GENERAL SPICE MODELS FOR MEMRISTOR AND APPLICATION TO CIRCUIT SIMULATION OF MEMRISTOR-BASED SYNAPSES AND MEMORY CELLS

2010 ◽  
Vol 19 (02) ◽  
pp. 407-424 ◽  
Author(s):  
MOHAMMAD JAVAD SHARIFI ◽  
YASSER MOHAMMADI BANADAKI
Keyword(s):  
Nonvolatile Memory ◽  
Circuit Simulation ◽  
Logic Gate ◽  
Memory Cell ◽  
Model Parameters ◽  
Programmable Logic ◽  
Circuit Element ◽  
Hewlett Packard ◽  
Gate Circuit ◽  
First Time

Memristor had been first theorized nearly 40 years ago by Prof. Chua, as the fourth fundamental circuit element beside the three existing elements (Resistor, Capacitor and Inductor) but because no one has succeeded in building a memristor, it has long remained a theoretical element. Some months ago, Hewlett-Packard (hp) announced it created a memristor using a TiO2/TiO2-X structure. In this paper, the characteristics, structures and relations for the invented hp's memristor are briefly reviewed and then two general SPICE models for the charge-controlled and flux-controlled memristors are introduced for the first time. By adjusting the model parameters to the hp's memristor characteristics some circuit properties of the device are studied and then two important memristor applications as the memory cell in a nonvolatile-RAM structure and as the synapse in an artificial neural network are studied. By utilizing the introduced models and designing the appropriate circuits for two most important applications; a nonvolatile memory structure and a programmable logic gate, circuit simulations are done and the results are presented.

Fabrication of YMnO3 Films: New Candidate for Non-Volatile Memory Devices

1996 ◽  
Vol 433 ◽  
Author(s):  
Norifumi Fujimura ◽  
Tadashi Ishida ◽  
Takeshi Yoshimura ◽  
Taichiro Ito
Keyword(s):  
Nonvolatile Memory ◽  
Valence Electron ◽  
Bottom Electrode ◽  
Rf Magnetron Sputtering ◽  
Film Deposition ◽  
Deposition Condition ◽  
Memory Devices ◽  
Non Volatile Memory ◽  
Nonvolatile Memory Devices ◽  
First Time

AbstractWe have proposed ReMnO3 (Re:rare earth) thin films, as a new candidate for nonvolatile memory devices. In this paper, we try to fabricate (0001) oriented YMnO3 films on (111)MgO, (0001)ZnO:Al/(0001) sapphire and (111)Pt/(111)MgO using rf magnetron sputtering. We succeed in obtaining (0001) epitaxial YMnO3 films on (111) MgO and (0001)ZnO:Al/(0001)sapphire substrate, and polycrystalline films on (111)Pt/(1 11)MgO for the first time. Electrical property of the bottom electrode (ZnO:Al) changes with varying the deposition condition of YMnO3 films. However, we find an optimum deposition condition of ZnO:Al film such that it functions as a bottom electrode even after YMnO3 film deposition. The dielectric properties of the epitaxial and polycrystalline YMnO3 films are almost the same. The YMnO3 films show leaky electrical properties. This may be caused by a change in the valence electron of Mn from 3+.

Charge storage and data retention characteristics of forming gas-annealed Gd2O3-nanocrystal nonvolatile memory cell

2012 ◽  
Vol 52 (8) ◽  
pp. 1627-1631 ◽  
Author(s):  
Jer-Chyi Wang ◽  
Chih-Ting Lin ◽  
Chi-Hsien Huang ◽  
Chao-Sung Lai ◽  
Chin-Hsiang Liao
Keyword(s):  
Nonvolatile Memory ◽  
Memory Cell ◽  
Charge Storage ◽  
Data Retention ◽  
Retention Characteristics

The dual role of PZT in metal-PZT-Al2O3 structure for nonvolatile memory cell

2010 ◽  
Author(s):  
Sharon Cui ◽  
Dongseog Eun ◽  
Bozidar Marinkovic ◽  
Cheng-Yi Peng ◽  
Xiao Pan ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Memory Cell ◽  
Dual Role

scholarly journals Modeling of temporal groundwater level variations based on a Kalman filter adaptation algorithm with exogenous inputs

2016 ◽  
Vol 19 (2) ◽  
pp. 191-206 ◽  
Author(s):  
Emmanouil A. Varouchakis
Keyword(s):  
Kalman Filter ◽  
Groundwater Level ◽  
Auxiliary Information ◽  
Model Parameters ◽  
Adaptation Algorithm ◽  
Arx Model ◽  
Resources Management ◽  
Temporal Modelling ◽  
The Mean ◽  
First Time

