INFLUENCE OF FIRING TEMPERATURE ON THE PROPERTIES OF CdO THIN FILMS OBTAINED BY THE SOL-GEL METHOD

CdO thin films were prepared by the sol-gel method, by using a precursor solution with cadmium acetate dihydrate as metal source. The films were obtained on slide-glass substrates and fired in open atmosphere at 200-450°C, at 50°C intervals. The X-ray data show that the films are polycrystalline with a NaCl cubic structure. The transmission of the films is 95-100% at wavelengths ≥600 nm, one of the highest obtained so far for CdO thin films. The atomic force microscopy results show that the grains coalesce, which results in morphology changes as the firing temperature increases. The resistivity showed its minimum value around 300°C (~10-3 Ω-cm).

Download Full-text

Microstructural, Optical and Electrical Properties of ZnO:Sn Thin Films Deposited by Sol-Gel Method

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.652-654.519 ◽

2013 ◽

Vol 652-654 ◽

pp. 519-522

Author(s):

Jun Chen ◽

Yue Hui Hu ◽

Hong Hao Hu ◽

Yi Chuan Chen

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Sol Gel ◽

Hexagonal Structure ◽

Optical And Electrical Properties ◽

Axis Orientation ◽

Gel Method ◽

Sol Gel Method ◽

Sn Doping ◽

Glass Substrates

Transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto silica glass substrates by the sol–gel method. The effect of different Sn doping on the crystallinity, structural, optical and electrical properties of ZnO:Sn thin films were investigated by XRD, SEM, UV-VIS spectrophotometer and four-point probe method respectively. Among all of ZnO:Sn thin films in this paper, Sn-doped with 2 at.% exhibited the best properties, the surface demonstrate an accumulative crystallization and hexagonal structure, with a high-preferential c-axis orientation, namely an average transmittance of 90% and the resistivity of 19.6 Ω·cm.

Download Full-text

Revisit of Phase Transformation Kinetics in PZT Thin Films by Sol-Gel Method Using Scanning Force Microscopy

Integrated Ferroelectrics ◽

10.1080/10584580490896580 ◽

2004 ◽

Vol 68 (1) ◽

pp. 247-258 ◽

Cited By ~ 4

Author(s):

BONGKI LEE ◽

CHANHYUNG KIM ◽

SEUNG-HYUN KIM ◽

HYUNJUNG SHIN

Keyword(s):

Thin Films ◽

Phase Transformation ◽

Sol Gel ◽

Scanning Force Microscopy ◽

Transformation Kinetics ◽

Pzt Thin Films ◽

Gel Method ◽

Sol Gel Method ◽

Force Microscopy ◽

Scanning Force

Download Full-text

Structural and Optical Properties of Nickel-Doped and Undoped Zinc Oxide Thin Films Deposited by Sol-Gel Method

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.895.250 ◽

2014 ◽

Vol 895 ◽

pp. 250-253 ◽

Cited By ~ 2

Author(s):

Siti Hajar Basri ◽

Mohd Arif Mohd Sarjidan ◽

Wan Haliza Abd Majid

Keyword(s):

Thin Films ◽

Zinc Acetate ◽

Zinc Acetate Dihydrate ◽

Sol Gel ◽

Chelating Agent ◽

Zno Films ◽

Ni Doping ◽

Gel Method ◽

Sol Gel Method ◽

Glass Substrates

ZnO thin films with and without Ni-doping were successfully deposited by sol-gel method with zinc acetate dihydrate as inorganic precursor, and nickel (II) acetate tetrahydrate as dopant. The solutions were prepared by dissolving zinc acetate and nickel (II) acetate in ethanol and diethanolamine (DEA) as its chelating agent. Thin films were fabricated by using spin-coating method on glass substrates. ZnO films were obtained by pre-heating and post-heating at 300 °C for 10 minutes and 500 °C for 1 h respectively. The films were analyzed by X-ray diffraction (XRD), UV-Vis transmittance and photoluminescence (PL). All samples exhibit high transparency in visible. Ni dopant does not alter so much ZnO structure, which due to the ion substitution between Ni and Zn. However, the Ni tends to create a dopant energy interlayer in ZnO energy band gap which cause significant change in PL intensity.

