Effects of Mn doping on electrical properties of ZnO thin films

2016 ◽  
Vol 30 (04) ◽  
pp. 1650024 ◽  
Author(s):  
Leili Motevalizadeh ◽  
Boshra Ghanbari Shohany ◽  
Majid Ebrahimizadeh Abrishami
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Spray Pyrolysis Technique ◽  
Oxygen Deficiency ◽  
Zno Thin Films ◽  
Zno Films ◽  
Mn Doping ◽  
X Ray ◽  
Vis Spectroscopy ◽  
Mn Doped

In this paper, we have investigated the effect of Mn doping on the electrical properties of ZnO thin films. ZnO thin films with different amounts of Mn concentrations (0, 5, 10 and 15 mol.%) were prepared by spray pyrolysis technique. The crystal structure was examined by X-ray diffraction (XRD) analysis. XRD patterns showed that all the samples were crystallized in wurtzite structure while a decrease in crystallinity and switch in preferential orientations were observed in Mn-doped thin films comparing to undoped ZnO. The element composition of all thin films was detected by energy dispersive X-ray (EDX). The surface morphology of the films was investigated using field emission scanning electron microscope (FESEM) and optical properties were studied using UV-vis spectroscopy. UV-vis study revealed that the band gap blueshifts with the increase in Mn content and [Formula: see text] increases with the increase in Mn concentration. The resistivity and activation energy were measured at room temperature and ranging from 373 K to 573 K. Comparing to undoped ZnO thin film, the resistivity of Mn-doped ZnO films increased because of different parameters such as increasing barrier height energy and reducing the oxygen deficiency.

scholarly journals Influence of Annealing on Properties of Spray Deposited ZnO Thin Films

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Kalyani Nadarajah ◽  
Ching Yern Chee ◽  
Chou Yong Tan
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Spray Pyrolysis Technique ◽  
Hexagonal Wurtzite Structure ◽  
Ambient Air ◽  
Zno Thin Films ◽  
Visible Range ◽  
X Ray ◽  
Average Grain Size ◽  
Vis Spectroscopy

Zinc Oxide (ZnO) thin films were deposited on glass substrates via the spray pyrolysis technique. The films were subsequently annealed in ambient air from 300°C to 500°C. The morphology and structural properties of the thin films were studied by field emission scanning electron microscope (FESEM), atomic force microscopy (AFM), and X-ray diffractometry (XRD) techniques. Electrical resistivity of the thin films was measured using a data acquisition unit. The optical properties of the films were characterized by UV-vis spectroscopy and photoluminescence (PL) technique. X-ray diffraction data showed that the films were grown in the (002) direction with a hexagonal wurtzite structure. The average grain size ranged from 15 to 27 nm. Increasing annealing temperatures resulted in larger grain sizes and higher crystallinity, with the surface roughness of annealed films being more than twice if compared to unannealed film. The electrical resistivity of the films decreased with the increasing annealing temperature. The UV and visible band emissions were observed in the photoluminescence spectra, due to exciton and defect-related emissions, respectively. The transmission values of the films were as high as 90% within the visible range (400–700 nm).

Role of Dipping Cycle on Mn Doped ZnO Thin Films Prepared by Successive Ionic Layer Adsorption and Reaction Method

2019 ◽  
Vol 17 (12) ◽  
pp. 987-990
Author(s):  
K. Rathi Devi ◽  
G. Selvan ◽  
M. Karunakaran ◽  
G. Rajesh Kanna ◽  
K. Kasirajan
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Structural Parameters ◽  
Hexagonal Structure ◽  
Zno Thin Films ◽  
Zno Films ◽  
Line Profile Analysis ◽  
X Ray ◽  
Doped Zno ◽  
Mn Doped

In this work, Mn doped Zinc Oxide (ZnO) thin films were coated onto glass substrates by low cost SILAR technique by altering dipping cycle such as 40, 60, 80 and 100. The film thickness was estimated using weight gain method and it revealed that the film thickness increased with dipping cycle. The structural, morphological, elemental and FTIR properties of the coated Mn doped ZnO films were studied using X-ray diffraction (XRD), scanning electron microscope (SEM), EDAX and FTIR spectrophotometer respectively. The prepared films were found to be hexagonal structure with polycrystalline in nature with preferential orientation along (002) plane. X-ray line profile analysis was used to evaluate the micro structural parameters. The crystallite size values are increased with increase of dipping cycle. Morphological results showed that the dipping cycle has a marked effect on morphology of the prepared Mn doped ZnO thin films. EDAX studies showed that the presence of Zinc, Oxygen and Mn content.

