scholarly journals On-chip silicon photonic controllable 2 × 2 four-mode waveguide switch

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Cao Dung Truong ◽  
Duy Nguyen Thi Hang ◽  
Hengky Chandrahalim ◽  
Minh Tuan Trinh
Keyword(s):  
High Speed ◽  
Optical Switch ◽  
Optical Signal ◽  
Phase Shifters ◽  
Silicon On Insulator ◽  
Mode Division Multiplexing ◽  
Large Width ◽  
On Chip ◽  
Simultaneous Switching ◽  
20 Nm

AbstractMultimode optical switch is a key component of mode division multiplexing in modern high-speed optical signal processing. In this paper, we introduce for the first time a novel 2 × 2 multimode switch design and demonstrate in the proof-of-concept. The device composes of four Y-multijunctions and 2 × 2 multimode interference coupler using silicon-on-insulator material with four controllable phase shifters. The shifters operate using thermo-optic effects utilizing Ti heaters enabling simultaneous switching of the optical signal between the output ports on four quasi-transverse electric modes with the electric power consumption is in order of 22.5 mW and the switching time is 5.4 µs. The multimode switch exhibits a low insertion loss and a low crosstalk below − 3 dB and − 19 dB, respectively, in 50 nm bandwidth in the third telecom window from 1525 to 1575 nm. With a compact footprint of 10 µm × 960 µm, this device exhibits a relatively large width tolerance of ± 20 nm and a height tolerance of ± 10 nm. Furthermore, the conceptual principle of the proposed multimode switch can be reconfigurable and scalable in multifunctional on-chip mode-division multiplexing optical interconnects.

scholarly journals 2x4 Hybrid MZI-MMI Configuration with MMI Phase-shifters as a High-speed Optical Switch with Low Power Consumption

2019 ◽  
Author(s):  
Boris Niraula ◽  
Conrad Rizal
Keyword(s):  
Power Consumption ◽  
High Speed ◽  
Optical Switching ◽  
Phase Shifter ◽  
Optical Switch ◽  
Cmos Technology ◽  
Phase Shifters ◽  
Silicon On Insulator ◽  
Coupling Loss ◽  
Compact Size

This paper reports 2 × 4 hybrid Mach-zehnder interferometer (MZI) - multi-mode interferometers (MMI) based compact thermo-optical switch consisting of slab waveguides on silicon-on-insulator, SOI, platform. The device consists of two identical MMIs, each of 6 μm wide and 140 μm long connected with two phase shifters MMIs each with 2 μm wide and 8 μm long and linear tappers each 4 μm long, connected at both ends of the MMIs to minimize the power coupling loss. The loss for linear taper is found to be below 0.02dB. The footprint of the whole device is six 6 μm × 324 μm. This structure is based on unique multimode region shape, which leads optical switch to have less coupling loss and reduced cross-talk. The average thermo-optical switching power consumption is 1.4 mW, the excess losses are 0.8 dB, and the imbalances are 0.1 dB. Aluminum is used as a heating pad, and a trench is created around this pad to prevent from spreading of heat and reduce power loss almost by a factor of 2 to the adjacent phase shifter. Our new heating method has advantages of compact size and ease of fabrication with the current CMOS technology.

scholarly journals On-chip optical spatial-domain integrator based on Fourier optics and metasurface

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Chao Chen ◽  
Wei Qi ◽  
Yu Yu ◽  
Xinliang Zhang
Keyword(s):  
High Speed ◽  
Optical Computing ◽  
Optical Signal ◽  
Spatial Domain ◽  
Silicon On Insulator ◽  
Fourier Optics ◽  
Similarity Coefficients ◽  
Ultra Low Power ◽  
Ultra High Speed ◽  
On Chip

Abstract Analog optical computing has been an innovation and research interest in last several years, thanks to the ultra-high speed (potential for real-time processing), ultra-low power consumption and capability of parallel processing. Although great efforts have been made recently, no on-chip optical spatial-domain integrator has been experimentally demonstrated, to the best of our knowledge. Based on Fourier optics and metasurface, we design and fabricate an on-chip optical integrator using silicon-on-insulator (SOI) platform. The proposed integrator is able to integrate the electric field in spatial domain. As a proof-of-concept demonstration, a representative optical signal is well integrated to the desired distribution. Compared with theoretical expectation, the similarity coefficients of the simulated and experimental results are 83 and 78%, respectively. The proposed scheme has potential of performing more complex and ultra-high-speed computing for artificial intelligence.

