A STUDY OF RECOVERY STAGES IN SOME PLASTICALLY DEFORMED ALUMINUM ALLOYS BY POSITRON LIFETIME SPECTROSCOPY

2005 ◽  
Vol 12 (02) ◽  
pp. 203-207 ◽  
Author(s):  
M. A. ABDEL-RAHMAN ◽  
M. S. ABDALLAH ◽  
EMAD A. BADAWI
Keyword(s):  
Aluminum Alloys ◽  
Positron Annihilation ◽  
Room Temperature ◽  
Positron Lifetime ◽  
Isochronal Annealing ◽  
Temperature Range ◽  
Positron Lifetime Spectroscopy

Positron annihilation was performed to study the isochronal annealing of wrought (2024, 7075) and casting ( AlSi 11.35 Mg 0.23, AlSi 10.9 Mg 0.17 Sr 0.06) aluminum alloys in the temperature range from room temperature to 773 K after they had been deformed at room temperature with 25% deformation. Two annealing stages of microstructures were distinguished which were attributed to recovery in 2024, and AlSi 11.35 Mg 0.23, AlSi 10.9 Mg 0.17 Sr 0.06 due to point and dislocations respectively, and only one due to dislocations in 7075.

scholarly journals Vacancies in electron irradiated 6H silicon carbide studied by positron annihilation spectroscopy

2003 ◽  
Vol 792 ◽  
Author(s):  
C. H. Lam ◽  
C. C. Ling ◽  
C. D. Beling ◽  
S. Fung ◽  
H. M. Weng ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Positron Annihilation ◽  
Electron Irradiation ◽  
Room Temperature ◽  
Positron Lifetime ◽  
Positron Annihilation Spectroscopy ◽  
Isochronal Annealing ◽  
Positron Lifetime Spectroscopy ◽  
Irradiation Process ◽  
Positron Lifetime Measurement

ABSTRACTPositron lifetime spectroscopy was employed to study the as-electron-irradiated (10 MeV, 1×1018 cm-2) n-type 6H silicon carbide sample in the measuring temperature range of 15 K to 294 K. Isochronal annealing studies were also performed up to the temperature of 1373 K by carrying out the room temperature positron lifetime measurement. Negatively charged carbon vacancies and VCVSi divacancy were identified as the major vacancy type defects induced by the electron irradiation process. The concentration of the VCVSi divacancy was found to decrease dramatically after the 1973 K annealing.

Effect of Nature Aging on Positron Lifetime Spectroscopy in Casting and Wrought Al-alloys

2007 ◽  
Vol 265 ◽  
pp. 13-18 ◽  
Author(s):  
M.A. Abdel-Rahman ◽  
M. Abdel-Rahman ◽  
N.A. Kamel ◽  
M.S. Abdallah ◽  
Emad A. Badawi
Keyword(s):  
Aluminum Alloys ◽  
Positron Annihilation ◽  
Point Defects ◽  
Positron Lifetime ◽  
Natural Aging ◽  
Al Alloys ◽  
Isochronal Annealing ◽  
Mean Lifetime ◽  
Positron Lifetime Spectroscopy

Positron annihilation has been performed in order to study the isochronal annealing of wrought (2024, 7075) and cast (AlSi11.35Mg0.23, AlSi10.9Mg0.17Sr0.06) aluminum alloys, at temperatures ranging from RT to 773K, after having been deformed at RT to 25% deformation. Two annealing stages of the microstructures were distinguished, which were attributed to recovery in (2024, AlSi11.35Mg0.23, AlSi10.9Mg0.17Sr0.06) due to point defects and dislocations, respectively, and only one (due to dislocations) in (7075). Also, natural aging for up to more than 650 days was studied as a function of mean lifetime.

