AN EFFICIENT LOW-POWER SIGMA-DELTA MODULATOR FOR MULTI-STANDARD WIRELESS APPLICATIONS

2012 ◽  
Vol 21 (04) ◽  
pp. 1250028 ◽  
Author(s):  
B. HODA SEYEDHOSSEINZADEH ◽  
MOHAMMAD YAVARI

This paper describes the design and implementation of a reconfigurable low-power sigma-delta modulator (SDM) for multi-standard wireless communications in a 90 nm CMOS technology. Both architectural and circuital reconfigurations are used to adapt the performance of the modulator to multi-standard applications. The feasibility of the presented solution is demonstrated using system-level simulations as well as transistor-level simulations of the modulator. HSPICE simulation results show that the proposed modulator achieves 76.8/78.9/80.8/85/89.5 dB peak signal-to-noise plus distortion ratio (SNDR) within the standards WiFi, WiMAX, WCDMA, Bluetooth and GSM with the bandwidth of 12.5 MHz, 10 MHz, 1.92 MHz, 0.5 MHz, and 250 kHz, respectively, under the power consumption of 37/37/12/5/5 mW using a single 1 V power supply.

2014 ◽  
Vol 644-650 ◽  
pp. 3797-3801
Author(s):  
Min Guo ◽  
Hong Hui Deng ◽  
Bo Wen Ding ◽  
Yong Sheng Yin

A second-order single bit Sigma - Delta modulator which can be applied to pressure sensor is designed in this paper.The modulator uses switched-capacitor circuit,and the operational amplifier adopts a differential folded-cascode structure with PMOS tube as input. Optimizes the coefficients at the system level design using Simulink tool. The schematic simulation and analysis is by the tools of Spectre and MATLAB with Global Foundry 0.35um CMOS technology. The modulator with oversampling rate of 256 is designed at the 3.3V power supply. Finally, this paper shows the circuit simulation results of the sigma-delta modulator whose signal-noise rate is 103.9dB and resolution is 16.97bits.


Author(s):  
Kanan Bala Ray ◽  
Sushanta Kumar Mandal ◽  
Shivalal Patro

<em>In this paper floating gate MOS (FGMOS) along with sleep transistor technique and leakage control transistor (LECTOR) technique has been used to design low power SRAM cell. Detailed investigation on operation, analysis and result comparison of conventional 6T, FGSRAM, FGSLEEPY, FGLECTOR and FGSLEEPY LECTOR has been done. All the simulations are done in Cadence Virtuoso environment on 45 nm standard CMOS technology with 1 V power supply voltage. Simulation results show that FGSLEEPY LECTOR SRAM cell consumes very low power and achieves high stability compared to conventional FGSRAM Cell</em>


2014 ◽  
Vol 23 (02) ◽  
pp. 1450023
Author(s):  
MOHAMED O. SHAKER ◽  
MAGDY A. BAYOUMI

A novel low power clock gated successive approximation register (SAR) is proposed. The new register is based on gating the clock signal when there is no data switching activity. It operates with fewer transistors and no redundant transitions which makes it suitable for low power applications. The proposed register consisting of 8 bits has been designed up to the layout level with 1 V power supply in 90 nm CMOS technology and has been simulated using SPECTRE. Simulation results have shown that the proposed register saves up to 75% of power consumption.


2004 ◽  
Vol 1 (3) ◽  
pp. 37-44 ◽  
Author(s):  
Dragisa Milovanovic ◽  
Milan Savic ◽  
Miljan Nikolic

As a part of wider project sigma-delta modulator was designed. It represents an A/D part of a power meter IC. Requirements imposed were: SNDR and dynamic range > 50 dB for maximum input swing of 250 mV differential at 50 Hz. Over sampling ratio is 128 with clock frequency of 524288 Hz which gives bandwidth of 2048 Hz. Circuit is designed in 3.3 V supply standard CMOS 0.35 ?m technology.


2015 ◽  
Vol 63 (4) ◽  
pp. 919-922 ◽  
Author(s):  
P. Śniatała ◽  
M. Naumowicz ◽  
A. Handkiewicz ◽  
S. Szczęsny ◽  
J.L.A. de Melo ◽  
...  

Abstract The paper presents a second order current mode sigma-delta modulator designed with the help of a new elaborated tool to optimize the transistor sizes. The circuit is composed of two continuous time loop filters, a current comparator and a one bit DAC with a current output. The resulting circuit, designed in a 65 nm 1.2 V CMOS technology, has a bandwidth of 2 MHz for a clock frequency of 250 MHz. The electrical simulation results show that it achieves a maximum signal-to-noise-plus-distortion ratio (SNDR) of 53.6 dB while dissipating 93 μW, which corresponds to an efficiency of 59.7 fJ/conv. The fully current mode structure makes the circuit suitable to be applied in a current mode signal processing like biosensors or image pixels arrays.


Sign in / Sign up

Export Citation Format

Share Document