HIGH RESOLUTION PIXE INSTRUMENTATION SURVEY, PART IV

1999 ◽  
Vol 09 (03n04) ◽  
pp. 161-167
Author(s):  
I. TÖRÖK ◽  
M. TERASAWA ◽  
V. P. PETUKHOV
Keyword(s):  
High Resolution ◽  
Elemental Analysis ◽  
Emission Spectra ◽  
Basic Research ◽  
Ion Beams ◽  
X Ray ◽  
Chemical Effects ◽  
Fourth Part ◽  
The World

In this review (in continuations) X-ray crystal spectrometers working on ion beams and their applications are surveyed. The present fourth part continues to describe: (i) their use for elemental analysis; (ii) their use for obtaining the information about the chemical effects in the Particle Induced X-ray Emission spectra; (iii) their use in basic research for obtaining information applied in the above relations and their applications on acelerators. We update the data of formerly discussed systems according to the changes in the world.

Observing the Chemical State of Elements With Z=21 To 28 From L Alpha1 To L L Ratios With Energy Dispersive Spectroscopy (EDS)

1999 ◽  
Vol 5 (S2) ◽  
pp. 590-591
Author(s):  
A. Sandborg ◽  
R. Anderhalt
Keyword(s):  
High Resolution ◽  
Atomic Number ◽  
Energy Dispersive Spectroscopy ◽  
Emission Spectra ◽  
Outer Electron ◽  
Number Range ◽  
X Ray ◽  
Chemical Effects ◽  
Intensity Changes ◽  
Electron Shells

It is well known that chemical bonding affects elemental x-ray emission spectra. The spectra of low atomic number elements show energy shifts which depend on the bonding of the element. To observe these shifts, a high resolution wavelength dispersive (WDS) x-ray spectrometer is required. Intensity variations of the L series can be observed with an EDS system which also show chemical effects.The L Alphal and the L L radiations are produced from a vacancy in the L III shell. Normally the L L line is about 5 to 6% of the intensity of the L Alphal line. However, in the atomic number range of Z=21 to 28, it is easily observed that the L L line becomes more intense. The L Alphal is no longer present at Z=20. These intensity changes are due to the outer electron shells of these atoms being unfilled. The L Alphal comes from the L3-M5 transition, while the L L comes from L3-M1 transition. The M5 (3d level) of the M shell is partially filled for Z=21 to 28; empty for Z<21and full for Z> 28. Holliday observed a Ti LL which was 17% greater than the Ti L Alphal.

scholarly journals Study of ion beam induced chemical effects in silicon with a downsized high resolution X-ray spectrometer for use with focused ion beams

2016 ◽  
Vol 31 (11) ◽  
pp. 2293-2304 ◽  
Author(s):  
I. Božičević Mihalić ◽  
S. Fazinić ◽  
T. Tadić ◽  
D. Cosic ◽  
M. Jakšić
Keyword(s):  
High Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
X Ray ◽  
Chemical Effects ◽  
Ccd Detector

A downsized wavelength dispersive X-ray spectrometer, employing a flat crystal and a CCD detector for use with focused ion beams has been constructed and employed to study ion beam induced chemical effects in Si K X-ray spectra from silicon and its selected compounds.

Nano-probe x-ray analysis and high-resolution imaging on planar defects in high-pressure synthesized infinite-layer superconductor

1994 ◽  
Vol 52 ◽  
pp. 728-729
Author(s):  
Y. Y. Wang ◽  
H. Zhang ◽  
V. P. Dravid ◽  
H. Zhang ◽  
L. D. Marks ◽  
...  
Keyword(s):  
High Pressure ◽  
High Resolution ◽  
Atomic Structure ◽  
Emission Spectra ◽  
High Resolution Electron Microscopy ◽  
Planar Defects ◽  
X Ray ◽  
Infinite Layer ◽  
Resolution Electron ◽  
Resolution Imaging

Azuma et al. observed planar defects in a high pressure synthesized infinitelayer compound (i.e. ACuO2 (A=cation)), which exhibits superconductivity at ~110 K. It was proposed that the defects are cation deficient and that the superconductivity in this material is related to the planar defects. In this report, we present quantitative analysis of the planar defects utilizing nanometer probe xray microanalysis, high resolution electron microscopy, and image simulation to determine the chemical composition and atomic structure of the planar defects. We propose an atomic structure model for the planar defects.Infinite-layer samples with the nominal chemical formula, (Sr1-xCax)yCuO2 (x=0.3; y=0.9,1.0,1.1), were prepared using solid state synthesized low pressure forms of (Sr1-xCax)CuO2 with additions of CuO or (Sr1-xCax)2CuO3, followed by a high pressure treatment.Quantitative x-ray microanalysis, with a 1 nm probe, was performed using a cold field emission gun TEM (Hitachi HF-2000) equipped with an Oxford Pentafet thin-window x-ray detector. The probe was positioned on the planar defects, which has a 0.74 nm width, and x-ray emission spectra from the defects were compared with those obtained from vicinity regions.

