Role of Dipping Cycle on Mn Doped ZnO Thin Films Prepared by Successive Ionic Layer Adsorption and Reaction Method

2019 ◽  
Vol 17 (12) ◽  
pp. 987-990
Author(s):  
K. Rathi Devi ◽  
G. Selvan ◽  
M. Karunakaran ◽  
G. Rajesh Kanna ◽  
K. Kasirajan
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Structural Parameters ◽  
Hexagonal Structure ◽  
Zno Thin Films ◽  
Zno Films ◽  
Line Profile Analysis ◽  
X Ray ◽  
Doped Zno ◽  
Mn Doped

In this work, Mn doped Zinc Oxide (ZnO) thin films were coated onto glass substrates by low cost SILAR technique by altering dipping cycle such as 40, 60, 80 and 100. The film thickness was estimated using weight gain method and it revealed that the film thickness increased with dipping cycle. The structural, morphological, elemental and FTIR properties of the coated Mn doped ZnO films were studied using X-ray diffraction (XRD), scanning electron microscope (SEM), EDAX and FTIR spectrophotometer respectively. The prepared films were found to be hexagonal structure with polycrystalline in nature with preferential orientation along (002) plane. X-ray line profile analysis was used to evaluate the micro structural parameters. The crystallite size values are increased with increase of dipping cycle. Morphological results showed that the dipping cycle has a marked effect on morphology of the prepared Mn doped ZnO thin films. EDAX studies showed that the presence of Zinc, Oxygen and Mn content.

Soft X-ray Emission Spectra of Mn-doped ZnO Thin Films

2012 ◽  
Vol 27 (3) ◽  
pp. 296-300
Author(s):  
Jing JIN ◽  
Xin-Yi ZHANG ◽  
Ying-Xue ZHOU
Keyword(s):  
Thin Films ◽  
Emission Spectra ◽  
Zno Thin Films ◽  
X Ray ◽  
Doped Zno ◽  
Mn Doped

Effect of Ruthenium Concentration on Structural and I-V Characteristics of ZnO Thin Films by Sol–Gel Method

2017 ◽  
Vol 05 (01) ◽  
pp. 1750004
Author(s):  
R. Vettumperumal ◽  
S. Kalyanaraman ◽  
R. Thangavel
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Gel Method ◽  
X Ray ◽  
Sol Gel Method ◽  
Doped Zno

Nanocrystalline ruthenium (Ru)-doped ZnO thin films on sapphire substrate was prepared using sol–gel method by spin coating technique. The structural and I-V characteristics of Ru doped ZnO thin films were studied from the X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM) analysis and Raman spectroscopy. X-ray diffraction (XRD) results revealed that the deposited films belonged to hexagonal wurtzite structure with c-axis orientation. It is also confirmed from the Raman spectra. Enhancement of longitudinal optical (LO) phonon is observed by the strong electron–phonon interaction. An observed increment in sheet resistance with increase in dopant percentage of Ru (1–2[Formula: see text]mol%) in ZnO films was found and better I-V characteristic behavior was observed at 1[Formula: see text]mol% of Ru-doped ZnO thin films. Trap limited current flow inside the material was calculated from the log I versus log V plot in the higher voltage region.

X-ray Absorption and Emission Studies of Mn-doped ZnO Thin Films

2009 ◽  
Vol 55 (1) ◽  
pp. 177-182 ◽  
Author(s):  
P. Thakur ◽  
S. Gautam ◽  
K.H. Chae ◽  
M. Subramanain ◽  
R. Jayavel ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Absorption And Emission ◽  
X Ray ◽  
Doped Zno ◽  
X Ray Absorption ◽  
Emission Studies ◽  
Mn Doped

Influence of growth conditions on the physical properties of Mn doped ZnO thin films grown by reactive magnetron sputtering

2015 ◽  
Vol 1805 ◽  
Author(s):  
Adrian Camacho-Berrios ◽  
Victor Pantojas ◽  
Wilfredo Otaño
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetron Sputtering ◽  
Crystallite Size ◽  
Rf Sputtering ◽  
Growth Conditions ◽  
Zno Thin Films ◽  
Zno Films ◽  
Doped Zno ◽  
Mn Doped

