STRUCTURE AND OPTICAL PROPERTIES OF InN THIN FILM GROWN ON SiC BY REACTIVE RF MAGNETRON SPUTTERING

2013 ◽  
Vol 20 (01) ◽  
pp. 1350008 ◽  
Author(s):  
M. AMIRHOSEINY ◽  
Z. HASSAN ◽  
S. S. NG ◽  
G. ALAHYARIZADEH
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Root Mean Square Roughness ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Growth Orientation ◽  
Atomic Force

The structure and optical properties of InN thin film grown on 6H-SiC by reactive radio frequency magnetron sputtering were investigated. X-ray diffraction measurement shows that the deposited InN film has (101) preferred growth orientation and wurtzite structure. Atomic force microscopy results reveal smooth surface with root-mean-square roughness around 3.3 nm. One Raman-active optical phonon of E2(high) and two Raman- and infrared-active modes of A1(LO) and E1(TO) of the wurtzite InN are clearly observed at 488.7, 582.7 and 486 cm-1, respectively. These results leading to conclude that the wurtzite InN thin film with (101) preferred growth orientation was successfully grown on 6H-SiC substrate.

Electrochemical Behavior of LiFePO4 Thin Film Prepared by RF Magnetron Sputtering in Li2SO4 Aqueous Electrolyte

2015 ◽  
Vol 14 (01n02) ◽  
pp. 1460027 ◽  
Author(s):  
Jiaxiong Wu ◽  
Wei Cai ◽  
Guangyi Shang
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Ion Diffusion ◽  
X Ray Diffraction ◽  
Electrochemical Tests ◽  
Force Microscopy ◽  
Atomic Force ◽  
Li Ion ◽  
Deposited Film

LiFePO 4 films were deposited on Au / Si substrate by radio-frequency magnetron sputtering. The effect of annealing on the crystallization and morphology of LiFePO 4 thin film has been investigated. X-ray diffraction revealed that the films through annealing were well crystallized compared with as-deposited films. The surface morphology of the thin film was also observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Electrochemical tests in 1M Li 2 SO 4 showed that the annealed thin film in 500°C exhibits larger Li -ion diffusion coefficient (3.46 × 10-7 cm2s-1) than as-deposited film and powder. Furthermore, cyclic voltammetry demonstrate a well-defined lithium intercalation/deintercalation reaction at around 0.45 V versus SCE (i.e., 3.6 V versus Li +/ Li ), suggesting that the annealed LiFePO 4 thin film is a promising candidate cathode film for lithium microbatteries.

Studies of Hydroxyapatite Thin Coating Produced by Dual RF Magnetron Sputtering for Biomedical Applications

2011 ◽  
Vol 493-494 ◽  
pp. 473-476
Author(s):  
E.O. Lopez ◽  
F.F. Borghi ◽  
Alexandre Mello ◽  
J. Gomes ◽  
Antonella M. Rossi
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Time ◽  
Grazing Incidence ◽  
Rf Magnetron Sputtering ◽  
Nanocrystalline Phase ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sputtering Power

In this present work, we characterize HAp thin films deposited by dual magnetron sputtering device DMS on silicon (Si/HAp). The sputtering RF power was varied from 90 watts to 120 watts and deposition times from 60 to 180 minutes. The argon and oxygen pressure were fixed at 5.0 mTorr and 1.0 mTorr, respectively. Grazing incidence X-ray diffraction (GIXRD) from synchrotron radiation, infrared spectroscopy (FTIR) and atomic force microscopy (AFM) were used for the structural characterization. At lower deposition times, a crystalline phase with preferential orientation along apatite (002) and a disordered nanocrystalline phase were identified. The coating crystallinity was improved with the increase of the deposition time besides the sputtering power.

scholarly journals Study the structural and optical properties of nanostructure ZnS thin film prepared by Radio frequency (RF) magnetron sputtering technique

2019 ◽  
Vol 24 (6) ◽  
pp. 93
Author(s):  
Azhar Mohammed Abed1 ◽  
, Abdulhussain K. Elttayef2 ◽  
Khalid Hamdi Razeg1
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Sem Image ◽  
Maximum Particle ◽  
Uv Visible ◽  
Different Thickness