An Investigation of Point Defects in NiAl Using Positron Annihilation Techniques

1998 ◽  
Vol 552 ◽  
Author(s):  
Werner Puff ◽  
Bernd Logar ◽  
Adam G. Balogh
Keyword(s):  
Positron Annihilation ◽  
Point Defects ◽  
Proton Irradiation ◽  
Positron Lifetime ◽  
Composition Range ◽  
Isochronal Annealing ◽  
Doppler Broadening ◽  
Positron Lifetime Spectroscopy ◽  
Induced Defects

ABSTRACTVacancy-like defects in NiAl in the composition range 47 at.-% < CNi < 53 at.-% are investigated by means of positron lifetime spectroscopy and Doppler-broadening measurements. The observed lifetimes in the annealed samples confirm that defects are quenched-in during the production of the samples. Isochronal annealing of samples quenched at 1600°C and after proton irradiation show that the induced defects are quite different.

Positron annihilation measurements in high energy alpha irradiated undoped indium antimonide

2014 ◽  
Vol 28 (30) ◽  
pp. 1450210 ◽  
Author(s):  
Sandip Pan ◽  
Arunava Mandal ◽  
Subrata Mukherjee ◽  
Achintya Kumar Saha ◽  
Anirban Roychowdhury ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Temperature Region ◽  
Indium Antimonide ◽  
Line Shape ◽  
Room Temperature ◽  
Positron Lifetime ◽  
High Energy ◽  
Isochronal Annealing ◽  
Positron Annihilation Lifetime ◽  
Lifetime Analysis

Positron annihilation lifetime spectroscopy and Doppler broadening annihilation line-shape measurements were carried out in 40 MeV alpha-irradiated undoped InSb. After irradiation the sample was subjected to an isochronal annealing over temperature region of 25°C–400°C with annealing time of 30 min at each set temperature. After each annealing the positron measurements were carried out at room temperature. Formation of radiation induced defects and their recovery with annealing temperature were investigated. A three component positron lifetime analysis was undertaken to observe the trapping of positrons in the sample after irradiation and during annealing. The average positron lifetime value τ avg = 313 ps at room temperature after irradiation indicated the presence of defects and the high value of τ2 at room temperature suggested that the probable defects were divacancies. A two stage recovery of defects was observed during post irradiation isochronal annealing over the temperature region 25°C–400°C. The variations in line-shape parameter (S) and defect specific parameter (R) during annealing in the temperature region 25°C–400°C resembled the behavior of τ avg indicating the migration of vacancies, formation of vacancy clusters and the disappearance of defects between 300°C to 400°C.

Defects Distribution of Pr2Fe14B Hard Magnetic Magnet from Amorphous to Nanostructures Characterized by Positron Annihilation Spectroscopy

2005 ◽  
Vol 475-479 ◽  
pp. 2123-2126
Author(s):  
Yu Cheng Wu ◽  
W. Sprengel ◽  
K. Reimann ◽  
K.J. Reichle ◽  
D. Goll ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Grain Growth ◽  
Melt Spinning ◽  
Positron Lifetime ◽  
Positron Annihilation Spectroscopy ◽  
Amorphous Structure ◽  
Defect Distribution ◽  
Positron Lifetime Spectroscopy ◽  
Positron Lifetimes ◽  
Shape And Size

The defect distributions have been investigated using positron lifetime spectroscopy on amorphous and nanocrystalline Pr2Fe14B samples, produced by melt-spinning and nanocrystallization route. The main two components can be concluded that were ascribed to vacancy-like defects in the intergranular layers or the interfaces, and microvoids or large free volumes with size compared to several missing atoms at the interactions of the atomic aggregates or the crystallites. The remarkable changes in the positron lifetimes from the amorphous structure to the nanocrystalline with varied sizes can be interpreted, indicating that the structural transformation and the grain growth induce the defect distribution changes occurring at the interfaces with different shape and size.