ABSTRACTZnO thin films were deposited using the DC pulsed magnetron sputtering technique to study how composition and structure influences their magnetic properties. Low sputtering powers and high substrate temperatures were used to increase adatom mobility during deposition, resulting in increased crystallite size and reduced residual stress in the films. Another set of ZnO films were Mn-doped using a second magnetron gun and the amount of doping was changed by controlling the RF sputtering power. For these films, the crystallite size increased with the amount of Mn. The magnetic properties of these materials were counterintuitive; not intentionally doped ZnO showed the highest magnetization and magnetization decreased with increasing Mn concentration.

scholarly journals X-ray absorption spectroscopy of Mn doped ZnO thin films prepared by rf sputtering technique

AIP Advances ◽  
2015 ◽  
Vol 5 (11) ◽  
pp. 117138 ◽  
Author(s):  
Ashok Kumar Yadav ◽  
Sk Maidul Haque ◽  
Dinesh Shukla ◽  
Ram Janay Choudhary ◽  
S. N. Jha ◽  
...  
Keyword(s):  
Thin Films ◽  
Absorption Spectroscopy ◽  
Rf Sputtering ◽  
Zno Thin Films ◽  
X Ray ◽  
Doped Zno ◽  
X Ray Absorption ◽  
Mn Doped

Influence of Various Target to Substrate Distances on the Structural and Optical Properties of Sputtered Gd-Doped ZnO Thin Films

2021 ◽  
Vol 317 ◽  
pp. 471-476
Author(s):  
Nur Amaliyana Raship ◽  
Siti Nooraya Mohd Tawil ◽  
Nafarizal Nayan ◽  
Khadijah Ismail ◽  
Muliana Tahan ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ultra Violet ◽  
Energy Dispersive ◽  
Surface Topology ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray ◽  
Substrate Distance ◽  
Doped Zno

The effect of various target to substrate distance on the physical properties of sputtered Gd-doped ZnO thin films were investigated. The thin films with three distances between a target to substrate ranged from 12.0, 13.5 and 15.0 cm were deposited by a dual-target sputtering method. All the thin film properties were characterized using x-ray diffraction, atomic force microscope, energy dispersive x-ray analysis and ultra-violet visible spectrophotometer. The sharp and intense peak of (002) was observed for a sample with the target to substrate distance of 13.5 cm which indicated good crystallinity as compared to other samples. Gd incorporations of 3 at% in ZnO films were further confirmed via the energy dispersive x-ray analysis. AFM images revealed that the surface topology Gd-doped ZnO thin film have a smooth and uniform surface. The transmittance was above 90 % and slightly decrease with the increase of target to substrate distance. The bandgap value was static at 3.14 eV for all the 12.0, 13.5 and 15.0 cm of various target to substrate distances.

On the defect induced ferromagnetic ordering above room-temperature in undoped and Mn doped ZnO thin films

2009 ◽  
Vol 1183 ◽  
Author(s):  
Mukes Kapilashrami ◽  
Jun Xu ◽  
Valter Ström ◽  
K V Rao ◽  
Lyubov Belova
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Room Temperature ◽  
Unit Cell ◽  
Zno Thin Films ◽  
Intrinsic Defect ◽  
Magnetic Elements ◽  
Doped Zno ◽  
Ferromagnetic Ordering ◽  
Mn Doped

AbstractEvidence for long range ferromagnetic order above room-temperature, RTFM, in pristine ZnO, In2O3, TiO2 nanoparticles and thin films, containing no nominal magnetic elements have been reported recently. This could question the origin of RTFM in doped dilute alloys if for example the ZnO matrix itself develops a defect induced magnetic order with a significant moment per unit cell. In this presentation we report a systematic study of the film thickness dependence of RTFM in pure ZnO deposited by DC Magnetron Sputtering. We observe a maximum in the saturation magnetization, MS, value of 0.62 emu/g (0,018 μB/unit cell), for a ˜480 nm film deposited in an oxygen ambience of appropriate pressure. Above a thickness of around 1 μm the films are diamagnetic as expected. We thus see a sequential transition from ferromagnetism to para- and eventual diamagnetism as a function of film thickness in ZnO. We also find that in such a ZnO matrix with a maximum intrinsic defect induced moment, on doping with Mn the maximum enhanced MS value of 0.78 emu/g is obtained for 1at.% Mn doping. With this approach of appropriate doping in a defect tailored matrix, we routinely obtain RTFM in both undoped and Mn- doped ZnO thin films.