40 Gb/s High-speed mode-division multiplexing transmission employing NRZ modulation format

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Rabiu Imam Sabitu ◽  
Nafizah Goriman Khan ◽  
Amin Malekmohammadi
Keyword(s):  
System Performance ◽  
High Speed ◽  
Direct Detection ◽  
Signal To Noise Ratio ◽  
Optical Signal ◽  
Threshold Power ◽  
Modulation Format ◽  
Transmission Distance ◽  
Mode Division Multiplexing ◽  
Speed Mode

AbstractThis report examines the performance of a high-speed MDM transmission system supporting four nondegenerate spatial modes at 10 Gb/s. The analysis adopts the NRZ modulation format to evaluate the system performance in terms of a minimum power required (PN) and the nonlinear threshold power (PTH) at a BER of 10−9. The receiver sensitivity, optical signal-to-noise ratio, and the maximum transmission distance were investigated using the direct detection by employing a multimode erbium-doped amplifier (MM-EDFA). It was found that by properly optimizing the MM-EDFA, the system performance can significantly be improved.

DESIGNING OF ALL-OPTICAL TRI-STATE LOGIC SYSTEM WITH THE HELP OF OPTICAL NONLINEAR MATERIAL

2008 ◽  
Vol 17 (03) ◽  
pp. 315-328 ◽  
Author(s):  
TANAY CHATTOPADHYAY ◽  
GOUTAM KUMAR MAITY ◽  
JITENDRA NATH ROY
Keyword(s):  
High Speed ◽  
Optical Switch ◽  
Digital Signal ◽  
Optical Signal ◽  
Nonlinear Material ◽  
Digital Signals ◽  
Photonic Networks ◽  
Optical Nonlinear Material ◽  
All Optical ◽  
Logic Operations

Nonlinear optics has been of increased interest for all-optical signal, data and image processing in high speed photonic networks. The application of multi-valued (nonbinary) digital signals can provide considerable relief in transmission, storage and processing of a large amount of information in digital signal processing. Here, we propose the design of an all-optical system for some basic tri-state logic operations (trinary OR, trinary AND, trinary XOR, Inverter, Truth detector, False detector) which exploits the polarization properties of light. Nonlinear material based optical switch can play an important role. Tri-state logic can play a significant role towards carry and borrow free arithmetic operations. The principles and possibilities of the design of nonlinear material based tri-state logic circuits are proposed and described.

scholarly journals Six-port optical switch for cluster-mesh photonic network-on-chip

Nanophotonics ◽  
2018 ◽  
Vol 7 (5) ◽  
pp. 827-835 ◽  
Author(s):  
Hao Jia ◽  
Ting Zhou ◽  
Yunchou Zhao ◽  
Yuhao Xia ◽  
Jincheng Dai ◽  
...  
Keyword(s):  
High Performance ◽  
Optical Switching ◽  
Optical Switch ◽  
Optical Signal ◽  
Network On Chip ◽  
Transmission Experiment ◽  
Photonic Network ◽  
Benes Network ◽  
On Chip ◽  
Spectral Responses

AbstractPhotonic network-on-chip for high-performance multi-core processors has attracted substantial interest in recent years as it offers a systematic method to meet the demand of large bandwidth, low latency and low power dissipation. In this paper we demonstrate a non-blocking six-port optical switch for cluster-mesh photonic network-on-chip. The architecture is constructed by substituting three optical switching units of typical Spanke-Benes network to optical waveguide crossings. Compared with Spanke-Benes network, the number of optical switching units is reduced by 20%, while the connectivity of routing path is maintained. By this way the footprint and power consumption can be reduced at the expense of sacrificing the network latency performance in some cases. The device is realized by 12 thermally tuned silicon Mach-Zehnder optical switching units. Its theoretical spectral responses are evaluated by establishing a numerical model. The experimental spectral responses are also characterized, which indicates that the optical signal-to-noise ratios of the optical switch are larger than 13.5 dB in the wavelength range from 1525 nm to 1565 nm. Data transmission experiment with the data rate of 32 Gbps is implemented for each optical link.

