IMPROVING THE PHOTORESPONSE OF POROUS SILICON FOR SOLAR CELL APPLICATIONS BY EMBEDDING OF CdTe NANOPARTICLES

2017 ◽  
Vol 24 (Supp01) ◽  
pp. 1850012 ◽  
Author(s):  
IBRAHIM R. AGOOL ◽  
AHMED N. ABD ◽  
MOHAMMED O. DAWOOD ◽  
HARITH M. ABD AL-AMEER ◽  
NADIR F. HABUBI ◽  
...  
Keyword(s):  
Solar Cell ◽  
Porous Silicon ◽  
Electrochemical Etching ◽  
Etching Time ◽  
Reverse Bias Voltage ◽  
Tunneling Microscopy ◽  
Laser Ablation In Liquid ◽  
Force Microscopy ◽  
Cdte Nanoparticles ◽  
Atomic Force

The present work is concerned with the preparation of thin films of nanocrystalline porous silicon (PSi) by the method of electrochemical etching. CdTe nanoparticles (NPs) have been prepared by utilizing the pulsed laser ablation in liquid. The measurements of tunneling microscopy, X-ray diffraction (XRD), Fourier transformation infrared spectroscopy (FTIR) and atomic force microscopy (AFE) were carried out and revealed that the PSi was nanostructured and the produced CdTe NPs were ball shaped, having good disposability. The diffusion of CdTe NPs on the properties of PSi solar cell assures that there was an improvement upon their properties. The relationship between [Formula: see text] and the reverse bias voltage was observed to be linear. Values of the built-in potential were observed to be dependent on the laser fluence, current density and the etching time.

scholarly journals The Effect of Etching Time On Structural Properties of Porous Quaternary AlInGaN Thin Films

2021 ◽  
Vol 19 (50) ◽  
pp. 77-83
Author(s):  
Ghasaq Ali Tomaa ◽  
Alaa Jabbar Ghazai
Keyword(s):  
Porous Silicon ◽  
Crystal Size ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Etching Time ◽  
Etching Technique ◽  
Force Microscopy ◽  
Atomic Force ◽  
Homogeneous Pattern

Using photo electrochemical etching technique (PEC), porous silicon (PS) layers were produced on n-type silicon (Si) wafers to generate porous silicon for n-type with an orientation of (111) The results of etching time were investigated at: (5,10,15 min). X-ray diffraction experiments revealed differences between the surface of the sample sheet and the synthesized porous silicon. The largest crystal size is (30 nm) and the lowest crystal size is (28.6 nm) The analysis of Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscope (FESEM) were used to research the morphology of porous silicon layer. As etching time increased, AFM findings showed that root mean square (RMS) of roughness and porous silicon grain size decreased and FESEM showed a homogeneous pattern and verified the formation of uniform porous silicon.

EFFECT OF ETCHING TIME ON OPTICAL AND MORPHOLOGICAL FEATURES OF N-TYPE POROUS SILICON PREPARED BY PHOTO-ELECTROCHEMICAL METHOD

2016 ◽  
Vol 78 (3) ◽  
Author(s):  
Asad A. Thahe ◽  
Noriah Bidin ◽  
Mohammed A. Al-Azawi ◽  
Naser M. Ahmed
Keyword(s):  
Porous Silicon ◽  
Gravimetric Method ◽  
Constant Current ◽  
Etching Time ◽  
Absorption Data ◽  
Time Duration ◽  
Constant Current Density ◽  
Force Microscopy ◽  
Atomic Force ◽  
Structure Properties

Achieving efficient visible photoluminescence from porous-silicon (PSi) is demanding for optoelectronic and solar cells applications. Improving the absorption and emission features of PSi is challenging. Photo-electro-chemical etching assisted formation of PSi layers on n-type (111) silicon (Si) wafers is reported. Samples are prepared at constant current density (~30 mA/cm2) under varying etching times of 10, 15, 20, 25, and 30 min. The influence of etching time duration on the growth morphology and spectral properties are inspected. Room temperature photoluminescence (PL) measurement is performed to determine the optical properties of as-synthesized samples. Sample morphologies are imaged via Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The thickness and porosity of the prepared samples are estimated using the gravimetric method. The emission and absorption data is further used to determine the samples band gap and electronic structure properties. Results and analyzed, interpreted with different mechanisms and compared.  