Effects of Mn doping on electrical properties of ZnO thin films

2016 ◽  
Vol 30 (04) ◽  
pp. 1650024 ◽  
Author(s):  
Leili Motevalizadeh ◽  
Boshra Ghanbari Shohany ◽  
Majid Ebrahimizadeh Abrishami
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Spray Pyrolysis Technique ◽  
Oxygen Deficiency ◽  
Zno Thin Films ◽  
Zno Films ◽  
Mn Doping ◽  
X Ray ◽  
Vis Spectroscopy ◽  
Mn Doped

In this paper, we have investigated the effect of Mn doping on the electrical properties of ZnO thin films. ZnO thin films with different amounts of Mn concentrations (0, 5, 10 and 15 mol.%) were prepared by spray pyrolysis technique. The crystal structure was examined by X-ray diffraction (XRD) analysis. XRD patterns showed that all the samples were crystallized in wurtzite structure while a decrease in crystallinity and switch in preferential orientations were observed in Mn-doped thin films comparing to undoped ZnO. The element composition of all thin films was detected by energy dispersive X-ray (EDX). The surface morphology of the films was investigated using field emission scanning electron microscope (FESEM) and optical properties were studied using UV-vis spectroscopy. UV-vis study revealed that the band gap blueshifts with the increase in Mn content and [Formula: see text] increases with the increase in Mn concentration. The resistivity and activation energy were measured at room temperature and ranging from 373 K to 573 K. Comparing to undoped ZnO thin film, the resistivity of Mn-doped ZnO films increased because of different parameters such as increasing barrier height energy and reducing the oxygen deficiency.

PROPERTIES OF GaN-DOPED ZnO THIN FILMS PREPARED BY PULSED LASER DEPOSITION

2010 ◽  
Vol 24 (28) ◽  
pp. 2785-2791
Author(s):  
J. ELANCHEZHIYAN ◽  
D. W. LEE ◽  
W. J. LEE ◽  
B. C. SHIN
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray ◽  
Doped Zno ◽  
P Type ◽  
Type Conduction

p-type conduction in ZnO thin films has been realized by doping with GaN . Undoped and GaN -doped ZnO thin films were prepared by the pulsed laser deposition technique. All the grown films have been characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and Hall effect measurements in order to study their structural, morphological and electrical properties, respectively. The presence of dopants in the films has been confirmed by energy dispersive X-ray spectroscopy (EDS). XRD results reveal that the wurtzite structure deviates for the films with higher concentrations of GaN . Hall measurements show that the 5 and 10 at.% GaN -doped ZnO films have p-type conduction.

scholarly journals Structural and Surface Modifications by Varying Precursor Concentrations on Spray Deposition of Zno Thin Films

2021 ◽  
Author(s):  
Rajalekshmi ES ◽  
V. Anslin Ferby ◽  
R Shabu
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Lattice Structure ◽  
Spray Deposition ◽  
Structural Parameters ◽  
Zno Thin Films ◽  
Zno Films ◽  
Spray Pyrolysis Method ◽  
Volume Number ◽  
Microscope Images

Abstract Zinc Oxide thin films have been deposited on glass substrates using zinc acetate as starting precursor at different concentrations 0.05–0.3 M in steps of 0.05 M by spray pyrolysis method at the constant substrate temperature of 350º C. Lattice structure of the prepared ZnO films were characterized by X-Ray diffraction analysis (XRD). Diffraction pattern revealed hexagonal wurtzite structure with cell edges a = 3.2530 Å, c = 5.2092 Å and density 5.66 g/cm3, which is almost equal to the standard values a = 3.2556 Å, c = 5.2070 Å and 5.6525 g/cm3 (COD No: 96-900-4180). Structural parameters such as dislocation density, lattice stress, unit cell volume, number of crystallites per unit area have been calculated and its dependency with thickness was studied. As the film thickness increases, the crystallite size also increases. Through FTIR, chemical bonds and their stretching vibrations confirmed the metal-oxide phase formation. Scanning electron microscope images showed the formation of good quality film with regularly distributed spherical shaped grains. Roughness values of the films were attained from the Atomic force microscope images. In overall observations, precursor concentration has significant effect on film thickness which in turn modified the structural, optical and morphology properties of the prepared ZnO thin films.

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