Melting curve of iron up to 3600 kbar by statistical moment method

2022 ◽  
Vol 95 (1) ◽  
Author(s):  
Pham Duy Tan ◽  
Pham Dinh Tam
2012 ◽  
Vol 26 (07) ◽  
pp. 1250050 ◽  
Author(s):  
VU VAN HUNG ◽  
LE DAI THANH

The high-pressure melting curve of semiconductors with defects has been studied using statistical moment method (SMM). In agreement with experiments and with DFT calculations we obtain a negative slope for the high-pressure melting curve. We have derived a new equation for the melting curve of the defect semiconductors. The melting was investigated at different high pressures, and the SMM calculated melting temperature of Si, AlP, AlAs and GaP crystals with defects being in good agreement with previous experiments.


2016 ◽  
Vol 30 (02) ◽  
pp. 1550273 ◽  
Author(s):  
Pham Dinh Tam ◽  
Nguyen Quang Hoc ◽  
Bui Duc Tinh ◽  
Pham Duy Tan

In this paper, the dependence of the melting temperature of metals Cu, Ag and Au under pressure in the interval from 0 kbar to 40 kbar is studied by the statistical moment method (SMM). This dependence has the form of near linearity and the calculated slopes of melting curve are 3.9 for Cu, 5.7 for Ag and 6 for Au. These results are in good agreement with the experimental data.


2020 ◽  
Vol 65 (10) ◽  
pp. 18-23
Author(s):  
Hoc Nguyen Quang ◽  
Loan Pham Thi Thanh ◽  
Viet Nguyen Tuan ◽  
Le Nguyen Ngoc

We build the theory of diffusion for FCC binary interstitial alloy under pressure based on the statistical moment method, where there are the analytic expressions of the jumping frequency of interstitial atom, the effective jumping length, the correlation factor, the diffusion coefficient, and the activated energy. In limit cases, we can obtain the diffusion theory for FCC metal A under pressure.


2018 ◽  
Vol 2018 ◽  
pp. 1-4
Author(s):  
Pham Dinh Tam ◽  
Bui Duc Tinh ◽  
Nguyen Quang Hoc ◽  
Pham Duy Tan

We use the statistical moment method to study the dependence of the critical temperature Tc for Cu3Au on pressure in the interval from 0 to 30 kbar. The calculated mean speed of changing critical temperature to pressure is 1.8 K/kbar. This result is in a good agreement with the experimental data.


2018 ◽  
Vol 28 (2) ◽  
pp. 155
Author(s):  
Dang Thanh Hai ◽  
Vu Van Hung ◽  
Giang Thi Hong

In order to evaluate the effects of vacancies on the melting temperature of AgCe alloy, the statistical moment method was used to find out the analytical expressions to determine the Gibbs free energy in the AB substitution alloy and the expression to calculate the melting temperature of perfect and imperfect AB substitution Alloys. The melting temperature was calculated by the numerical calculation method on the perfect and imperfect AgCe alloy. The calculating results shown that the melting temperature of alloys increase with a increase in pressure. The melting temperatures of imperfect alloy of AgCe, Ag2Ce and Ag3Ce are always slightly lower than that of perfect alloys. Especially, the melting temperatures value of perfect and imperfect alloy were almost the same at high pressure. The melting temperature of alloys increase with an increase in amount of Ag containing in the alloys. The calculated results agreed well with the experimental results at P = 0.


2011 ◽  
Vol 21 (3) ◽  
pp. 245
Author(s):  
Ho Khac Hieu ◽  
Vu Van Hung ◽  
Nguyen Van Hung

Pressure dependence of Extended X-ray Absorption Fine Structure (EXAFS) cumulants of silicon and germanium have been investigated using the statistical moment method (SMM). Analytical expressions of the first and second cumulants of silicon and germanium have been derived. The equations of states for silicon and germanium semiconductors have been also obtained using which the pressure dependence of lattice constants and volume of these semiconductors have been estimated. Numerical results using the developed theories for these semiconductors are found to be in good and reasonable agreement with those of the other theories and with experiment.


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