Study of Different Dislocations in YBCO Thin Film

2003 ◽  
Vol 17 (18n20) ◽  
pp. 3530-3533
Author(s):  
S. X. Wang ◽  
W. L. Liu ◽  
S. H. Han ◽  
H. Zhang
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Screw Dislocation ◽  
Threading Dislocations ◽  
Thin Film Sample ◽  
Ybco Thin Film ◽  
Film Sample ◽  
X Ray Diffraction ◽  
X Ray ◽  
Out Of Plane

A series thin film sample of YBCO with different value of Tc was studied by high-resolution X-ray diffraction. Two different threading dislocations, the in-plane twist and the out-of-plane tilt, were studied carefully. It is found that the value of Tc is much more sensitive to the substrate normal tilt than to the in-plane twist. Dislocations with different Burgers vectors are suggested to exert different influence on the value of Tc of the YBCO thin film. The screw dislocation in the film is strongly influences the properties of the YBCO.

scholarly journals In-situ X-ray diffraction combined with scanning AC nanocalorimetry applied to a Fe0.84Ni0.16 thin-film sample

2013 ◽  
Vol 102 (20) ◽  
pp. 201902 ◽  
Author(s):  
John M. Gregoire ◽  
Kechao Xiao ◽  
Patrick J. McCluskey ◽  
Darren Dale ◽  
Gayatri Cuddalorepatta ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Sample ◽  
Film Sample ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals Dislocation Arrangement in a Thick LEO GaN Film on Sapphire

2000 ◽  
Vol 5 (S1) ◽  
pp. 97-103
Author(s):  
Kathleen A. Dunn ◽  
Susan E. Babcock ◽  
Donald S. Stone ◽  
Richard J. Matyi ◽  
Ling Zhang ◽  
...  
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
Threading Dislocations ◽  
X Ray Diffraction ◽  
Burgers Vector ◽  
X Ray ◽  
The Third ◽  
Dislocation Arrangement ◽  
Image Position ◽  
Gan Film

Diffraction-contrast TEM, focused probe electron diffraction, and high-resolution X-ray diffraction were used to characterize the dislocation arrangements in a 16µm thick coalesced GaN film grown by MOVPE LEO. As is commonly observed, the threading dislocations that are duplicated from the template above the window bend toward (0001). At the coalescence plane they bend back to lie along [0001] and thread to the surface. In addition, three other sets of dislocations were observed. The first set consists of a wall of parallel dislocations lying in the coalescence plane and nearly parallel to the substrate, with Burgers vector (b) in the (0001) plane. The second set is comprised of rectangular loops with b = 1/3 [110] (perpendicular to the coalescence boundary) which originate in the coalescence boundary and extend laterally into the film on the (100). The third set of dislocations threads laterally through the film along the [100] bar axis with 1/3<110>-type Burgers vectors These sets result in a dislocation density of ∼109 cm−2. High resolution X-ray reciprocal space maps indicate wing tilt of ∼0.5º.

Study of Dislocation Densities of Thick GaN Films

2014 ◽  
Vol 989-994 ◽  
pp. 387-390
Author(s):  
Yon Gan Li ◽  
Xiang Qian Xiu ◽  
Xue Mei Hua ◽  
Shi Ying Zhang ◽  
Shi Pu Gu ◽  
...  
Keyword(s):  
High Resolution ◽  
Dislocation Density ◽  
Screw Dislocation ◽  
Edge Dislocation ◽  
Thick Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dislocation Densities ◽  
Edge Dislocations

The dislocation density of GaN thick films has been measured by high-resolution X-ray diffraction. The results show that both the edge dislocations and the screw dislocation reduce with increasing the GaN thickness. And the edge dislocations have a larger fraction of the total dislocation densities, and the densities for the edge dislocation with increasing thickness reduce less in contrast with those for the screw dislocation.

Dielectric properties of Ln(Mg1/2Ti1/2)O3 as substrates for high-Tc superconductor thin films

1999 ◽  
Vol 14 (6) ◽  
pp. 2484-2487 ◽  
Author(s):  
Seo-Yong Cho ◽  
Chang-Hun Kim ◽  
Dong-Wan Kim ◽  
Kug Sun Hong ◽  
Jong-Hee Kim
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Room Temperature ◽  
Ybco Thin Film ◽  
X Ray Diffraction ◽  
High Tc ◽  
X Ray ◽  
High Tc Superconductor ◽  
Tan Δ ◽  
Superconductor Thin Films

Ln(Mg1/2Ti1/2)O3 (Ln = Dy, La, Nd, Pr, Sm, Y) compositions have been prepared, and their pertinent properties for use as thin film substrates for YBa2Cu3Ox (YBCO) were measured. X-ray diffraction shows that Ln(Mg1/2Ti1/2)O3 compositions have noncubic symmetry and the GdFeO3-type structure. Dielectric constant measurements revealed values between 22 and 27, which are larger than those of the LnAlO3 family. Quality factor (=1/ tan δ) of the ceramic specimens measured at room temperature was larger than 3000 at 10 GHz. Among the compounds, La(Mg1/2Ti1/2)O3 exhibited the highest dielectric constant and the lowest dielectric loss. Chemical reaction was observed between Ln(Mg1/2Ti1/2)O3 (Ln = Dy, Sm, Y) and YBCO after annealing a 1 : 1 mixture at 950 °C. Considering dielectric and physical properties, La(Mg1/2Ti1/2)O3 and Sm(Mg1/2Ti1/2)O3 were determined to be suitable substrates for YBCO thin film used in microwave applications.

