PREPARATION AND CHARACTERIZATION OF MnSi1.7 THIN FILMS
2002 ◽
Vol 16
(15n16)
◽
pp. 583-588
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Keyword(s):
X Ray
◽
MnSi 1.7 films were prepared by Solid Phase Reaction on Si(100) substrates under UHV conditions. Auger Electron Spectroscopy (AES) and X-ray diffraction (XRD) were used to study the composition and the structure of the MnSi x films. Compared with the reactive-deposited MnSi 1.7 films on silicon substrates, severe diffusion of manganese atoms into the silicon substrate during the thermal annealing process was observed. If the annealing process was not long enough, the phenomenon of coexistence of manganese-rich and silicon-rich silicides was found. The electrical resistivity of MnSi 1.7 films was measured in the temperature range of 30°C to 450°C. The resistivity increases gradually with temperature in the temperature range measured.
Keyword(s):
2016 ◽
Vol 698
◽
pp. 8-12
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2004 ◽
Vol 19
(7)
◽
pp. 2137-2143
◽