I-V and Surface Topography Study of Nanostructure Porous Silicon Layer Prepared by Electrochemical Etching

2012 ◽  
Vol 576 ◽  
pp. 519-522 ◽  
Author(s):  
Fadzilah Suhaimi Husairi ◽  
Maslihan Ain Zubaidah ◽  
Shamsul Faez M. Yusop ◽  
Rusop Mahmood Mohamad ◽  
Saifolah Abdullah
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Surface Topography ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
P Type

This article reports on the electrical properties of porous silicon nanostructures (PSiNs) in term of its surface topography. In this study, the PsiNs samples were prepared by using different current density during the electrochemical etching of p-type silicon wafer. PSiNs has been investigated its electrical properties and resistances for different surface topography of PSiNs via current-voltage (I-V) measurement system (Keithley 2400) while its physical structural properties was investigated by using atomic force microscopy (AFM-XE100).

scholarly journals Peculiarities of Photoluminescence in Porous Silicon Prepared by Metal-Assisted Chemical Etching

ISRN Optics ◽  
2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Igor Iatsunskyi ◽  
Valentin Smyntyna ◽  
Nykolai Pavlenko ◽  
Olga Sviridova
Keyword(s):  
Porous Silicon ◽  
Chemical Etching ◽  
Etching Time ◽  
Force Microscopy ◽  
Porous Layers ◽  
Atomic Force ◽  
Silicon Nanostructure ◽  
Metal Assisted Chemical Etching ◽  
Concentrated Solution ◽  
P Type

Photoluminescent (PL) porous layers were formed on p-type silicon by a metal-assisted chemical etching method using H2O2 as an oxidizing agent. Silver particles were deposited on the (100) Si surface prior to immersion in a solution of HF and H2O2. The morphology of the porous silicon (PS) layer formed by this method was investigated by atomic force microscopy (AFM). Depending on the metal-assisted chemical etching conditions, the macro- or microporous structures could be formed. Luminescence from metal-assisted chemically etched layers was measured. It was found that the PL intensity increases with increasing etching time. This behaviour is attributed to increase of the density of the silicon nanostructure. It was found the shift of PL peak to a green region with increasing of deposition time can be attributed to the change in porous morphology. Finally, the PL spectra of samples formed by high concentrated solution of AgNO3 showed two narrow peaks of emission at 520 and 550 nm. These peaks can be attributed to formation of AgF and AgF2 on a silicon surface.

Characterization of porous silicon for solar cell application by atomic force microscopy

1999 ◽  
Author(s):  
I. Simkiene ◽  
Valentinas J. Snitka ◽  
Kestutis Naudzius ◽  
Vaidas Pacebutas ◽  
Mindaugas Rackaitis
Keyword(s):  
Atomic Force Microscopy ◽  
Solar Cell ◽  
Porous Silicon ◽  
Solar Cell Application ◽  
Force Microscopy ◽  
Atomic Force

scholarly journals Morphology and luminescence of photo-electrochemically synthesized porous silicon: Influence of varying current density

2017 ◽  
Vol 13 (4) ◽  
pp. 708-710
Author(s):  
Asad Thahe ◽  
Hazri Bakhtiar ◽  
Noriah Bidin ◽  
Zainuriah Hassan ◽  
Zainal Abidin Talib ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Current Density ◽  
Room Temperature ◽  
Gravimetric Method ◽  
Etching Time ◽  
Time Duration ◽  
High Quality ◽  
Force Microscopy ◽  
Room Temperature Photoluminescence ◽  
Atomic Force

Achieving high quality porous silicon (PSi) materials with desired porosity remains challenging. Three good qualities of PSi samples are prepared by Photo electro-chemically etching a piece of n-type Si inside the solution of 20 M HF, 10 M C2H5OH and 10 M H2O2 at fixed etching time duration (30 min) and varying current density (15 mA/cm2, 30 mA/cm2 and 45 mA/cm2). As-prepared sample morphologies are characterized via scanning electron microscopy (SEM) and atomic force microscopy (AFM). The gravimetric method is used to estimate the thickness and porosity of the prepared samples. Current density (etching time) dependent morphologies, electronic bandgap and room temperature photoluminescence (PL) properties of such PSi nanostructures are evaluated. These PSi structures revealed enhanced rectifying characteristics with increasing current density. 

scholarly journals Study of the Electrical Properties of Porous Silicon Prepared by Electrochemical Etching Technique