Zinc sulfide (ZnS) thin films were deposited on glass substrate with different thickness by radiofrequency (RF) magnetron sputtering technique, and deals with effect of thickness on the optical and structural properties. The structure, surface morphology and optical properties are investigated by x-ray diffraction (XRD), atomic forces microscopy (AFM), scanning electron microscopy, and UV-visible spectrophotometer.  The result of XRD show that ZnS thin film exhibited cubic structure with strong peaks at (111) as highly preferential orientation. The maximum particle size of films was found to be 14.4 at thickness 868nm. SEM image show that the shape of grain is like spherical. The result of AFM shows that the surface roughness decrease with increasing in film thickness from (6.19 to 1.45)nm. The result of UV-visible suggests that transmittance increasing with increases in film thickness, the value maximum of ZnS transmission was 87.82%  at thickness 868nm, can be very much useful in the field of solar cell and optical sensor .   http://dx.doi.org/10.25130/tjps.24.2019.113

Influence of Sputtering Power on Structural and Optical Properties of ZnO Films Fabricated by RF Magnetron Sputtering

2014 ◽  
Vol 1053 ◽  
pp. 325-331
Author(s):  
Yang Zhou ◽  
Hong Fang Zheng ◽  
Guang Zhao ◽  
Man Li ◽  
Bao Ting Liu
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Axis Orientation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Light Region ◽  
Sputtering Power ◽  
Average Transmission

ZnO thin film has been fabricated on sapphire substrate (0001) using RF magnetron sputtering at room temperature. The influence of sputtering power ranging from 10 W to 70 W on the microstructural and optical properties of ZnO films is investigated by atomic force microscopy (AFM), X-ray diffraction (XRD), ultraviolet-visible spectrophotometer. The AFM results show that with the increase of sputtering power, the size of ZnO crystalline increases first, then decrease and the maximum grain size occurs at 50 W. The XRD measurements indicate that the ZnO films with wurtzite structure are highly c-axis orientation and the film fabricated at 50 W has the best crystalline quality. Optical transmission spectra of the ZnO samples demonstrate that the ZnO film obtained at 50 W has the higher average transmission (above 90%) in the visible-light region and its optical band gap is 3.26 eV.

Role of Sputtering Power on the Structural and Optical Properties of ZnO/SiO2 Films Deposited by Radio Frequency Magnetron Sputtering

2013 ◽  
Vol 760-762 ◽  
pp. 776-779
Author(s):  
Shuang Li ◽  
Ming Chen ◽  
Feng Xiang Wang
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Force Microscopy ◽  
Sputtering Power

In the present work, we investigated the effect of sputtering power on the structural and optical properties of ZnO films by radio frequency (rf) magnetron sputtering. Atom force microscopy (AFM), X-ray diffraction (XRD) and Prism coupling method were adopted to investigate the structure and optical properties of ZnO thin films deposited by sputtering powers in the range from 100~150W. XRD and AFM results shown that ZnO films with high c-axis preferred orientation crystalline structures have been successfully deposited under higher sputtering power condition. Moreover, it was also found that the indexes refractive of the films obtained by higher sputtering power are less than that of the bulk ZnO materials, which is closer to Crystal Refractive index.

C− Outgrowths in C+ Thin Films of LiNbO3 on Al2O3-c

1994 ◽  
Vol 341 ◽  
Author(s):  
J. J. Kingston ◽  
D. K. Fork ◽  
F. Leplingard ◽  
F. A. Ponce
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Optical Losses ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Preferential Nucleation ◽  
Thin Film Waveguides

AbstractThin-film waveguides of LiNbO3 have been grown on Al2O3-c by off-axis rf magnetron sputtering. The films have been characterized optically by prism coupling measurements, crystallographically by x-ray diffraction, and morphologically by atomic force microscopy. We find that optical losses can be dominated by scattering from large outgrowths that litter the surface of the film. These outgrowths are c− grains imbedded in a c+ matrix. Although some grains nucleate c−, others have their polarity reversed from c+ to c− after nucleation. A model will be presented to explain the preferential nucleation of c+ grains on Al2O3-c. The c− grains grow much faster than the c+ ones because of attractive coulombic forces between the c− grains and the ionized Li and Nb species in the sputter plume.

