A 790 nW Low-Noise Instrumentation Amplifier for Bio-Sensing Based On Gm-RSC Structure

2018 ◽  
Vol 27 (10) ◽  
pp. 1850157
Author(s):  
Tao Yin ◽  
Guocheng Huang ◽  
Xiaodong Xu ◽  
Yachao Zhang ◽  
Xinxia Cai ◽  
...  
Keyword(s):  
Low Power ◽  
Low Noise ◽  
Instrumentation Amplifier ◽  
Rejection Ratio ◽  
Power Supply Rejection Ratio ◽  
Transconductance Amplifier ◽  
Low Power Dissipation ◽  
Amplifier Stage ◽  
Potential Recording ◽  
Operational Frequency

This paper presents a low-power low-noise instrumentation amplifier (IA) for bio-potential recording. The proposed IA is based on a novel Gm-RSC structure, whose gain is determined by the transconductance (Gm) and the equivalent resistance ([Formula: see text]) of the switched-capacitor (SC) load. The transconductance amplifier stage is based on the current-reuse telescope topology to achieve low noise at low-power dissipation. A resistor-controlled oscillator is designed to generate desirable operational frequency for SC load and to continuously tune the mid-band gain of the IA for different biomedical applications. Measurement results show that the input referred noise of the proposed IA is about 1.27[Formula: see text][Formula: see text]VRMS ([Formula: see text][Formula: see text]Hz) and the noise efficiency factor is 3.3. The range of tunable gain is from 28 to 40[Formula: see text]dB. The common mode rejection ratio and power supply rejection ratio at 50[Formula: see text]Hz are 72 and 78[Formula: see text]dB, respectively. The IA consumes only 660[Formula: see text]nA current at 1.2[Formula: see text]V supply and the active area of the IA is only 0.035[Formula: see text]mm2.

Characterization of lateral bipolar transistor structures

1990 ◽  
Vol 48 (4) ◽  
pp. 628-629
Author(s):  
N. David Theodore ◽  
Sophie Verdonckt-Vandebroek ◽  
C. Barry Carter ◽  
S. Simon Wong
Keyword(s):  
Low Power ◽  
Cross Sections ◽  
Power Dissipation ◽  
Diagnostic Techniques ◽  
Low Noise ◽  
Oxide Semiconductor ◽  
Structural Defects ◽  
Low Power Dissipation ◽  
Packing Densities ◽  
Driving Capability

Semiconductor devices are being scaled down into the submicron regime in order to meet technological demands for increased device-packing densities. Other factors considered for device design include low power dissipation, noise immunity, speed and high driving capability. Of these factors, high packing densities and low power dissipation can be derived using Coinplementary-Metal-Oxide-Semiconductor (CMOS) schemes. Bipolar-Junction-Transistor (BJT) schemes on the other hand provide driving capability, low noise performance and speed, at the expense however of greater device power- consumption. Combining CMOS and BJT technologies, a compromise can be struck between devicespeed and power dissipation. Most such combinations have resulted in vertical BJT requiring complex fabrication sequences. Recently, simpler lateral BJTs have been proposed for use in Bipolar CMOS processes. The viability of such semiconducting devices depends in part on the absence or controlled presence of structural defects. Diagnostic techniques are therefore required that are capable of high spatial resolution, for investigating the origin, behavior and possible elimination of fabrication-process-induced defects. Transmission electron microscopy (TEM) of device cross-sections can be effectively used for this purpose. In this study, lateral BJT structures are characterized using cross-section TEM and the results are correlated with electrical device-behavior.

Low-power, low-noise instrumentation amplifier for physiological signals

1984 ◽  
Vol 22 (3) ◽  
pp. 272-274 ◽  
Author(s):  
G. H. Hamstra ◽  
A. Peper ◽  
C. A. Grimbergen
Keyword(s):  
Low Power ◽  
Low Noise ◽  
Physiological Signals ◽  
Instrumentation Amplifier

A high-resolution tunneling magneto-resistance sensor interface circuit

2017 ◽  
Vol 31 (04) ◽  
pp. 1750030 ◽  
Author(s):  
Xiangyu Li ◽  
Liang Yin ◽  
Weiping Chen ◽  
Zhiqiang Gao ◽  
Xiaowei Liu
Keyword(s):  
Band Gap ◽  
Temperature Coefficient ◽  
Low Frequency ◽  
Low Noise ◽  
Instrumentation Amplifier ◽  
Interface Circuit ◽  
Input Noise ◽  
Rejection Ratio ◽  
Equivalent Input Noise ◽  
Magneto Resistance

In this paper, a chopper instrumentation amplifier and a high-precision and low-noise CMOS band gap reference in a standard 0.5 [Formula: see text] CMOS technology for a tunneling magneto-resistance (TMR) sensor is presented. The noise characteristic of TMR sensor is an important factor in determining the performance of the sensor. In order to obtain a larger signal to noise ratio (SNR), the analog front-end chip ASIC weak signal readout circuit of the sensor includes the chopper instrumentation amplifier; the high-precision and low-noise CMOS band gap reference. In order to achieve the low noise, the chopping technique is applied in the first stage amplifier. The low-frequency flicker noise is modulated to high-frequency by chopping switch, so that the modulator has a better noise suppression performance at the low frequency. The test results of interface circuit are shown as below: At a single 5 V supply, the power dissipation is 40 mW; the equivalent offset voltage is less than 10 uV; the equivalent input noise spectral density 30 nV/Hz[Formula: see text](@10 Hz), the equivalent input noise density of magnetic is 0.03 nTHz[Formula: see text](@10 Hz); the scale factor temperature coefficient is less than 10 ppm/[Formula: see text]C, the equivalent input offset temperature coefficient is less than 70 nV/[Formula: see text]C; the gain error is less than 0.05%, the common mode rejection ratio is greater than 120 dB, the power supply rejection ratio is greater than 115 dB; the nonlinear is 0.1% FS.

scholarly journals A 76db 828nv/√Hz Low Noise Bio Signal OTA For Neural Signal Recording Applications

2018 ◽  
Vol 7 (3.3) ◽  
pp. 48
Author(s):  
Sarin Vijay Mythry ◽  
D Jackuline Moni
Keyword(s):  
Low Frequency ◽  
Low Noise ◽  
Cmos Process ◽  
Gain Bandwidth ◽  
Rejection Ratio ◽  
Power Supply Rejection Ratio ◽  
Research Article ◽  
Different Types ◽  
The Common ◽  
Low Amplitude

The low frequency, low amplitude biomedical signals which created a tremendous demand amongst clinicians and neuroscience researchers are to be amplified in the range of millihertz to kilohertz by rejecting the dc offsets. This research article presents a Bio Signal OTA (Bio-OTA) with 76dB gain, 828nV/ 16Hz"> noise and 390nW power is designed in 90nm CMOS process and also a brief survey on the different types of OTAs used for neuro recording applications is discussed. The Wilson current mirror is used to design 1volt Bio-OTA. The Common mode rejection ratio (CMRR) is obtained as 75dB, power supply rejection ratio (PSRR) is above 88dB and gain bandwidth product (GBW) is 223MHz.  

Sign in / Sign up

Export Citation Format

Share Document