CONSTRUCTION OF SnO2/SiO2/Si HETEROJUNCTION AND ITS LINEUP USING I–V AND C–V MEASUREMENTS

Near-ideal n- SnO 2/n- Si heterojunction band edge lineup has been investigated with aid of I–V and C–V measurements. The heterojunction was manufactured by rapid thermal oxidation of Sn metal films prepared by thermal evaporation technique on monocrystalline n-type silicon. The experimental data of the conduction band offset ΔEc and valence band offset ΔEc were compared with theoretical values. The band offset ΔEc = 0.55 eV and ΔEv = 1.8 eV obtained at 300 K. The energy band diagram of n- SnO 2/n- Si HJ was constructed. C–V measurements depict that the junction was an abrupt type and the built-in voltage was determined from 1/C2–V plot.

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CONSTRUCTION OF ANISOTYPE CdS/Si HETEROJUNCTION AND LINEUP USING I–V AND C–V MEASUREMENTS

Modern Physics Letters B ◽

10.1142/s0217984906012158 ◽

2006 ◽

Vol 20 (28) ◽

pp. 1833-1838 ◽

Cited By ~ 1

Author(s):

RAID A. ISMAIL ◽

ABDUL-MAJEED E. AL-SAMARAI ◽

OMAR A. ABDULRAZAQ

Keyword(s):

Spray Pyrolysis Technique ◽

Energy Band Diagram ◽

Chemical Spray Pyrolysis ◽

Band Offset ◽

Band Diagram ◽

Valence Band Offset ◽

Conduction Band Offset ◽

Chemical Spray Pyrolysis Technique ◽

Chemical Spray ◽

First Time

Near-ideal p-CdS/n-Si heterojunction (HJ) band edge lineup has been investigated for the first time with the aid of I–V and C–V measurements. The heterojunction was obtained by the deposition of CdS films prepared by chemical spray pyrolysis technique (CSP), on the monocrystalline n-type silicon. The experimental data of the conduction band offset, ΔEc and the valence band offset, ΔEc were compared with theoretical values. The band offsets ΔEc=530 meV and ΔEv=770 meV were obtained at 300 K. The energy band diagram of p-CdS/n-Si HJ was constructed. The C–V measurements depicted that the junction was an abrupt type and the built-in voltage was determined from the C-2–V plot.

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Study The Effect of Annealing on Structural and Optical Properties of Indium Selenide (InSe) Thin Films Prepared by Vacuum Thermal Evaporation Technique

Journal of Physics Conference Series ◽

10.1088/1742-6596/1879/3/032058 ◽

2021 ◽

Vol 1879 (3) ◽

pp. 032058

Author(s):

Seham Hassan Salman ◽

M. Ali Sarmad ◽

Ghuzlan Sarhan Ahmed

Keyword(s):

Thin Films ◽

Optical Properties ◽

Thermal Evaporation ◽

Indium Selenide ◽

Thermal Evaporation Technique ◽

Structural And Optical Properties ◽

Vacuum Thermal Evaporation ◽

Evaporation Technique

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Photoelectrochemical response studies of W deposited TiO2nanotubes via thermal evaporation technique

Journal of Experimental Nanoscience ◽

10.1080/17458080.2012.705439 ◽

2012 ◽

Vol 9 (7) ◽

pp. 728-738 ◽

Cited By ~ 3

Author(s):

Chin Wei Lai ◽

Srimala Sreekantan

Keyword(s):

Thermal Evaporation ◽

Thermal Evaporation Technique ◽

Photoelectrochemical Response ◽

Evaporation Technique

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the photoconductive properties of pbxs1-x films

Baghdad Science Journal ◽

10.21123/bsj.3.3.534-539 ◽

2006 ◽

Vol 3 (3) ◽

pp. 534-539

Author(s):

Baghdad Science Journal

Keyword(s):

Room Temperature ◽

Thermal Evaporation ◽

Thermal Evaporation Technique ◽

Quantitative Ratio ◽

Optical Detector ◽

Evaporation Technique

Optical detector was manufactured Bashaddam thermal evaporation technique at room temperature under pressure rays studied characteristics of reactive Scout efficiency quantitative ratio of the signal and the ability equivalent to noise

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Energy band diagram of In2O3/ Si heterojunction

Baghdad Science Journal ◽

10.21123/bsj.8.2.581-587 ◽

2011 ◽

Vol 8 (2) ◽

pp. 581-587

Author(s):

Baghdad Science Journal

Keyword(s):

Energy Band ◽

Energy Band Diagram ◽

Band Diagram ◽

X Ray Diffraction ◽

Flash Evaporation ◽

Tunneling Diode ◽

Conductivity Increase ◽

Hall Effect Measurements ◽

Evaporation Technique ◽

P Type

Crystalline In2O3 Thin films have been prepared by flash evaporation. We have studied the crystal structure of as deposited at 303K and annealed at 523K using X-ray diffraction. The Hall Effect measurements confirmed that electrons were predominant charges in the conduction process (i.e n-type).It is found that the absorption coefficient of the prepared films decreases with increasing Ta. The d.c conductivity study showed that the conductivity increase with increasing Ta , whereas the activation energy decreases with increasing Ta. Also we study the barrier tunneling diode for In2O3/Si heterostructure grown by Flash evaporation technique. (capacitance-voltage C-V) spectroscopy measurements were performed at 303 K and at the annealing temperature 523K. The built in voltage has been determined and it depends strongly on the annealing process of the heterojunction. From all above measurements we assumed an energy band diagram for In2O3 /Si(P-type) heterojunction.

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Growth of ZnS:Ag:Cu Thin Film Deposited on Glass Substrates using Thermal Evaporation Technique for Alpha-photovoltaic

Jurnal Sains Materi Indonesia ◽

10.17146/jsmi.2019.21.1.5656 ◽

2020 ◽

Vol 21 (1) ◽

pp. 8

Author(s):

Emy Mulyani ◽

Tjipto Sujitno ◽

Dessy Purbandari ◽

Ferdiansjah Ferdiansjah ◽

Sayono Sayono

Keyword(s):

Thin Film ◽

Optical Properties ◽

Glass Substrate ◽

Thermal Evaporation ◽

Energy Gap ◽

Thermal Evaporation Technique ◽

Optimal Thickness ◽

Glass Substrates ◽

Evaporation Technique ◽

Deposition Depth

This paper presents the research on the growth of ZnS:Ag:Cu thin film on a glass substrate as a radio-luminescent material. The SRIM/TRIM software is used to determine the optimum thickness based on an energy deposition depth of 5.485 MeV Am 241 alpha radiation source on ZnS:Ag:Cu material. To increase the adhesive strength of the coating, initially, the glass substrate is etched using a plasma glow discharged at 280°C for 15 minutes. Multiple coatings of ZnS:Ag:Cu were etched on the glass substrate; this was carried out using a thermal evaporation technique to achieve the optimal thickness (based on SRIM/TRIM simulation). The thin film thickness was observed using a scanning electron microscope (SEM). The optical properties of the un-etched, etched glass substrate and thin-film were characterized using UV-Vis spectrometer. Based on SRIM/TRIM simulation, the optimal thickness is 22 mm which can be achieved by coating three times. From optical properties of ZnS:Ag:Cu thin film and after being analysed using Taue plot method, it is found that the energy gap of ZnS:Ag:Cu thin film is 2.48 eV. It can be concluded that the addition of Ag and Cu doped decrease the energy gap of ZnS (3.66 eV).

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