Formation of Superhard Coatings during Treatment of Titanium Films with Low-Temperature Nitrogen Plasma in Open Atmosphere

2021 ◽  
Author(s):  
M. Kh. Gadzhiev ◽  
R. M. Emirov ◽  
A. E. Muslimov ◽  
M. G. Ismailov ◽  
V. M. Kanevskii
Keyword(s):  
Low Temperature ◽  
Nitrogen Plasma ◽  
Open Atmosphere ◽  
Superhard Coatings

scholarly journals Формирование сверхтвердых покрытий в процессе обработки низкотемпературной плазмой азота в открытой атмосфере пленок титана

2021 ◽  
Vol 47 (9) ◽  
pp. 44
Author(s):  
М.Х. Гаджиев ◽  
Р.М. Эмиров ◽  
А.Э. Муслимов ◽  
М.Г. Исмаилов ◽  
В.М. Каневский
Keyword(s):  
Low Temperature ◽  
Plasma Treatment ◽  
High Resistance ◽  
Treatment Process ◽  
Nitrogen Plasma ◽  
Rutile Structure ◽  
Open Atmosphere ◽  
High Productivity ◽  
Sapphire Substrates ◽  
Superhard Coatings

Results of the formation of superhard coatings in the low-temperature nitrogen plasma treatment process in the open atmosphere of titanium films on sapphire substrates are given. It is shown that during plasma treatment a coating of nitrogen-containing TiO2 with rutile structure is formed with a double increase (in comparison with rutile TiO2) of microhardness (up to 27 GPa). The application of this coating leads to hardening of the surface of sapphire plates by 22-23%. High productivity and implementation of synthesis in an open atmosphere make it possible to consider the proposed procedure is promising for the production of superhard coatings with high resistance to oxygen.

Mechanism of low temperature nitridation of silicon oxide layers by nitrogen plasma generated by low energy electron impact

1999 ◽  
Vol 85 (5) ◽  
pp. 2921-2928 ◽  
Author(s):  
Toshiko Mizokuro ◽  
Kenji Yoneda ◽  
Yoshihiro Todokoro ◽  
Hikaru Kobayashi
Keyword(s):  
Low Temperature ◽  
Electron Impact ◽  
Silicon Oxide ◽  
Nitrogen Plasma ◽  
Low Energy ◽  
Energy Electron ◽  
Oxide Layers ◽  
Low Energy Electron

Nitrogen Plasma Pretreatment of Sapphire Substrates for the GaN Buffer Growth by Remote Plasma Enhanced MOCVD

1996 ◽  
Vol 449 ◽  
Author(s):  
Min Hong Kim ◽  
Cheolsoo Sone ◽  
Jae Hyung Yi ◽  
Soun Ok Heur ◽  
Euijoon Yoon
Keyword(s):  
Low Temperature ◽  
Vapor Deposition ◽  
Nitrogen Plasma ◽  
Layer Growth ◽  
Buffer Layers ◽  
Rf Power ◽  
Remote Plasma ◽  
Sapphire Substrates ◽  
Nucleation Sites ◽  
Plasma Pretreatment

ABSTRACTLow-temperature GaN buffer layers with smooth surfaces and high crystallinity could be prepared by a remote plasma enhanced metalorganic vapor deposition after the pretreatment of substrates with rf nitrogen plasma. Smooth AIN thin layer was formed on the (0001) sapphire substrate by the nitrogen plasma pretreatment for an hour. The AIN layer provided the nucleation sites for the subsequent buffer layer growth, thus highly preferred (0001) GaN buffer layers could be grown on the pretreated substrate. Formation of the AIN layer on sapphire and the surface smoothness were affected by pretreatment parameters such as exposure time, temperature, and rf power.

Nitrogen plasma annealing for low temperature Ta2O5 films

1998 ◽  
Vol 72 (11) ◽  
pp. 1308-1310 ◽  
Author(s):  
G. B. Alers ◽  
R. M. Fleming ◽  
Y. H. Wong ◽  
B. Dennis ◽  
A. Pinczuk ◽  
...  
Keyword(s):  
Low Temperature ◽  
Nitrogen Plasma ◽  
Plasma Annealing

Cu2O thin films obtained at low temperature by mono-ethanolamine decomposition in open atmosphere

2018 ◽  
Vol 85 ◽  
pp. 168-176 ◽  
Author(s):  
M.A. Badillo-Ávila ◽  
R. Castanedo-Pérez ◽  
M.A. Villarreal-Andrade ◽  
G. Torres-Delgado
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Open Atmosphere ◽  
Cu2o Thin Films ◽  
Mono Ethanolamine

An investigation into low-temperature nitrogen plasma environment effect on the content of polyphenols during withering in made Kenyan tea

2013 ◽  
Vol 49 (4) ◽  
pp. 1020-1026 ◽  
Author(s):  
Patrick W. Kuloba ◽  
Lawrence O. Gumbe ◽  
Michael W. Okoth ◽  
Martin Obanda ◽  
Fredrick M. Ng'ang'a
Keyword(s):  
Low Temperature ◽  
Nitrogen Plasma ◽  
Environment Effect ◽  
Plasma Environment

Low-Temperature Metalorganic Chemical Vapor Deposition of Gallium Nitride on (0001) Sapphire Substrates Using a Remote rf Nitrogen Plasma

1996 ◽  
Vol 449 ◽  
Author(s):  
Cheolsoo Sone ◽  
Min Hong Kim ◽  
Jae Hyung Yi ◽  
Soun Ok Heur ◽  
Euijoon Yoon
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nitrogen Plasma ◽  
Structural Quality ◽  
Organic Chemical ◽  
Rf Power ◽  
Sapphire Substrates ◽  
Metal Organic

ABSTRACTWe report the low-temperature growth of GaN layers on (0001) sapphire substrates by a remote plasma enhanced metal-organic chemical vapor deposition in the temperature range of 500 - 800 $C. Effects of process parameters on the growth of GaN were studied. The structural quality of GaN improved as the growth temperature increased and the rf power decreased. Highly oriented GaN layers could be deposited at fairly low temperatures such as 500 $C under low rf power with low growth rate conditions.

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