HIGH RESOLUTION L X-RAY EMISSION SPECTRA OF Fe AND Cu INDUCED BY O.75 MeV/u ION IMPACT

1995 ◽  
Vol 05 (02n03) ◽  
pp. 203-209 ◽  
Author(s):  
H. KAGEYAMA ◽  
R. TAKAHASHI ◽  
D. HAMAGUCHI ◽  
T. AWATA ◽  
T. NAKAE ◽  
...  
Keyword(s):  
High Resolution ◽  
Lower Energy ◽  
Emission Spectra ◽  
Crystal Spectrometer ◽  
Transition Energies ◽  
X Ray ◽  
The Difference ◽  
Ion Impact ◽  
Electron Vacancy ◽  
Good Agreement

High resolution L x-ray emission spectra of Fe and Cu have been measured by 0.75 MeV/u H and He, and 0.73 MeV/u He, Si and Ar ion impacts with a crystal spectrometer. The x-ray transition energies in the Fe and Cu targets for Lι, Lη, Lα1,2, Lβ1 and Lβ3,4 diagram lines induced by light ion impacts are determined, which are in good agreement with those given in the reference. The difference in L x-ray emission spectra produced by H, He, Si and Ar ions is considered and the emission spectra for the Cu target are compared with the calculated ones based on the multiconfiguration Dirac-Fock method. The origin of the broadening of the Lα1,2 line to the lower energy for Si and Ar ion impacts is attributed to one 2p plus one 3d electron vacancy production.

HIGH RESOLUTION PIXE USING CRYSTAL SPECTROMETER COMBINED WITH POSITION SENSITIVE DETECTORS

1996 ◽  
Vol 06 (01n02) ◽  
pp. 97-116 ◽  
Author(s):  
KUNIKO MAEDA ◽  
HIROMI HAMANAKA ◽  
KEN-ICHI HASEGAWA
Keyword(s):  
High Resolution ◽  
Elemental Analysis ◽  
Chemical State ◽  
Crystal Spectrometer ◽  
X Ray ◽  
Position Sensitive ◽  
Position Sensitive Detectors ◽  
State Analysis

We describe characteristics of high-resolution, wavelength-dispersive crystal spectrometers equipped with a different type of position sensitive X-ray detectors: PSPC, CCD, IP and MCP. Utilities of these position sensitive spectrometers in PIXE experiments are demonstrated by referring several recent topics of elemental analysis, chemical state analysis and a study on sample charging.

Chemical State Analysis using a Gearless Two-Crystal X-Ray Spectrometer

1991 ◽  
Vol 35 (A) ◽  
pp. 393-399
Author(s):  
Tokuzo Konishi ◽  
Kazuo Nishihagi ◽  
Kazuo Taniguchi
Keyword(s):  
High Resolution ◽  
Systematic Study ◽  
Chemical State ◽  
Crystal Spectrometer ◽  
X Ray ◽  
Analyzer Crystal ◽  
Chemical Effects ◽  
Scanning Range ◽  
State Analysis

A two-crystal spectrometer for chemical state analysis by high-resolution x-ray fluorescence spectrometry employs hall-screw and slide mechanisms rather than gears to obtain a 2θ scanning range of 40° -147°; a Δ2θ scanning step of 10−4 deg under vacuus; a 2θ resolution of 10−4 deg in determination of an intercrystal angle with encoder-based measurement; and servomechanical control of position. The spectrometer, although simple in structure, is a powerful instrument for chemical state analysis, as demonstrated by its high resolution, precision, and stability; as demonstrated in the determination of the Kα1 lines of first transition metals with Si(220) as analyzer crystal, and in its application to a systematic study of the chemical effects on Ni Kα1 and Kα2.

Chemical effects on L X-ray intensity ratios of U and Th

2002 ◽  
Vol 80 (8) ◽  
pp. 925-930 ◽  
Author(s):  
A Küçükönder
Keyword(s):  
High Resolution ◽  
Gamma Rays ◽  
Detector System ◽  
X Ray ◽  
Chemical Effects ◽  
Intensity Ratios ◽  
Experimental Values

The chemical effects on the Lβ/Lα, Ll /Lα, and Lγ/Lα X-ray intensity ratios of U and Th were investigated. Vacancies were produced by heavily filtered 241Am gamma rays. A high-resolution Si(Li) detector system was used in the experiments. The experimental values are given with the theoretical values of the pure U and Th elements. PACS Nos.: 32.30Rj

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