Reliable temporal modelling of groundwater level is significant for efficient water resources management in hydrological basins and for the prevention of possible desertification effects. In this work we propose a stochastic method of temporal monitoring and prediction that can incorporate auxiliary information. More specifically, we model the temporal (mean annual and biannual) variation of groundwater level by means of a discrete time autoregressive exogenous variable (ARX) model. The ARX model parameters and its predictions are estimated by means of the Kalman filter adaptation algorithm (KFAA) which, to our knowledge, is applied for the first time in hydrology. KFAA is suitable for sparsely monitored basins that do not allow for an independent estimation of the ARX model parameters. We apply KFAA to time series of groundwater level values from the Mires basin in the island of Crete. In addition to precipitation measurements, we use pumping data as exogenous variables. We calibrate the ARX model based on the groundwater level for the years 1981 to 2006 and use it to predict the mean annual and biannual groundwater level for recent years (2007–2010). The predictions are validated with the available annual averages reported by the local authorities.

scholarly journals Recurrence time distribution and temporal clustering properties of a cellular automaton modelling landslide events

2013 ◽  
Vol 20 (6) ◽  
pp. 1071-1078 ◽  
Author(s):  
E. Piegari ◽  
R. Di Maio ◽  
A. Avella
Keyword(s):  
Time Series ◽  
Probability Distribution ◽  
Cellular Automaton ◽  
Time Window ◽  
Fano Factor ◽  
Recent Analysis ◽  
Recurrence Time ◽  
Model Parameters ◽  
Reasonable Prediction ◽  
First Time

Abstract. Reasonable prediction of landslide occurrences in a given area requires the choice of an appropriate probability distribution of recurrence time intervals. Although landslides are widespread and frequent in many parts of the world, complete databases of landslide occurrences over large periods are missing and often such natural disasters are treated as processes uncorrelated in time and, therefore, Poisson distributed. In this paper, we examine the recurrence time statistics of landslide events simulated by a cellular automaton model that reproduces well the actual frequency-size statistics of landslide catalogues. The complex time series are analysed by varying both the threshold above which the time between events is recorded and the values of the key model parameters. The synthetic recurrence time probability distribution is shown to be strongly dependent on the rate at which instability is approached, providing a smooth crossover from a power-law regime to a Weibull regime. Moreover, a Fano factor analysis shows a clear indication of different degrees of correlation in landslide time series. Such a finding supports, at least in part, a recent analysis performed for the first time of an historical landslide time series over a time window of fifty years.

Voltage-readable nonvolatile memory cell with programmable ferroelectric multistates in organic inverter configuration

2013 ◽  
Vol 14 (5) ◽  
pp. 1231-1236 ◽  
Author(s):  
Min-Hoi Kim ◽  
Gyu Jeong Lee ◽  
Chang-Min Keum ◽  
Sin-Doo Lee
Keyword(s):  
Nonvolatile Memory ◽  
Memory Cell ◽  
Organic Inverter

MEMRISTOR OSCILLATORS

2008 ◽  
Vol 18 (11) ◽  
pp. 3183-3206 ◽  
Author(s):  
MAKOTO ITOH ◽  
LEON O. CHUA
Keyword(s):  
Functional Relationship ◽  
Nonlinear Oscillators ◽  
Computer Memory ◽  
Circuit Element ◽  
Hewlett Packard ◽  
Potential Applications

The memristor has attracted phenomenal worldwide attention since its debut on 1 May 2008 issue of Nature in view of its many potential applications, e.g. super-dense nonvolatile computer memory and neural synapses. The Hewlett–Packard memristor is a passive nonlinear two-terminal circuit element that maintains a functional relationship between the time integrals of current and voltage, respectively, viz. charge and flux. In this paper, we derive several nonlinear oscillators from Chua's oscillators by replacing Chua's diodes with memristors.

Intrinsic Mismatch Between Floating-Gate Nonvolatile Memory Cell and Equivalent Transistor

2007 ◽  
Vol 28 (5) ◽  
pp. 440-442 ◽  
Author(s):  
Russell Duane ◽  
Quentin Rafhay ◽  
M. Florian Beug ◽  
Michiel van Duuren
Keyword(s):  
Nonvolatile Memory ◽  
Memory Cell ◽  
Floating Gate
Sign in / Sign up

Export Citation Format

Share Document