MOSFET AND FRONT-END PROCESS INTEGRATION: SCALING TRENDS, CHALLENGES, AND POTENTIAL SOLUTIONS THROUGH THE END OF THE ROADMAP
2002 ◽
Vol 12
(02)
◽
pp. 267-293
◽
Keyword(s):
High K
◽
The development of advanced MOSFETs for future IC technology generations is discussed from the perspective of the 2001 International Technology Roadmap for Semiconductors (ITRS). Starting from overall chip circuit requirements, MOSFET and front-end process integration technology requirements and scaling trends are discussed, as well as some of the key challenges and potential solutions. These include the use of high-k gate dielectrics, metal-gate electrodes, and perhaps the use of non-classical devices such as double-gate MOSFETs in the later stages of the ITRS.
2007 ◽
Vol 84
(9-10)
◽
pp. 2259-2262
◽
A Hybrid Dry-Wet Approach for Removal of a Dummy Polysilicon Gate in a Replacement Metal Gate Scheme
2012 ◽
Vol 187
◽
pp. 57-60
◽
Keyword(s):
Keyword(s):