Effect of Sputtering Conditions on the Microstructures of YNiBi Thin Film

2013 ◽  
Vol 341-342 ◽  
pp. 149-152
Author(s):  
Guo Hua Wang ◽  
Niu Yi Sun ◽  
Juan Qin ◽  
Wei Min Shi ◽  
Lin Jun Wang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Structure ◽  
Root Mean Square Roughness ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Diffraction Peaks ◽  
Xrd Patterns ◽  
Sputtering Pressure

Half-Heusler compound YNiBi thin films have been prepared by direct current (DC) magnetron sputtering from an YNiBi target. The film structure and surface morphology of YNiBi thin films were analyzed with X-ray diffraction (XRD) and atomic force microscopy (AFM). The electrical properties of the films were studied by Hall measurements. XRD patterns show that the films prepared at lower sputtering pressure and higher growth temperature exhibit minimum full width at half maximum (FWHM) and maximum diffraction peaks which belong to the same family of crystal planes. Results of AFM reveal that the surface of a variety of fabricated YNiBi films is smooth and keeps good adhesion to the substrate. The increasing of substrate temperature and slightly lowering of sputtering pressure are in favor of reducing the root mean square roughness during magnetron sputtering process. The film with high crystallinity has an electrical conductivity of 938 S/cm and carrier concentration of 2.15×1021cm-3.

Effects of Growth Temperature on the Structural Properties of Zinc Oxide Nanograins Deposited by RF Magnetron Sputtering

2014 ◽  
Vol 895 ◽  
pp. 500-504
Author(s):  
N. Ameera ◽  
A. Shuhaimi ◽  
S. Najwa ◽  
K.M. Hakim ◽  
M. Mazwan ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Growth Temperature ◽  
Deposition Time ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force

Nanograins zinc oxide (ZnO) withc-axis preferred orientation was deposited on glass substrates by RF magnetron sputtering. It was performed with a ZnO target with 99.999% purity at RF power of 200 W. The deposition was carried out in argon and oxygen ambient at the ratio flow-rates of 10 and 5 sccm respectively, with total deposition time of 1 hour. The films were grown atgrowth temperatures were specified at RT, 100, 200, 300, 400 and 500°C. The effects of the growth temperature on the ZnO structural property was investigated by x-ray diffraction (XRD). The best ZnO crystalline quality obtained at growth temperature, TGof 300°C was further characterized by field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM).

Synthesis and Morphology of ZnO Films Prepared by Magnetron Sputtering

2013 ◽  
Vol 307 ◽  
pp. 333-336
Author(s):  
Shiuh Chuan Her ◽  
Tsung Chi Chi
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Xrd Patterns

Zinc oxide (ZnO) thin films were deposited on glass substrate by Radio frequency (RF) magnetron sputtering. The effect of substrate temperature on the microstructure of the ZnO films has been investigated. Crystal structure and surface morphology of the films were examined by X-ray diffraction (XRD) and atomic force microscopy (AFM). XRD patterns and AFM images show that the crystallinity and grain size are increasing with the increase of substrate temperature.

Influence of Post Annealing Temperature on the Properties of ZnO Films Prepared by RF Magnetron Sputtering

2012 ◽  
Vol 576 ◽  
pp. 602-606
Author(s):  
Samsiah Ahmad ◽  
N.D.M. Sin ◽  
M.N. Berhan ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Post Annealing ◽  
Current Voltage ◽  
Post Annealing Temperature

Zinc Oxide (ZnO) films were prepared on unheated glass substrate by radio frequency (RF) magnetron sputtering technique and post deposition annealing of the ZnO thin film were performed at 350, 400, 450 and 500°C. Post annealing temperature was found to improve the structural and electrical characteristics of the deposited films. The structural properties of the films were carried out by the surface profiler, X-Ray diffraction (XRD), atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM) while the electrical properties were measured using current voltage (I-V) probe measurement system. All samples exhibit the (002) peak and the sample annealed at 500°C gives the highest crystalline quality, highest Rms roughness (1.819 nm) and highest electrical conductivity (3.28 x 10-3 Sm-1).

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