scholarly journals Study of ion beam induced chemical effects in silicon with a downsized high resolution X-ray spectrometer for use with focused ion beams

2016 ◽  
Vol 31 (11) ◽  
pp. 2293-2304 ◽  
Author(s):  
I. Božičević Mihalić ◽  
S. Fazinić ◽  
T. Tadić ◽  
D. Cosic ◽  
M. Jakšić
Keyword(s):  
High Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
X Ray ◽  
Chemical Effects ◽  
Ccd Detector

A downsized wavelength dispersive X-ray spectrometer, employing a flat crystal and a CCD detector for use with focused ion beams has been constructed and employed to study ion beam induced chemical effects in Si K X-ray spectra from silicon and its selected compounds.

Recent Advances in The Application of Focused Ion Beams

1985 ◽  
Vol 45 ◽  
Author(s):  
Kenji Gamo ◽  
Susumu Namba
Keyword(s):  
Ion Implantation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Ion Beam Modification ◽  
Chemical Effects ◽  
Recent Advances ◽  
Maskless Patterning

Recent advances of focused ion beam systems and their applications are presented. The applications include maskless ion implantation and various maskless patterning techniques which make use of ion induced chemical effects. These are ion beam assisted etching, deposition and ion beam modification techniques and are promising to improve patterning speed and extend applications of focused ion beams.

HIGH RESOLUTION PIXE INSTRUMENTATION SURVEY, PART IV

1999 ◽  
Vol 09 (03n04) ◽  
pp. 161-167
Author(s):  
I. TÖRÖK ◽  
M. TERASAWA ◽  
V. P. PETUKHOV
Keyword(s):  
High Resolution ◽  
Elemental Analysis ◽  
Emission Spectra ◽  
Basic Research ◽  
Ion Beams ◽  
X Ray ◽  
Chemical Effects ◽  
Fourth Part ◽  
The World

In this review (in continuations) X-ray crystal spectrometers working on ion beams and their applications are surveyed. The present fourth part continues to describe: (i) their use for elemental analysis; (ii) their use for obtaining the information about the chemical effects in the Particle Induced X-ray Emission spectra; (iii) their use in basic research for obtaining information applied in the above relations and their applications on acelerators. We update the data of formerly discussed systems according to the changes in the world.

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

scholarly journals Revealing Inflammatory Indications Induced by Titanium Alloy Wear Debris in Periprosthetic Tissue by Label-Free Correlative High-Resolution Ion, Electron and Optical Microspectroscopy

Materials ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 3048
Author(s):  
Rok Podlipec ◽  
Esther Punzón-Quijorna ◽  
Luka Pirker ◽  
Mitja Kelemen ◽  
Primož Vavpetič ◽  
...  
Keyword(s):  
Titanium Alloy ◽  
High Resolution ◽  
Wear Debris ◽  
Ion Beam ◽  
Quantitative Measure ◽  
Label Free ◽  
Periprosthetic Tissue ◽  
Correlative Microscopy ◽  
X Ray ◽  
Tissue Reactions

The metallic-associated adverse local tissue reactions (ALTR) and events accompanying worn-broken implant materials are still poorly understood on the subcellular and molecular level. Current immunohistochemical techniques lack spatial resolution and chemical sensitivity to investigate causal relations between material and biological response on submicron and even nanoscale. In our study, new insights of titanium alloy debris-tissue interaction were revealed by the implementation of label-free high-resolution correlative microscopy approaches. We have successfully characterized its chemical and biological impact on the periprosthetic tissue obtained at revision surgery of a fractured titanium-alloy modular neck of a patient with hip osteoarthritis. We applied a combination of photon, electron and ion beam micro-spectroscopy techniques, including hybrid optical fluorescence and reflectance micro-spectroscopy, scanning electron microscopy (SEM), Energy-dispersive X-ray Spectroscopy (EDS), helium ion microscopy (HIM) and micro-particle-induced X-ray emission (micro-PIXE). Micron-sized wear debris were found as the main cause of the tissue oxidative stress exhibited through lipopigments accumulation in the nearby lysosome. This may explain the indications of chronic inflammation from prior histologic examination. Furthermore, insights on extensive fretting and corrosion of the debris on nm scale and a quantitative measure of significant Al and V release into the tissue together with hydroxyapatite-like layer formation particularly bound to the regions with the highest Al content were revealed. The functional and structural information obtained at molecular and subcellular level contributes to a better understanding of the macroscopic inflammatory processes observed in the tissue level. The established label-free correlative microscopy approach can efficiently be adopted to study any other clinical cases related to ALTR.

scholarly journals Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams

2013 ◽  
Vol 46 (4) ◽  
pp. 887-892 ◽  
Author(s):  
Genziana Bussone ◽  
Rüdiger Schott ◽  
Andreas Biermanns ◽  
Anton Davydok ◽  
Dirk Reuter ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Lattice Spacing ◽  
Molecular Beam ◽  
Grazing Incidence ◽  
Lattice Parameter ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Nanowires

Grazing-incidence X-ray diffraction measurements on single GaAs nanowires (NWs) grown on a (111)-oriented GaAs substrate by molecular beam epitaxy are reported. The positions of the NWs are intentionally determined by a direct implantation of Au with focused ion beams. This controlled arrangement in combination with a nanofocused X-ray beam allows the in-plane lattice parameter of single NWs to be probed, which is not possible for randomly grown NWs. Reciprocal space maps were collected at different heights along the NW to investigate the crystal structure. Simultaneously, substrate areas with different distances from the Au-implantation spots below the NWs were probed. Around the NWs, the data revealed a 0.4% decrease in the lattice spacing in the substrate compared with the expected unstrained value. This suggests the presence of a compressed region due to Au implantation.

