Atomic Layer Deposition and Thermal Transformations of Thin Titanium–Vanadium Oxide Films

2021 ◽  
Vol 94 (7) ◽  
pp. 890-902
Author(s):  
A. I. Abdulagatov ◽  
A. M. Maksumova ◽  
D. K. Palchaev ◽  
M. Kh. Rabadanov ◽  
I. M. Abdulagatov
Keyword(s):  
Atomic Layer Deposition ◽  
Vanadium Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Thermal Transformations ◽  
Layer Deposition ◽  
Titanium Vanadium ◽  
Vanadium Oxide Films

Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen

2002 ◽  
Vol 92 (10) ◽  
pp. 5698-5703 ◽  
Author(s):  
Kaupo Kukli ◽  
Mikko Ritala ◽  
Jonas Sundqvist ◽  
Jaan Aarik ◽  
Jun Lu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Layer Deposition

Atomic Layer Deposition of Gallium-Doped Zinc Oxide Transparent Conducting Oxide films

2011 ◽  
Vol 1315 ◽  
Author(s):  
Paul R. Chalker ◽  
Paul A. Marshall ◽  
Simon Romani ◽  
Matthew J. Rosseinsky ◽  
Simon Rushworth ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Film Thickness ◽  
Transparent Conducting Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Contactless Measurement ◽  
Zinc Oxide Films ◽  
Transparent Conducting ◽  
Layer Deposition

ABSTRACTThin transparent conducting oxide (TCO) films of gallium-doped zinc oxide have been deposited on glass substrates by atomic layer deposition (ALD) using diethyl zinc, triethyl gallium and water vapour as precursors. The gallium-doped zinc oxide films were deposited over the temperature range 100-350°C. Transmission electron microscopy reveals that the as-deposited films are polycrystalline in character. The electrical resistivity of the gallium-doped zinc oxide films was evaluated using four-point probe and contactless measurement methods as a function of film thickness. The lowest sheet resistance of 16 Ω/☐ was measured from a film thickness of 400nm and a gallium content of 5 atomic percent. The electron Hall mobility of this film was 12.3 cm2/Vs. The visible transmittance of the films was 78% with a haze of 0.2%.

scholarly journals RBS/Channeling Analysis of Zinc Oxide Films Grown at Low Temperature by Atomic Layer Deposition

2013 ◽  
Vol 123 (5) ◽  
pp. 899-903 ◽  
Author(s):  
R. Ratajczak ◽  
A. Stonert ◽  
E. Guziewicz ◽  
S. Gierałtowska ◽  
T.A. Krajewski ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Oxide Films ◽  
Atomic Layer ◽  
Zinc Oxide Films ◽  
Layer Deposition

Stabilization of Mesoporous Iron Oxide Films against Sintering and Phase Transformations via Atomic Layer Deposition of Alumina and Silica

2018 ◽  
Vol 5 (14) ◽  
pp. 1800360 ◽  
Author(s):  
Katrin Kraffert ◽  
Matthias Karg ◽  
Roman Schmack ◽  
Guylhaine Clavel ◽  
Cedric Boissiere ◽  
...  
Keyword(s):  
Iron Oxide ◽  
Atomic Layer Deposition ◽  
Phase Transformations ◽  
Oxide Films ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Iron Oxide Films

scholarly journals Atomic layer deposition of vanadium oxide to reduce parasitic absorption and improve stability in n–i–p perovskite solar cells for tandems

2019 ◽  
Vol 3 (6) ◽  
pp. 1517-1525 ◽  
Author(s):  
James A. Raiford ◽  
Rebecca A. Belisle ◽  
Kevin A. Bush ◽  
Rohit Prasanna ◽  
Axel F. Palmstrom ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Vanadium Oxide ◽  
Perovskite Solar Cells ◽  
Atomic Layer ◽  
Hole Transport ◽  
Layer Deposition ◽  
Improve Stability

ALD vanadium oxide and a low-absorbing hole transport material (HTM) enable semi-transparent perovskite solar cells with high photocurrent and thermal stability.

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