Quantum Dot Channel (QDC) Field Effect Transistors (FETs) Configured as Floating Gate Nonvolatile Memories (NVMs)

This paper presents quantum dot channel (QDC) Field Effect Transistors (FETs) which are configured as nonvolatile memories (NVMs) by incorporating cladded GeOx-Ge quantum dots in the floating gates as well as the transport channels. The current flow and the threshold characteristics were significantly improved when the gate dielectric was changed from silicon dioxide (SiO2) to hafnium aluminum oxide (HfAlO2), and the control dielectric was changed from silicon nitride (Si3N4) to hafnium aluminum oxide (HfAlO2). The device operations are explained by carrier transport in narrow energy mini-bands which are manifested in a quantum dot transport channel.

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Graphene based field effect transistors for novel nonvolatile memories

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) ◽

10.1109/icsict.2016.7998960 ◽

2016 ◽

Author(s):

Jia-Hui Xie ◽

Youwei Zhang ◽

Qiyuan Wang ◽

Laigui Hu ◽

Pengfei Tian ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Nonvolatile Memories

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Quantum dot field effect transistors

Materials Today ◽

10.1016/j.mattod.2013.08.011 ◽

2013 ◽

Vol 16 (9) ◽

pp. 312-325 ◽

Cited By ~ 144

Author(s):

Frederik Hetsch ◽

Ni Zhao ◽

Stephen V. Kershaw ◽

Andrey L. Rogach

Keyword(s):

Quantum Dot ◽

Field Effect ◽

Field Effect Transistors

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High-Performance, Solution-Processed Quantum Dot Light-Emitting Field-Effect Transistors with a Scandium-Incorporated Indium Oxide Semiconductor

ACS Nano ◽

10.1021/acsnano.8b01094 ◽

2018 ◽

Vol 12 (5) ◽

pp. 4624-4629 ◽

Cited By ~ 14

Author(s):

Penghui He ◽

Congbiao Jiang ◽

Linfeng Lan ◽

Sheng Sun ◽

Yizhi Li ◽

...

Keyword(s):

Quantum Dot ◽

Indium Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Oxide Semiconductor ◽

Solution Processed ◽

Light Emitting

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Simulation of Stacked Quantum Dot Channels SWS-FET Using Multi-FET ABM Modeling

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156419400251 ◽

2019 ◽

Vol 28 (03n04) ◽

pp. 1940025

Author(s):

H. Salama ◽

B. Saman ◽

R. H. Gudlavalleti ◽

P-Y. Chan ◽

R. Mays ◽

...

Keyword(s):

Experimental Data ◽

Quantum Dot ◽

Field Effect ◽

Field Effect Transistors ◽

Simulation Models ◽

Logic Gates ◽

Behavior Model ◽

Analog Behavior

This paper presents simulation of spatial wavefunction switched (SWS) field-effect transistors (FETs) comprising of two vertically stacked quantum dot channels. An analog behavior model (ABM) was used to compare the experimental I-V characteristics of a fabricated QD-SWS-FET. Each channel consists of two quantum dot layers and are connected to the dedicated drains D2 and D1, respectively. The fabricated SWS-FET has one source and one gate. The ABM simulation models SWS-FET comprising of two independent conventional BSIM FETs with their (W/L) ratios, capacitances and other device parameters. The agreement in simulation and experimental data will advance modeling of SWS based adders, logic gates and SRAMs.

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