Integrated Photonic Circuits in Gallium Nitride and Aluminum Nitride

2014 ◽  
Vol 23 (01n02) ◽  
pp. 1450001 ◽  
Author(s):  
Chi Xiong ◽  
Wolfram Pernice ◽  
Carsten Schuck ◽  
Hong X. Tang
Keyword(s):  
High Speed ◽  
Optical Signal ◽  
Silicon Substrates ◽  
Material System ◽  
Group Iii ◽  
Electro Optic ◽  
New Material ◽  
Nanophotonic Circuits ◽  
Group Iii Nitride ◽  
On Chip

Integrated optics is a promising optical platform both for its enabling role in optical interconnects and applications in on-chip optical signal processing. In this paper, we discuss the use of group III-nitride (GaN, AlN) as a new material system for integrated photonics compatible with silicon substrates. Exploiting their inherent second-order nonlinearity we demonstrate and second, third harmonic generation in GaN nanophotonic circuits and high-speed electro-optic modulation in AlN nanophotonic circuits.

High-speed 4x4 optoelectronic switch with on-chip optical signal distribution

1998 ◽  
Author(s):  
Carlos Almeida ◽  
Francois L. Gouin ◽  
Lucie Robitaille ◽  
Claire L. Callender ◽  
Julian P. Noad
Keyword(s):  
High Speed ◽  
Optical Signal ◽  
Signal Distribution ◽  
On Chip ◽  
Optoelectronic Switch

scholarly journals Silicon Integrated Nanophotonic Devices for On-Chip Multi-Mode Interconnects

2020 ◽  
Vol 10 (18) ◽  
pp. 6365
Author(s):  
Hongnan Xu ◽  
Daoxin Dai ◽  
Yaocheng Shi
Keyword(s):  
Large Scale ◽  
Silicon On Insulator ◽  
Nanophotonic Devices ◽  
Mode Division Multiplexing ◽  
Higher Order Modes ◽  
Index Contrast ◽  
High Index Contrast ◽  
On Chip ◽  
Multi Mode ◽  
Development Prospects

Mode-division multiplexing (MDM) technology has drawn tremendous attention for its ability to expand the link capacity within a single-wavelength carrier, paving the way for large-scale on-chip data communications. In the MDM system, the signals are carried by a series of higher-order modes in a multi-mode bus waveguide. Hence, it is essential to develop on-chip mode-handling devices. Silicon-on-insulator (SOI) has been considered as a promising platform to realize MDM since it provides an ultra-high-index contrast and mature fabrication processes. In this paper, we review the recent progresses on silicon integrated nanophotonic devices for MDM applications. We firstly discuss the working principles and device configurations of mode (de)multiplexers. In the second section, we summarize the multi-mode routing devices, including multi-mode bends, multi-mode crossings and multi-mode splitters. The inverse-designed multi-mode devices are then discussed in the third section. We also provide a discussion about the emerging reconfigurable MDM devices in the fourth section. Finally, we offer our outlook of the development prospects for on-chip multi-mode photonics.

Integrated silicon optical switch for high-speed network-on-chip

2020 ◽  
Author(s):  
Ho Duc Tam Linh ◽  
Nguyen Van Quang ◽  
Dao Duy Tu ◽  
Nguyen Van An ◽  
Vuong Quang Phuoc
Keyword(s):  
High Speed ◽  
Optical Switch ◽  
Network On Chip ◽  
High Speed Network ◽  
On Chip

Multimode T-junctions based on truncated Eaton lens

Frequenz ◽  
2020 ◽  
Vol 74 (7-8) ◽  
pp. 271-276
Author(s):  
Seyed Hadi Badri ◽  
Mohsen Mohammadzadeh Gilarlue
Keyword(s):  
Optical Interconnects ◽  
Three Dimensional ◽  
Emerging Technology ◽  
Higher Order ◽  
Silicon On Insulator ◽  
Transmitted Power ◽  
Mode Division Multiplexing ◽  
Higher Order Modes ◽  
On Chip ◽  
Three Dimensional Simulations

AbstractMode-division multiplexing (MDM) in silicon-on-insulator platform is an emerging technology to increase the channel number of a single wavelength carrier by the number of modes and consequently increase the transmission capacity of on-chip optical interconnects. We propose and theoretically demonstrate a multimode branching structure based on the truncated Eaton lens. The proposed T-junctions efficiently convert the higher-order modes into fundamental modes; therefore, they can be potentially employed to manipulate modes in MDM systems. The designed T-junctions are implemented by varying the guiding layer’s thickness on a silicon-on-insulator platform. The three-dimensional simulations verify that the proposed structures can split the TE2 (TE1) mode into the fundamental modes with an average transmitted power of 32% (47%) in a 1550–1600 nm bandwidth.

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