2019 ◽  
Vol 54 (5) ◽  
Author(s):  
Warood Kream Alaarage ◽  
Luma Hafedh Abed Oneiza ◽  
Mohanad Ghulam Murad Alzubaidi
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Ideality Factor ◽  
Thermal Emission ◽  
Electrochemical Etching ◽  
Point Of View ◽  
Etching Technique ◽  
Force Microscopy ◽  
Atomic Force ◽  
P Type

In our work, a P-type porous silicon (PSi) with orientation (100) have been prepared using the chemical etching method; the goal is to study the electrical properties of PSi samples prepared with completely different etching current (7, 9, 11 and 13) mA and glued for (15 min) anodization time. Depending on the atomic force microscopy (AFM) investigation, we notice the roughness of Si surface increases with increasing etching current because of increases within the dimension (diameter) of surface pits. The electrical and optoelectronic properties of prepared PSi, specifically capacitance-voltage (C-V), current-voltage (I-V), responsivity and detectivity, are analyzed. It had been found that electrical characteristics of porous Si samples measured in dark (Id) and below illumination (IPh) will be fitted well by the equations of thermal emission. From this point of view, Schottky barrier height (ɸB) and ideality factor (n) of made-up photodetectors were calculated. We tended to determine from I-V characteristics of a dark, and illuminations that the pass current through the PSi layer reduced by increasing the etching current, as a result of increasing the electrical resistance of PSi layer and therefore the optimum value of ideality factor is (2.7), whereas from C-V characteristic we determined that in-built potential accumulated with increasing etching current. The results show that there are clear results for better performance of photodetectors.

STUDY OF POROUS SILICON SURFACE PROPERTIES

1996 ◽  
Vol 03 (02) ◽  
pp. 1235-1239
Author(s):  
K. W. CHEAH ◽  
T. Y. LEUNG ◽  
M. H. CHAN ◽  
S. K. SO
Keyword(s):  
Porous Silicon ◽  
Surface States ◽  
Silicon Layer ◽  
Structural Difference ◽  
Porous Silicon Layer ◽  
Etching Time ◽  
Free Standing ◽  
Force Microscopy ◽  
Photothermal Deflection Spectroscopy ◽  
Atomic Force

Porous silicon is a material with a coral-like structure which has a fractal surface. To study these aspects of porous silicon and its relationship with the luminescence property, we have used atomic force microscopy (AFM). Samples were prepared using either pure HF or HF diluted with ethanol. From the results of AFM, distinct structural difference was observed from samples prepared by these two etchants. If we relate the structures to their respective photoluminescence spectra, it appears that finer structure produced shorter wavelength peak photoluminescence. However, the columns of the samples were too large for one to attribute the luminescence to quantum confinement only. Hence, an alternative model may be required to explain the luminescence mechanism. We have also observed that the composition of the etchant can also affect the evolution of the fractal dimension with respect to etching time. Probing of the surfcace electron states was performed using photothermal deflection spectroscopy (PDS). In order to ensure that only porous silicon layer was probed, free-standing films of various porosity were produced for the PDS measurement. The probe energy range was from 0.56 eV to 2.5 eV so that both the bulk states and the surface states were probed. The results showed that there is a clear blueshift of the energy band gap with respect to porosity, and the absorption coefficient decreases with porosity increase at a fixed photon energy. Overtones of hydrides and fluorides of silicon were also observed.

Porous Silicon Layer by Electrochemical Etching for Silicon Solar Cell

2007 ◽  
Vol 124-126 ◽  
pp. 987-990 ◽  
Author(s):  
Jeong Kim ◽  
Sang Wook Park ◽  
In Sik Moon ◽  
Moon Jae Lee ◽  
Dae Won Kim
Keyword(s):  
Solar Cell ◽  
Porous Silicon ◽  
Silicon Surface ◽  
Crystalline Silicon ◽  
Electrochemical Etching ◽  
Incident Light ◽  
Silicon Layer ◽  
Antireflection Coating ◽  
Constant Current ◽  
Etching Time

An Electrochemical etching was used to form the porous silicon (PS) layer on the surface of the crystalline silicon wafer. The PS layer, in this study, will act as an antireflection coating to reduce the reflection of the incident light into the solar cell. The etching solution (electrolyte) was prepared by mixing HF (50%) and ethanol which was introduced for efficient bubble elimination on the silicon surface during etching process. The anodization of the silicon surface was performed under a constant current (galvanostat mode of the power supply), and process parameters, such as current density and etching time, were carefully tuned to minimize the surface reflectance of the heavily-doped wafer with sheet resistance between 20-30 / .

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