Download Full-text

The Dielectric Tunability of Fe-Doped Pb0.3Sr0.7TiO3 Thin Films Prepared by Sol-Gel Method

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.399-401.958 ◽

2011 ◽

Vol 399-401 ◽

pp. 958-962

Author(s):

Xiao Hua Sun ◽

Shuang Hou ◽

Xiu Leng Li ◽

Tian You Peng ◽

Xing Zhong Zhao

Keyword(s):

Thin Films ◽

Dielectric Constant ◽

Dielectric Loss ◽

Sol Gel ◽

Gel Method ◽

Sol Gel Method ◽

Force Microscopy ◽

Si Substrates ◽

Fe Content ◽

Metal Insulator Metal

Fe-doped Pb0.3Sr0.7TiO3 (PST) thin films have been fabricated on Pt/Ti/SiO2/Si substrates with sol–gel method. The structure and surface morphology of Fe-doped PST thin films were investigated as a function of Fe concentration by x-ray diffraction (XRD) and atomic force microscopy (AFM). The dielectric measurements were conducted on metal-insulator-metal capacitors at the frequency from 100 Hz to 1M Hz at room temperature. It’s found that the dielectric constant, dielectric loss and tunability of Fe-doped PST films decreased with the increase of Fe content. The effects of Fe doping on the microstructure, dielectric and tunable properties of thin films were analyzed. Though the undoped PST thin film exhibited the highest dielectric constant of 2011 and the largest tunability of 76%, the 6 mol% Fe doped PST thin films had the highest figure of merit (FOM) of 17.9 for its lowest dielectric loss.

Download Full-text

Effect of Molar Concentration on Electrically Resistive Lead Titanate Thin Films by Simple Sol-Gel Method

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.832.379 ◽

2013 ◽

Vol 832 ◽

pp. 379-383 ◽

Cited By ~ 4

Author(s):

Nurbaya Zainal ◽

Habibah Zulkefle ◽

Mohamad Rusop

Keyword(s):

Thin Films ◽

Lead Titanate ◽

Sol Gel ◽

Physical Property ◽

Molar Concentration ◽

Solar Simulator ◽

Gel Method ◽

Sol Gel Method ◽

Force Microscopy ◽

Atomic Force

Lead titanate thin films were successfully prepared using a simple sol-gel method. In the present study extra Pb excess was not taken into consideration in such a way that the ratio of Pb:Ti is 1:1. Different molar concentration (0.1, 0.2, 0.3, 0.4, and 0.5) involved in this study and it was found that the solutions increased in acidic level by the increment of molar concentration that being measured by pH and conductivity meter (JENWAY-3540). It also indicated that the solutions were electrically resistive at low concentration which might due to the existence of lead and oxygen ionic bonding. The solutions were then deposited onto cleaned glass substrate by spin coating technique indeed to have better thin film homogeneity at room temperature. The prepared thin films were characterized on electrical property considering the resistivity measured by solar simulator (BUKOH KEIKI EP-2000). After that structural and physical property of thin films were observed by atomic force microscopy (Park System, XE-100).

Download Full-text

Fabrication and Characterization of MgAl2O4 Thin Films by Sol-Gel Method

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.216.514 ◽

2011 ◽

Vol 216 ◽

pp. 514-517 ◽

Cited By ~ 1

Author(s):

Cheng Hsing Hsu ◽

Jenn Sen Lin ◽

His Wen Yang

Keyword(s):

Thin Films ◽

Sol Gel ◽

Annealing Treatment ◽

Annealed Film ◽

Gel Method ◽

Sol Gel Method ◽

Force Microscopy ◽

Microstructure Characteristics ◽

Atomic Force ◽

Surface Morphologies

This paper describes microstructure characteristics of MgAl2O4 thin films were deposited by sol-gel method with various annealing temperatures. Particular attention will be paid to the effects of an annealing treatment in air ambient on the physical properties. The annealed films were characterized using X-ray diffraction. The surface morphologies of annealed film were examined by scanning electron microscopy and atomic force microscopy. The dependence of the dielectric properties and microstructure characteristics on annealing temperature was also investigated.

Download Full-text