Positron spectroscopy of bulk and near-surface defects in semiconductors

1989 ◽  
Vol 67 (8) ◽  
pp. 813-817
Author(s):  
P. Hautojārvi
Keyword(s):  
Positron Annihilation ◽  
Positron Lifetime ◽  
Surface Defects ◽  
Positron Beam ◽  
Near Surface ◽  
Slow Positron ◽  
Positron Spectroscopy ◽  
Positron Lifetime Spectroscopy ◽  
Defects In Semiconductors ◽  
Ion Implanted

The use of positron annihilation to study defects in semiconductors is discussed. Positron-lifetime spectroscopy reveals As vacancies in as-grown GaAs and gives information on ionization levels. The vacancy profiles in ion-implanted Si are investigated by slow positron beam.

Microstructural Evolution of Radiation Induced Defects In ZnO During Isochronal Annealing

1998 ◽  
Vol 540 ◽  
Author(s):  
S. Brunner ◽  
W. Puff ◽  
P. Mascher ◽  
A.G. Balogh
Keyword(s):  
Room Temperature ◽  
Proton Irradiation ◽  
Positron Lifetime ◽  
Thermal Evolution ◽  
Isochronal Annealing ◽  
Doppler Broadening ◽  
Thermal Dependence ◽  
Radiation Induced ◽  
Induced Defects ◽  
Mev Protons

AbstractIn this study we discuss the microstructural changes after electron and proton irradiation and the thermal evolution of the radiation induced defects during isochronal annealing. The nominally undoped samples were irradiated either with 3 MeV protons to a fluence of 1.2× 1018 p/cm2 or with 1 MeV electrons to a fluence of 1×1018 e/cm2. The investigation was performed with positron lifetime and Doppler-broadening measurements. The measurements were done at room temperature and in some cases down to 10 K to investigate the thermal dependence of the trapping characteristics of the positrons.

Positron Lifetime Studies of Polyaniline Conducting Polymers

1995 ◽  
Vol 413 ◽  
Author(s):  
C. M. Huang ◽  
J. Liu ◽  
T. C. Sandreczki ◽  
Y. C. Jean
Keyword(s):  
Positron Annihilation ◽  
Room Temperature ◽  
Positron Lifetime ◽  
The Other ◽  
Chemical Compositions ◽  
Lifetime Measurements ◽  
Positron Annihilation Lifetime ◽  
Positron Lifetimes ◽  
Lifetime Studies ◽  
Made In

ABSTRACTPositron annihilation lifetime measurements are made in a series of polyaniline polymers with different chemical compositions and protonation ratios at room temperature. Two positron lifetimes are observed in these materials: one is assigned to annihilation in the bulk and the other to voids created due to protonation. A relationship between conductivities and positron annihilation probabilities is found.

Defects in Electron Irradiation Te-Doped GaSb Studied by Positron Lifetime Spectroscopy

2008 ◽  
Vol 607 ◽  
pp. 140-142
Author(s):  
H. Li ◽  
J.Y. Ke ◽  
J.B. Pang ◽  
Bo Wang ◽  
Z. Wang
Keyword(s):  
Electron Irradiation ◽  
Irradiation Dose ◽  
Room Temperature ◽  
Positron Lifetime ◽  
Rydberg States ◽  
Average Lifetime ◽  
Shallow Trap ◽  
Lifetime Measurements ◽  
Positron Lifetime Spectroscopy ◽  
Antisite Defects

Defects induced by electron irradiation in Te-doped liquid-encapsulated Czochralski–grown GaSb were studied by the positron lifetime spectroscopy. The lifetime measurements under room temperature indicated there were VGa-related defects with a characteristic lifetime of 298 ps in the heavily Te-doped as-grown GaSb samples. The average lifetime increased with the increase of irradiation dose in lightly Te-doped GaSb,but the behavior was opposite in the heavily Te-doped samples. It should be due to the shift of Fermi level in heavily Te-doped GaSb and the occurrence of gallium vacancies in different charge states. In the temperature dependence measurements carried out on heavily Te-doped samples, we observed positron shallow trap, and this shallow trap should be attributed to positrons forming hyrogenlike Rydberg states with GaSb antisite defects.

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