Graphene based field effect transistors for novel nonvolatile memories

2016 ◽  
Author(s):  
Jia-Hui Xie ◽  
Youwei Zhang ◽  
Qiyuan Wang ◽  
Laigui Hu ◽  
Pengfei Tian ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Nonvolatile Memories

scholarly journals Multiresponsive Nonvolatile Memories Based on Optically Switchable Ferroelectric Organic Field‐Effect Transistors

2021 ◽  
Vol 33 (14) ◽  
pp. 2007965
Author(s):  
Marco Carroli ◽  
Alex G. Dixon ◽  
Martin Herder ◽  
Egon Pavlica ◽  
Stefan Hecht ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Nonvolatile Memories

Quantum Dot Channel (QDC) Field Effect Transistors (FETs) Configured as Floating Gate Nonvolatile Memories (NVMs)

2017 ◽  
Vol 26 (03) ◽  
pp. 1740015
Author(s):  
Jun Kondo ◽  
Murali Lingalugari ◽  
Pial Mirdha ◽  
Pik-Yiu Chan ◽  
Evan Heller ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Aluminum Oxide ◽  
Field Effect ◽  
Carrier Transport ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Transport Channel ◽  
Floating Gates ◽  
Nonvolatile Memories ◽  
Transport Channels

This paper presents quantum dot channel (QDC) Field Effect Transistors (FETs) which are configured as nonvolatile memories (NVMs) by incorporating cladded GeOx-Ge quantum dots in the floating gates as well as the transport channels. The current flow and the threshold characteristics were significantly improved when the gate dielectric was changed from silicon dioxide (SiO2) to hafnium aluminum oxide (HfAlO2), and the control dielectric was changed from silicon nitride (Si3N4) to hafnium aluminum oxide (HfAlO2). The device operations are explained by carrier transport in narrow energy mini-bands which are manifested in a quantum dot transport channel.

scholarly journals Low-voltage polymer field-effect transistors for nonvolatile memories

2005 ◽  
Vol 87 (20) ◽  
pp. 203509 ◽  
Author(s):  
R. C. G. Naber ◽  
B. de Boer ◽  
P. W. M. Blom ◽  
D. M. de Leeuw
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Nonvolatile Memories

Air-Stable n-Channel Organic Single-Crystal Field-Effect Transistors

2008 ◽  
Author(s):  
Takafumi Uemura ◽  
Masakazu Yamagishi ◽  
Yukihiro Tominari ◽  
Jun Takeya
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Crystal Field Effect ◽  
Organic Single Crystal

Organic Three-dimensional Field-effect Transistors

2008 ◽  
Author(s):  
M. Uno ◽  
I. Doi ◽  
K. Takimiya ◽  
Jun Takeya
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Three Dimensional
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