Bandgap tuning in ZnO thin films and enhanced n-type properties through Mn doping synthesized by a simple spray pyrolysis

2021 ◽  
pp. 2150155
Author(s):  
Md. Khorshed Alam ◽  
Mehnaz Sharmin ◽  
Jiban Podder
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Room Temperature ◽  
Visible Region ◽  
Zno Thin Films ◽  
Bandgap Energy ◽  
Chemical Compositions ◽  
Mn Doping ◽  
X Ray ◽  
Mn Doped

Undoped and manganese (Mn)-doped zinc oxide (ZnO) thin films have been deposited onto glass substrates at 300[Formula: see text]C using a low cost spray pyrolysis technique. Structural, optical and electrical properties of the as-deposited films have been investigated. Scanning electron microscopy images show the existence of clusters with well-defined nucleation centers consisting of highly dense ganglia-like fibers over a large area around the nucleation center. Chemical compositions of the ZnO and Mn-doped ZnO thin films are studied by using energy dispersive X-ray (EDX) analysis. X-ray diffraction spectra depict that the films have polycrystalline wurtzite structure. The average crystallite sizes are calculated in the range of 8–16 nm by Williamson–Hall method and found in good agreement with Scherer method. Optical transmittance of the films is about 80% in the visible region. Bandgap energy is tuned to 2.83 eV from 3.10 eV with increasing Mn doping. Electrical resistivity at room-temperature decreases significantly with increasing Mn doping as well as increasing temperature from 300–440 K. The activation energies in the temperature ranges 300–350 K and 350–440 K are found to be in the range of 0.25–0.16 eV and 0.35–0.59 eV, respectively. Hall Effect measurements show that the thin films have negative Hall co-efficient indicating [Formula: see text]-type conductivity at room-temperature. Carrier concentration is found to be of the order of 10[Formula: see text] cm[Formula: see text].

Band gap tuning and p to n-type transition in Mn-doped CuO nanostructured thin films

2022 ◽  
Vol 43 (1) ◽  
pp. 012801
Author(s):  
R. Rahaman ◽  
M. Sharmin ◽  
J. Podder
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Spray Pyrolysis Technique ◽  
Band Gap Energy ◽  
Dielectric Constants ◽  
X Rays ◽  
Electron Effective Mass ◽  
Mn Doping ◽  
Type Transition ◽  
Mn Doped

Abstract Here we discuss the synthesis of copper (II) oxide (CuO) and manganese (Mn)-doped CuO thin films varying with 0 to 8 at% Mn using the spray pyrolysis technique. As-deposited film surfaces comprised of agglomerated spherical nanoparticles and a semi-spongy porous structure for 4 at% Mn doping. Energy dispersive analysis of X-rays confirmed the chemical composition of the films. X-ray diffraction spectra showed a polycrystalline monoclinic structure with the predominance of the ( 11) peak. Optical band gap energy for direct and indirect transitions was estimated in the ranges from 2.67–2.90 eV and 0.11–1.73 eV, respectively. Refractive index and static dielectric constants were computed from the optical spectra. Electrical resistivity of CuO and Mn-doped CuO (Mn:CuO) thin films was found in the range from 10.5 to 28.6 Ω·cm. The tiniest electron effective mass was calculated for 4 at% Mn:CuO thin films. P to n-type transition was observed for 4 at% Mn doping in CuO films. Carrier concentration and mobility were found in the orders of 1017 cm–3 and 10–1 cm2/(V·s), respectively. The Hall coefficient was found to be between 9.9 and 29.8 cm3/C. The above results suggest the suitability of Mn:CuO thin films in optoelectronic applications.

Effect of aluminium doping concentration on microstructures, optical and electrical properties of ZnO thin films by spray pyrolysis technique

2018 ◽  
Vol 5 (3) ◽  
pp. 9519-9524 ◽  
Author(s):  
Worapot Sripianem ◽  
Alichapat Chuchuay ◽  
Pitcha Kiatthanabumrung ◽  
Natthida Saengow ◽  
Thanate Na Wichean ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Spray Pyrolysis ◽  
Doping Concentration ◽  
Spray Pyrolysis Technique ◽  
Zno Thin Films ◽  
Optical And Electrical Properties ◽  
Aluminium Doping

scholarly journals EPR Spectroscopy of Different Sol Concentration Synthesized Nanocrystalline-ZnO Thin Films

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Manju Arora ◽  
Rayees A. Zargar ◽  
S. D. Khan
Keyword(s):  
Thin Films ◽  
Oxygen Vacancies ◽  
Film Surface ◽  
Epr Spectra ◽  
Zno Thin Films ◽  
Zno Films ◽  
Zno Film ◽  
Resonance Signal ◽  
X Ray ◽  
Impurity Defects

