THE TEMPERATURE DEPENDENCE OF THE HALF-WIDTHS OF INTERNAL ABSORPTION LINES IN BORON-DOPED SILICON
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For boron-doped silicon at temperatures less than 60 °K, half-width measurements for those absorption peaks corresponding to transitions from the ground state to the 2P′ and 3P′ internal states are presented. These half-widths are attributed to concentration and electron–phonon lifetime effects. The major contribution to the phonon broadening appears to be due to electron–phonon coupling of the internal states to the P3/2 Bloch states.
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1990 ◽
Vol 04
(18)
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pp. 1143-1151
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2020 ◽
Vol 22
(4)
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pp. 2001-2009
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2007 ◽
Vol 21
(23n24)
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pp. 4230-4233
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