FIB Precise Prototyping and Simulation

2006 ◽  
Vol 960 ◽  
Author(s):  
Philipp M. Nellen ◽  
Victor Callegari ◽  
Juergen Hofmann ◽  
Elmar Platzgummer ◽  
Christof Klein
Keyword(s):  
High Precision ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Fresnel Lenses ◽  
Closed Approach ◽  
Physical Effects

ABSTRACTWe present a closed approach towards direct microstructuring and high precision prototyping with focused ion beams (FIB). The approach uses the simulation of the involved physical effects and the modeling of geometry/topography during milling while the ion beam is steered over the surface. Experimental examples are given including the milling of single spots, trenches, rectangles, and Fresnel lenses. Good agreements between simulations and experiments were obtained. The developed procedures can also be applied to other FIB prototyping examples.

Observing the Chemical State of Elements With Z=21 To 28 From L Alpha1 To L L Ratios With Energy Dispersive Spectroscopy (EDS)

1999 ◽  
Vol 5 (S2) ◽  
pp. 590-591
Author(s):  
A. Sandborg ◽  
R. Anderhalt
Keyword(s):  
High Resolution ◽  
Atomic Number ◽  
Energy Dispersive Spectroscopy ◽  
Emission Spectra ◽  
Outer Electron ◽  
Number Range ◽  
X Ray ◽  
Chemical Effects ◽  
Intensity Changes ◽  
Electron Shells

It is well known that chemical bonding affects elemental x-ray emission spectra. The spectra of low atomic number elements show energy shifts which depend on the bonding of the element. To observe these shifts, a high resolution wavelength dispersive (WDS) x-ray spectrometer is required. Intensity variations of the L series can be observed with an EDS system which also show chemical effects.The L Alphal and the L L radiations are produced from a vacancy in the L III shell. Normally the L L line is about 5 to 6% of the intensity of the L Alphal line. However, in the atomic number range of Z=21 to 28, it is easily observed that the L L line becomes more intense. The L Alphal is no longer present at Z=20. These intensity changes are due to the outer electron shells of these atoms being unfilled. The L Alphal comes from the L3-M5 transition, while the L L comes from L3-M1 transition. The M5 (3d level) of the M shell is partially filled for Z=21 to 28; empty for Z<21and full for Z> 28. Holliday observed a Ti LL which was 17% greater than the Ti L Alphal.

HAXPES beamline PES-BL14 at the Indus-2 synchrotron radiation source

2018 ◽  
Vol 25 (5) ◽  
pp. 1541-1547 ◽  
Author(s):  
Jagannath ◽  
U. K. Goutam ◽  
R. K. Sharma ◽  
J. Singh ◽  
K. Dutta ◽  
...  
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Electron Spectroscopy ◽  
High Energy ◽  
Solid Samples ◽  
Double Crystal ◽  
X Ray ◽  
Double Crystal Monochromator ◽  
Ccd Detector ◽  
Scientific Results

The Hard X-ray Photo-Electron Spectroscopy (HAXPES) beamline (PES-BL14), installed at the 1.5 T bending-magnet port at the Indian synchrotron (Indus-2), is now available to users. The beamline can be used for X-ray photo-emission electron spectroscopy measurements on solid samples. The PES beamline has an excitation energy range from 3 keV to 15 keV for increased bulk sensitivity. An in-house-developed double-crystal monochromator [Si (111)] and a platinum-coated X-ray mirror are used for the beam monochromatization and manipulation, respectively. This beamline is equipped with a high-energy (up to 15 keV) high-resolution (meV) hemispherical analyzer with a microchannel plate and CCD detector system with SpecsLab Prodigy and CasaXPS software. Additional user facilities include a thin-film laboratory for sample preparation and a workstation for on-site data processing. In this article, the design details of the beamline, other facilities and some recent scientific results are described.

Fine Pattern Difinition with Focused Ion Beams and Its Application to X-Ray Mask Fabrication

1984 ◽  
Author(s):  
Toshihiko KANAYAMA ◽  
Masanori KOMURO ◽  
Hiroshi HIROSHIMA ◽  
Tsunehiro OHIRA ◽  
Nobufumi ATODA ◽  
...  
Keyword(s):  
Ion Beams ◽  
Focused Ion Beams ◽  
X Ray ◽  
Fine Pattern ◽  
Mask Fabrication

Ion Beam Assisted Deposition of Metal Organic Films Using Focused Ion Beams

1984 ◽  
Vol 23 (Part 2, No. 1) ◽  
pp. L293-L295 ◽  
Author(s):  
Kenji Gamo ◽  
Nobuyuki Takakura ◽  
Norihiko Samoto ◽  
Ryuichi Shimizu ◽  
Susumu Namba
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Organic Films ◽  
Focused Ion Beams ◽  
Ion Beam Assisted Deposition ◽  
Metal Organic
Sign in / Sign up

Export Citation Format

Share Document