Valence band density of states and X-ray photoelectron spectrum of GaS

1978 ◽  
Vol 56 (6) ◽  
pp. 700-703 ◽  
Author(s):  
A. Balzarotti ◽  
R. Girlanda ◽  
V. Grasso ◽  
E. Doni ◽  
F. Antonangeli ◽  
...  
Keyword(s):  
Fine Structure ◽  
Valence Band ◽  
Density Of States ◽  
Photoelectron Spectroscopy ◽  
Photoelectron Spectrum ◽  
Tight Binding ◽  
Single Layer ◽  
Two Dimensional ◽  
X Ray ◽  
Dimensional Approximation

The valence band density of states of GaS has been investigated by X-ray photoelectron spectroscopy and the spectrum has been interpreted on the basis of a single layer tight-binding calculation. Our two-dimensional approximation seems largely appropriate to reproduce the main experimental features of the valence band density of states of GaS, as previously found in the case of InSe. It can also explain to some extent the fine structure in the ultraviolet photoemission spectra recently measured with the synchroton radiation.

Atomic Contribution to Valence Band Density of States in Gallium Oxide and Silicon Oxide Nano Layered Films

2010 ◽  
Vol 297-301 ◽  
pp. 849-852
Author(s):  
Toshio Takeuchi ◽  
Jiro Nishinaga ◽  
Atsushi Kawaharazuka ◽  
Yoshiji Horikoshi
Keyword(s):  
Valence Band ◽  
Density Of States ◽  
Photoelectron Spectroscopy ◽  
Gallium Oxide ◽  
Silicon Oxide ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Analytical Technique ◽  
Sapphire Substrates ◽  
Atomic Contribution

High resolution X-ray photoelectron spectroscopy (XPS) is used to investigate the spectra of nanolayered films. Amorphous gallium oxide (Ga2O3)-silicon dioxide (SiO2) nanolayered thin films are grown using ultrahigh vacuum radio frequency (rf) magnetron sputtering on sapphire substrates at room temperature. Films are layered with 15-angstrom Ga2O3 oxide and 75-angstrom SiO2 for a total of 10 layers. Referring to atomic core levels, atomic contribution to valence band density of states is experimentally nominated. This analytical technique has particular applicability to the evaluation of the density of states with atomic contributions.

Valence Band Alignment of Ultra-Thin SiO2/Si Interfaces As Determined By High Resolution X-Ray Photoelectron Spectroscopy

1995 ◽  
Vol 386 ◽  
Author(s):  
J. L. Alay ◽  
M. Fukuda ◽  
C. H. Bjorkman ◽  
K. Nakagawa ◽  
S. Sasaki ◽  
...  
Keyword(s):  
High Resolution ◽  
Valence Band ◽  
Density Of States ◽  
Photoelectron Spectroscopy ◽  
Oxide Thickness ◽  
Core Level ◽  
Band Alignment ◽  
X Ray ◽  
Charging Effect

ABSTRACTUltra-thin SiO2/Si(111) interfaces have been studied by high resolution x-ray photoelectron spectroscopy. The deconvolution of the Si 2p core-level peak reveals the presence of the suboxide states Si3+ and Si1+ and the nearly complete absence of Si2+. The energy shifts found in the Si 2p and O is core-level peaks arising from charging effects arc carefully corrected. The valence band density of states for ultra-thin (1.8 - 3.7 nm thick) SiO2 is obtained by subtracting the bulk Si contribution from the measured spcctrum and by taking into account the charging effect of SiO2 and bulk Si. Thus obtained valence band alignment of ultra-thin SiO2/Si(111) interfaces is found to be 4.36 ± 0.10 eV regardless of oxide thickness.

Two dimensional Sr silicate grown on Si(001) studied using X-ray Photoelectron Spectroscopy

2006 ◽  
Vol 132 ◽  
pp. 87-90
Author(s):  
M. El Kazzi ◽  
G. Delhaye ◽  
S. Gaillard ◽  
E. Bergignat ◽  
G. Hollinger
Keyword(s):  
Photoelectron Spectroscopy ◽  
Two Dimensional ◽  
X Ray

scholarly journals Probing LaMO3 Metal and Oxygen Partial Density of States Using X-ray Emission, Absorption, and Photoelectron Spectroscopy

2015 ◽  
Vol 119 (4) ◽  
pp. 2063-2072 ◽  
Author(s):  
Wesley T. Hong ◽  
Kelsey A. Stoerzinger ◽  
Brian Moritz ◽  
Thomas P. Devereaux ◽  
Wanli Yang ◽  
...  
Keyword(s):  
Density Of States ◽  
Photoelectron Spectroscopy ◽  
Partial Density ◽  
X Ray ◽  
Partial Density Of States

X-ray photoelectron spectroscopy measurement of n-ZnO/p-NiO heterostructure valence-band offset

2009 ◽  
Vol 94 (2) ◽  
pp. 022108 ◽  
Author(s):  
R. Deng ◽  
B. Yao ◽  
Y. F. Li ◽  
Y. M. Zhao ◽  
B. H. Li ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray ◽  
Spectroscopy Measurement

High Quality GaAs Mis Diodes With Very Low Surface State Density

1990 ◽  
Vol 209 ◽  
Author(s):  
Yoshihisa Fujisaki ◽  
Sumiko Sakai ◽  
Saburo Ataka ◽  
Kenji Shibata
Keyword(s):  
Chemical Vapor Deposition ◽  
Density Of States ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
State Density ◽  
High Quality ◽  
Metal Insulator ◽  
X Ray ◽  
Mis Devices

ABSTRACTHigh quality GaAs/SiO2 MIS( Metal Insulator Semiconductor ) diodes were fabricated using (NH4)2S treatment and photo-assisted CVD( Chemical Vapor Deposition ). The density of states at the GaAs and SiO2 interface is the order of 1011 cm-2eV-1 throughout the forbidden energy range, which is smaller by the order of two than that of the MIS devices made by the conventional CVD process. The mechanism attributable to the interface improvement was investigated through XPS( X-ray Photoelectron Spectroscopy ) analyses.

scholarly journals Valence band offset of InN∕AlN heterojunctions measured by x-ray photoelectron spectroscopy

2007 ◽  
Vol 90 (13) ◽  
pp. 132105 ◽  
Author(s):  
P. D. C. King ◽  
T. D. Veal ◽  
P. H. Jefferson ◽  
C. F. McConville ◽  
T. Wang ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray

Morphology of Silver Thin Films Deposited on TiO2(110) Surfaces

1998 ◽  
Vol 05 (01) ◽  
pp. 387-392 ◽  
Author(s):  
D. Abriou ◽  
D. Gagnot ◽  
J. Jupille ◽  
F. Creuzet
Keyword(s):  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Two Dimensional ◽  
Silver Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Silver Deposits ◽  
Silver Thin Films

The growth mode of silver films deposited at room temperature on TiO 2(110) surfaces has been examined by means of atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) in ultrahigh vacuum (UHV) conditions, On clean vacancy-free TiO 2(110) surfaces, 0.1-nm-thick (on average) Ag deposits form a two-dimensional (2D) layer. When the thickness of the silver overlayer is increased, 3D clusters are shown to appear while the 2D film is preserved, furthermore, the influence of surface oxygen vacancies on the growth of Ag/TiO 2(110) is evidenced by well-characterized differences in the morphology of 9-nm-thick silver deposits.

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