Nanocrystalline zinc oxide (nc-ZnO) thin films were grown on p-type silicon substrate through spin coating by sol-gel process using different sol concentrations (10 wt.%, 15 wt.%, and 25 wt.%). These films were characterized by high resolution nondestructive X-ray diffraction (XRD), scanning electron microscopy (SEM) with energy dispersive X-ray analysis (EDS) attachment, and electron paramagnetic resonance (EPR) techniques to understand variations in structural, morphological, and oxygen vacancy with respect to sol concentration. The film surface morphology changes from nanowall to nanorods on increasing sol concentration. EPR spectra revealed the systematic variation from ferromagnetic to paramagnetic nature in these nc-ZnO films. The broad EPR resonance signal arising from the strong dipolar-dipolar interactions among impurity defects present in nc-ZnO film deposited from 10 wt.% sol has been observed and a single strong narrow resonance signal pertaining to oxygen vacancies is obtained in 25 wt.% sol derived nc-ZnO film. The concentrations of impurity defects and oxygen vacancies are evaluated from EPR spectra, necessary for efficient optoelectronic devices development.

Effect of Flexible Substrates on the Structural and Optical Properties of ZnO Films Deposited by Sputtering Method

2015 ◽  
Vol 1107 ◽  
pp. 678-683 ◽  
Author(s):  
Lam Mui Li ◽  
Azmizam Manie Mani ◽  
Saafie Salleh ◽  
Afishah Alias
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Low Cost ◽  
Argon Plasma ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Plastic Substrate ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray

Zinc Oxide (ZnO) has attracted much attention because of its high optical transmittance approximately ~80 % with a wide band gap of (3.3 eV at 300 K) and a relatively low cost material. ZnO thin films were deposited on plastic substrate using RF powered magnetron sputtering method. The target used is ZnO disk with 99.99 % purity. The sputtering processes are carried out with argon gas that flow from 10-15 sccm. Argon is used to sputter the ZnO target because the ability of argon that can remove ZnO layer effectively by sputtering with argon plasma bombardment. The deposited ZnO thin films are characterized using X-Ray Diffraction (XRD) and UV-Vis Spectrometer. The analysis of X-ray diffraction show that good crystalline quality occurs at nominal thickness of 400 nm. The optical studies showed that all the thin films have high average transmittance of approximately 80 % and the estimated value of optical band gap is within 3.1 eV-3.3 eV range.

ZnO Films Deposited on Various Diamond Film Substrates with Different Surface Roughness

2011 ◽  
Vol 287-290 ◽  
pp. 2347-2350
Author(s):  
Rong Fan ◽  
Lin Jun Wang ◽  
Jian Huang ◽  
Ke Tang ◽  
Ji Jun Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Diamond Film ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Free Standing ◽  
Axis Orientation ◽  
X Ray ◽  
Force Microscopy

ZnO thin films were deposited by radio frequency (R. F.) magnetron sputtering on various diamond film substrates with different surface roughness. The influence of surface roughness on structural properties and surface morphology of ZnO thin films was investigated by X-ray diffraction (XRD) and atom force microscopy (AFM), respectively. Only on the nanocrystalline and free-standing diamond substrates, ZnO films with preferential c-axis orientation and smooth surface were obtained.

scholarly journals Growth of Zn1−x CdxO nanocrystalline thin films by sol-gel method and their characterization for optoelectronic applications

2014 ◽  
Vol 32 (4) ◽  
pp. 688-695 ◽  
Author(s):  
Munirah Munirah ◽  
Ziaul Khan ◽  
Mohd. Khan ◽  
Anver Aziz
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Visible Region ◽  
Zno Thin Films ◽  
Band Edge Emission ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cd Doping ◽  
Vis Spectroscopy ◽  
Doped Zno

AbstractThis paper describes the growth of Cd doped ZnO thin films on a glass substrate via sol-gel spin coating technique. The effect of Cd doping on ZnO thin films was investigated using X-ray diffraction (XRD), UV-Vis spectroscopy, photoluminescence spectroscopy, I–V characteristics and field emission scanning electron microscopy (FESEM). X-ray diffraction patterns showed that the films have preferred orientation along (002) plane with hexagonal wurtzite structure. The average crystallite sizes decreased from 24 nm to 9 nm, upon increasing of Cd doping. The films transmittance was found to be very high (92 to 95 %) in the visible region of solar spectrum. The optical band gap of ZnO and Cd doped ZnO thin films was calculated using the transmittance spectra and was found to be in the range of 3.30 to 2.77 eV. On increasing Cd concentration in ZnO binary system, the absorption edge of the films showed the red shifting. Photoluminescence spectra of the films showed the characteristic band edge emission centred over 377 to 448 nm. Electrical characterization revealed that the films had semiconducting and light sensitive behaviour.

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