Synthesis and photoluminescence of Si-doped boron carbide nanobelts

Author(s):  
Shaotong Fo ◽  
Zhuo Wang ◽  
Xiaoyong Fan ◽  
wenwen wu

It is of great interest to synthesize boron carbide nanomaterials and to explore their novel properties. We reported the synthesis of belt-like Si doping boron carbide nanomaterials at a low temperature of 1500C with no catalyst. The structures and formation mechanism were investigated. Broad photoluminescence spectra between 400-500 nm were observed under 380nm light excitation. The mechanism of blue shift of as-received samples in comparison with reported boron carbide nanostructured materials was discussed.

2019 ◽  
Vol 5 (10) ◽  
pp. eaay0352 ◽  
Author(s):  
Sisi Xiang ◽  
Luoning Ma ◽  
Bruce Yang ◽  
Yvonne Dieudonne ◽  
George M. Pharr ◽  
...  

Boron carbide suffers from a loss of strength and toughness when subjected to high shear stresses due to amorphization. Here, we report that a small amount of Si doping (~1 atomic %) leads to a substantial decrease in stress-induced amorphization due to a noticeable change of the deformation mechanisms in boron carbide. In the undoped boron carbide, the Berkovich indentation–induced quasi-plasticity is dominated by amorphization and microcracking along the amorphous shear bands. This mechanism resulted in long, distinct, and single-variant shear faults. In contrast, substantial fragmentation with limited amorphization was activated in the Si-doped boron carbide, manifested by the short, diffuse, and multivariant shear faults. Microcracking via fragmentation competed with and subsequently mitigated amorphization. This work highlights the important roles that solute atoms play on the structural stability of boron carbide and opens up new avenues to tune deformation mechanisms of ceramics via doping.


1987 ◽  
Vol 102 ◽  
Author(s):  
Yunosuke Makita ◽  
Masahiko Mori ◽  
Nobukazu Ohnishi ◽  
Paul Phelan ◽  
Takashi Taguchi ◽  
...  

ABSTRACTPhotoluminescence measurements of Be-doped GaAs, grown by molecular beam epitaxy, were carried out at low temperature as a function of acceptor concentration. Results revealed that besides the well-defined emission, [g-g], which is exclusively relevant to acceptor impurities, an additional specific emission, temporarily denoted by [g-g]α is formed near the band-edge, when the concentration of acceptors exceeds 1×1019 cm−3:. From the viewpoint of application it was suggested that also in case of acceptors, photoluminescence spectra can be practically used for the precise determina-tion the acceptor concentration.


2011 ◽  
Vol 10 (04n05) ◽  
pp. 623-627 ◽  
Author(s):  
M. HARIDAS ◽  
L. N. TRIPATHI ◽  
J. K. BASU

Effect of shape and density on the energy transfer between metallic nanoparticles and semi conducting nanostructures was studied by observing the photoluminescence spectra using near field scanning optical microscope. The monolayers of gold nanoparticles, CdSe nanorods and composite with different number ratios were prepared using Langmuir Blodgett method. The spectra collected from the films with different number ratios of CdSe and gold shows a systematic variation of peak position and intensity as a function of number density of CdSe . The photoluminescence spectra collected from composite monolayer is blue shifted compared to the spectra from CdSe nanorods monolayer. Further we observed a blue shift in peak position and reduction emission intensity with respect to increase in the fraction of gold nanoparticles and surface density. We have provided explanation for the observed behavior in terms of strong exciton–plasmon interactions in the compact hybrid monolayers.


2009 ◽  
Vol 35 (5) ◽  
pp. 1877-1882 ◽  
Author(s):  
Bin Zeng ◽  
Zude Feng ◽  
Siwei Li ◽  
Yongsheng Liu ◽  
Laifei Cheng ◽  
...  

1988 ◽  
Vol 144 ◽  
Author(s):  
T. Maed ◽  
T. Ishikawa ◽  
K. Kondo

ABSTRACTWe studied doping Se into AlGaAs layers using PbSe as a dopant source for molecular beam epitaxy (MBE). Good controllability and abruptness equivalent to that of Si-doping were obtained. Se-doping was successfully applied to HEMT structures with reduced DX center concentrations. The two dimensional electron gas (2DEG) characteristics of these structures were comparable to those of Si-doped structures.


2021 ◽  
Vol 70 (19) ◽  
pp. 193601-193601
Author(s):  
Wang Yi ◽  
◽  
Ding Zhao ◽  
Yang Chen ◽  
Luo Zi-Jiang ◽  
...  

2020 ◽  
Author(s):  
H. V. Saritha Devi ◽  
M. S. Swapna ◽  
S SANKARARAMAN

Abstract The development of one-dimensional nanostructures has revolutionized electronic and photonic industries because of their unique properties. The present paper reports the low-temperature green synthesis of boron carbide nanowires, of diameter 14 nm and length 750 nm, by the condensation method using castor oil as the carbon precursor. The nanowires synthesized exhibit beaded chain morphology, and bandgap energy of 2.08 eV revealed through the Tauc plot analysis. The structure of boron carbide nanowires is revealed by Fourier transform infrared spectroscopy and X-ray diffraction analyses. The photoluminescence study reveals the nanowire's blue light emission capability under ultraviolet excitation, which is substantiated by the CIE plot suggesting its potential in photonic applications.


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