Analysis the Actual Nanostructure of α Phase Polyoctylfluorene Thin Film via Synchrotron Grazing-Incidence X-Ray Diffraction

2013 ◽  
Vol 333-335 ◽  
pp. 1832-1835
Author(s):  
Liu Ran Chen ◽  
Xi Chen ◽  
Ji Cai Liang ◽  
Ji Dong Zhang
Keyword(s):  
Thin Film ◽  
Grazing Incidence ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
One Dimensional ◽  
X Ray ◽  
Α Phase ◽  
Out Of Plane ◽  
Diffraction Signal

The nanostructure of α phase polyoctylfluorene thin film was characterized using normal X-ray diffraction, one-dimensional out-of-plane grazing incidence X-ray diffraction and two-dimensional grazing incidence X-ray diffraction with lab diffractometer and synchrotron diffractometer. The results show that using grazing incidence X-ray diffraction the weak diffraction signal of thin film can be observed after the elimination of background signals. Incorrect (h10) diffraction signals can be collected by lab diffractometer due to its low collimation and resolution, which can be overcome by using synchrotron diffractometer with high collimation and resolution that reveal the actual microstructure of polyoctylfluorene thin film.

Dislocation Arrangement in a Thick LEO GaN Film on Sapphire

1999 ◽  
Vol 595 ◽  
Author(s):  
Kathleen A. Dunn ◽  
Susan E. Babcock ◽  
Donald S. Stone ◽  
Richard J. Matyi ◽  
Ling Zhang ◽  
...  
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
Dislocation Density ◽  
Threading Dislocations ◽  
X Ray Diffraction ◽  
Burgers Vector ◽  
X Ray ◽  
The Third ◽  
Dislocation Arrangement ◽  
Gan Film

AbstractDiffraction-contrast TEM, focused probe electron diffraction, and high-resolution X-ray diffraction were used to characterize the dislocation arrangements in a 16[.proportional]m thick coalesced GaN film grown by MOVPE LEO. As is commonly observed, the threading dislocations that are duplicated from the template above the window bend toward (0001). At the coalescence plane they bend back to lie along [0001] and thread to the surface. In addition, three other sets of dislocations were observed. The first set consists of a wall of parallel dislocations lying in the coalescence plane and nearly parallel to the substrate, with Burgers vector (b) in the (0001) plane. The second set is comprised of rectangular loops with b = 1/3 [11 20] (perpendicular to the coalescence boundary) which originate in the coalescence boundary and extend laterally into the film on the (1 100). The third set of dislocations threads laterally through the film along the [1 100] bar axis with 1/3<11 20>-type Burgers vectors These sets result in a dislocation density of ∼109 cm−2. High resolution X-ray reciprocal space maps indicate wing tilt of ∼0.5°.

Drastic improvement in detection limits in energy dispersive X-ray fluorescence geometry utilizing micro-focused bremsstrahlung excitation in thin-film sample specimen

2021 ◽  
Vol 36 (4) ◽  
pp. 803-812
Author(s):  
Kaushik Sanyal ◽  
Buddhadev Kanrar ◽  
Sangita Dhara
Keyword(s):  
Thin Film ◽  
Detection Limit ◽  
Detection Limits ◽  
Energy Dispersive ◽  
Thin Film Sample ◽  
Film Sample ◽  
X Ray

Lowest detection limit achieved down to 0.4–4 ng mL−1 till date in a lab based XRF instrument.

A curved vacuum deposited thin film sample holder for Seemann-Bohlin diffractometer

1994 ◽  
Vol 209 (6) ◽  
Author(s):  
R. L. Banerjee ◽  
A. Richard
Keyword(s):  
Thin Film ◽  
Maximum Intensity ◽  
Radius Of Curvature ◽  
Thin Film Sample ◽  
Sample Holder ◽  
Film Sample ◽  
X Ray ◽  
Peak Intensity ◽  
Mechanical Linkage

AbstractA sample holder is designed and constructed for the Seemann-Bohlin diffractometer obtained by converting a Siemens horizontal X-ray diffractometer with the help of a mechanical linkage. This sample holder allows one to use a vacuum deposited thin film sample, curved to a radius of curvature equal to that of the diffraction circle. It is found that using a curved sample instead of a flat one increases the peak intensity by about 20% and reduces the profile broadening, measured at half its maximum intensity, from (0.85 ± 0.10)° 4

Hidden thin-film phase of dinaphthothienothiophene revealed by high-resolution X-ray diffraction

2020 ◽  
Vol 13 (9) ◽  
pp. 095505
Author(s):  
Nobutaka Shioya ◽  
Kazuo Eda ◽  
Takafumi Shimoaka ◽  
Takeshi Hasegawa
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray
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