HIGH-RESOLUTION, LOW-TEMPERATURE PHOTOEMISSION SPECTROSCOPY  AT THE HISOR LINEAR UNDULATOR BEAMLINE

In order to study the electronic states of solids, using high-resolution, low-temperature photoemission spectroscopy (PES) with tunable photon energies, we have constructed a high-resolution undulator beamline operating in the photon-energy range 26–300 eV at the compact 700 MeV electron-storage ring HiSOR located at Hiroshima University. By way of gas-phase experiments, with photon flux larger than 2 × 1010 photons/s, photon-energy resolving powers of E/ΔE > 16000 and 3800 were obtained at hν ~ 48 eV and ~ 244 eV, respectively. High-resolution PES experiments on evaporated Au at 8 K were performed at the beamline with a total energy resolution of ΔE = 12 meV at hν = 48 eV. Among the first experiments from the beamline, a resonant photoemission study of UNiSn is presented. The U 5f derived peak is significantly enhanced at hν = 98 eV.

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Low-Temperature High-Resolution Resonant Photoemission Study of Kondo Insulator Ce3Bi4Pt3

Japanese Journal of Applied Physics ◽

10.7567/jjaps.38s1.209 ◽

1999 ◽

Vol 38 (S1) ◽

pp. 209 ◽

Cited By ~ 2

Author(s):

Yukiharu Takeda ◽

Masashi Arita ◽

Yoshihiro Okamura ◽

Hitoshi Sato ◽

Kenya Shimada ◽

...

Keyword(s):

High Resolution ◽

Low Temperature ◽

Kondo Insulator ◽

Resonant Photoemission ◽

Photoemission Study

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Ce4f STATES IN CePd2Si2 AND CeNi2Si2 INVESTIGATED BY RESONANT PHOTOEMISSION SPECTROSCOPY

Surface Review and Letters ◽

10.1142/s0218625x02003305 ◽

2002 ◽

Vol 09 (02) ◽

pp. 1035-1039 ◽

Cited By ~ 1

Author(s):

K. MIMURA ◽

Y. OKABAYASHI ◽

H. MIZOHATA ◽

D. SAKIYAMA ◽

O. SAKAI ◽

...

Keyword(s):

High Resolution ◽

Relative Intensity ◽

Electronic States ◽

Kondo Temperature ◽

Photoemission Spectroscopy ◽

Present Calculation ◽

Intermediate Valence ◽

Final State ◽

Resonant Photoemission ◽

Kondo Resonance

Ce 4f electronic states in an antiferromagnetic Kondo compound CePd 2 Si 2 and a strong intermediate-valence compound CeNi 2 Si 2 have been investigated by means of high-resolution Ce 4d–4f resonant photoemission spectroscopy at 12 K. The relative intensity of the f5/21 to f7/21 final state in the Ce 4f spectrum for CeNi 2 Si 2 is stronger than the relative intensity for CePd 2 Si 2, indicating that the intensity of Kondo resonance scales the Kondo temperature since the Ce 4f spectrum near the Fermi level dominantly reflects the bulk component. Both Ce 4f spectra have been well fitted by the spectral calculations based on a single impurity Anderson model with consideration of the bulk and surface components. Our present calculation indicates that the model is applicable to the analyses of the Ce 4f spectra of the weakly and strongly hybridized systems.

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Emergent flat band electronic structure in a VSe2/Bi2Se3 heterostructure

Communications Materials ◽

10.1038/s43246-020-00115-w ◽

2021 ◽

Vol 2 (1) ◽

Author(s):

Turgut Yilmaz ◽

Xiao Tong ◽

Zhongwei Dai ◽

Jerzy T. Sadowski ◽

Eike F. Schwier ◽

...

Keyword(s):

Dirac Point ◽

Electronic States ◽

Quantum States ◽

Photoemission Spectroscopy ◽

Flat Band ◽

Strongly Correlated ◽

Dirac Cone ◽

Angle Resolved Photoemission Spectroscopy ◽

Topological Materials ◽

Photoemission Study

AbstractFlat band electronic states are proposed to be a fundamental tool to achieve various quantum states of matter at higher temperatures due to the enhanced electronic correlations. However, materials with such peculiar electronic states are rare and often rely on subtle properties of the band structures. Here, by using angle-resolved photoemission spectroscopy, we show the emergent flat band in a VSe2 / Bi2Se3 heterostructure. Our photoemission study demonstrates that the flat band covers the entire Brillouin zone and exhibits 2D nature with a complex circular dichroism. In addition, the Dirac cone of Bi2Se3 is not reshaped by the flat band even though they overlap in proximity of the Dirac point. These features make this flat band distinguishable from the ones previously found. Thereby, the observation of a flat band in the VSe2 / Bi2Se3 heterostructure opens a promising pathway to realize strongly correlated quantum effects in topological materials.

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High-resolution resonant photoemission study of CeRu2

Physica B Condensed Matter ◽

10.1016/s0921-4526(99)01157-6 ◽

2000 ◽

Vol 281-282 ◽

pp. 729-730 ◽

Cited By ~ 3

Author(s):

K Matsuda ◽

A Sekiyama ◽

S Suga ◽

S Imada ◽

Y Saitoh ◽

...

Keyword(s):

High Resolution ◽

Resonant Photoemission ◽

Photoemission Study

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High resolution Ce 3 d –4 f resonant photoemission study of CeNiSn and CePdSn

Solid State Communications ◽

10.1016/s0038-1098(99)00211-2 ◽

1999 ◽

Vol 111 (7) ◽

pp. 373-378 ◽

Cited By ~ 10

Author(s):

A Sekiyama ◽

S Suga ◽

Y Saitoh ◽

S Ueda ◽

H Harada ◽

...

Keyword(s):

High Resolution ◽

Resonant Photoemission ◽

Photoemission Study

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Improving the energy resolution of bent crystal X-ray spectrometers with position-sensitive detectors

Journal of Synchrotron Radiation ◽

10.1107/s1600577514011163 ◽

2014 ◽

Vol 21 (4) ◽

pp. 762-767 ◽

Cited By ~ 9

Author(s):

Ari-Pekka Honkanen ◽

Roberto Verbeni ◽

Laura Simonelli ◽

Marco Moretti Sala ◽

Ali Al-Zein ◽

...

Keyword(s):

High Resolution ◽

Internal Stress ◽

Photon Energy ◽

Energy Resolution ◽

Preceding Paper ◽

X Ray ◽

Bent Crystal ◽

Position Sensitive ◽

Position Sensitive Detectors ◽

Bent Crystals

Wavelength-dispersive high-resolution X-ray spectrometers often employ elastically bent crystals for the wavelength analysis. In a preceding paper [Honkanenet al.(2014).J. Synchrotron Rad.21, 104–110] a theory for quantifying the internal stress of a macroscopically large spherically curved analyser crystal was presented. Here the theory is applied to compensate for the corresponding decrease of the energy resolution. The technique is demonstrated with a Johann-type spectrometer using a spherically bent Si(660) analyser in near-backscattering geometry, where an improvement in the energy resolution from 1.0 eV down to 0.5 eV at 9.7 keV incident photon energy was observed.

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