic spray pyrolysis to form a nanostructure diode. A nanoflower consisting of a hexagonal nanopetal is formed on the surfaces of the silicon substrate. A white broad band at the room temperature photoluminescence ranging from 420 to 650 nm for the ZnO:YAG/silicon nanostructure diode was observed. The white broad band consists of the emissions of defect level transition of the ZnO film and the5D4level to the7F6and7F5level transitions of Ce3+ions.

scholarly journals Осцилляции де Гааза--ван Альфена в кремниевой наноструктуре в слабых магнитных полях при комнатной температуре

2019 ◽  
Vol 53 (12) ◽  
pp. 1647
Author(s):  
В.В. Романов ◽  
В.А. Кожевников ◽  
C.T. Tracey ◽  
Н.Т. Баграев
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Magnetic Fields ◽  
Field Dependence ◽  
Room Temperature ◽  
Weak Magnetic Fields ◽  
Effective Carrier

AbstractThe field dependence of magnetization of a silicon nanosandwich measured at room temperature in weak magnetic fields manifests de Haas–van Alphen oscillations, the behavior of which is explained under the condition of the dependence of the effective carrier mass on the external magnetic field.

Magnetotransport Properties of MnGeAs2 Films

2017 ◽  
Vol 864 ◽  
pp. 116-120
Author(s):  
Yun Ki Kim ◽  
J.B. Ketterson
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Anomalous Hall Effect ◽  
Current Voltage ◽  
Spin Polarized ◽  
Current Voltage Characteristics ◽  
Small Change ◽  
P Type ◽  
Effective Carrier

MnGeAs2 thin films were successfully deposited on GaAs(100) substrate. The films exhibited room-temperature ferromagnetism with TC ~ 330 K, based on both magnetization and resistance measurements at temperatures from 5 to 370 K. The coercive fields at 5 and 300 K were 2100 and 50 Oe. The anomalous Hall effect was observed, suggesting the existence of spin polarized carriers in MnGeAs2 thin films. The magnetoresistance (MR) measurements showed very small change (~ 0.1% at 5 K) in resistance at low temperature. The MR value at 5 K was smaller than that (~ 9% at 305 K) at room temperature (305 K). Type of majority carriers in the films was determined to be n-type by Hall measurement above the transition temperature. The effective carrier density was 1.8´1020 cm-3. The diode current-voltage characteristics were shown in a hetero-junction MnGeAs2 film on a conducting p-type GaAs substrate.

scholarly journals The change of electrical conductivity in strong magnetic fields. Part I. —Experimental results

1929 ◽  
Vol 123 (791) ◽  
pp. 292-341 ◽  
Keyword(s):  
Magnetic Field ◽  
Electrical Conductivity ◽  
Magnetic Fields ◽  
Room Temperature ◽  
Linear Part ◽  
Strong Magnetic Fields ◽  
Other Substances ◽  
Different Temperatures ◽  
Weak Fields ◽  
The Magnetic Field

In a recent paper the author described experiments on the change of resistance of bismuth crystals in magnetic fields up to 300,000 gauss. In agreement with previous investigators it was found that the resistance of bismuth in weak fields increases in proportion to the square of the magnetic field, and in stronger fields follows a linear law, the increase of resistance being proportional to the magnetic field up to fields of 300 kilogauss. It was further found that this linear part of the change of resistance is, in most cases, independent of the orientation of the crystal in the magnetic field, and also of the degree of perfection of the crystal. This suggests that we are concerned with an atomic phenomenon. On studying several other substances it was found that the increase of resistance, although on a much smaller scale, is similar to that observed in bismuth, following first the square law and in fields above 60 to 100 kilogauss a linear law. This has led to a systematic study of the elements throughout the periodic table. About 35 different metals have been investigated at different temperatures, varying from room temperature to the temperature of liquid nitrogen, and the law of change of resistance mentioned above is found to be general for all.

SUPPRESSION OF SILICON NANOSTRUCTURE GROWTH BY MEDIUM ENERGY NITROGEN ION IMPLANTATION

2004 ◽  
Vol 03 (04n05) ◽  
pp. 431-437
Author(s):  
V. J. KENNEDY ◽  
S. JOHNSON ◽  
A. MARKWITZ ◽  
M. RUDOLPHI ◽  
H. BAUMANN ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Growth Control ◽  
Low Energy ◽  
Medium Energy ◽  
Nitrogen Ion Implantation ◽  
Silicon Nanostructure ◽  
Nitrogen Ion ◽  
Simple Technology ◽  
20 Nm

A novel nanofabrication technology to produce dense arrays of silicon nanowhiskers up to 20 nm high has been developed. This rapid and simple technology employs electron beam rapid thermal annealing (EB-RTA) of untreated silicon. Pre-implantation of the silicon substrate with nitrogen at low energy (5 keV) has been shown to suppress the formation of these nanostructures. In this paper we demonstrate identical silicon nanostructure growth suppression when produced following nitrogen ion implantation at 50 keV and 100 keV. Specimens were implanted at room temperature and subsequently annealed at 1000°C for 15 s (temperature gradient 5° Cs -1). Specific results obtained from AFM and NRA analysis are discussed highlighting the possibility of silicon nanowhisker growth control using nitrogen ion implantation.

scholarly journals Термодинамическое описание осцилляций намагниченности кремниевой наноструктуры в слабых полях при комнатной температуре. Плотность состояний

2019 ◽  
Vol 53 (12) ◽  
pp. 1651
Author(s):  
В.В. Романов ◽  
В.А. Кожевников ◽  
Н.Т. Баграев
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Magnetic Fields ◽  
Fermi Level ◽  
Density Of States ◽  
Room Temperature ◽  
Critical Values ◽  
Weak Magnetic Fields ◽  
Silicon Nanostructure ◽  
Field Strengths

AbstractThe observation of de Haas–van Alphen oscillations when studying the silicon nanostructure at room temperature in weak magnetic fields enables the use of thermodynamic relations to calculate the density of states at the Fermi level at critical values of external magnetic-field strengths for integer filling factors.

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