X-RAY SPECTROSCOPIC ANALYSIS OF BORON-NITRIDE CLUSTERS DEPOSITED BY ION-PLATING METHOD

1996 ◽  
Vol 03 (01) ◽  
pp. 1051-1057 ◽  
Author(s):  
H. KOHZUKI ◽  
M. MOTOYAMA ◽  
T. KANEYOSHI ◽  
Y. KOWADA ◽  
J. KAWAI ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Emission Spectrum ◽  
Cubic Boron Nitride ◽  
Emission Spectra ◽  
Satellite Peak ◽  
X Ray ◽  
Ion Plating ◽  
Hartree Fock ◽  
Plating Method ◽  
Diffraction Patterns

Cubic boron-nitride (c-BN) films were deposited on a silicon substrate by varying the deposition time, using a reactive ion-plating method. In order to investigate the growth mechanism of c-BN films, these c-BN films were characterized by x-ray emission spectra of boron (B K x-ray emission spectra), infrared absorption spectra, selected area diffraction patterns, and TEM microstructures. It was found that the BN film with sp2 bonding formed initially on the substrate and subsequently c-BN film formed. The c-BN film was composed of fine crystallites with a size of about 10 nm and with random orientation. In the case of the B K x-ray emission spectrum from the BN film with sp 2 bonding, the intensity of the satellite peak at the short-wavelength side was extremely stronger than that of sp 2-bonded BN-like turbostratic or hexagonal BN. As a result of calculation of the B K x-ray emission spectrum of BN using the discrete variational Hartree-Fock-Slater (DV-Xα) method, it was found that the satellite peak intensity increased with formation of the fine BN cluster having two-coordinated boron (which has a dangling bond) and with decreasing size of the cluster. Therefore, it is considered that the BN film with sp 2 bonding was composed of the very fine BN cluster having two-coordinated borons, and became the precursor of c-BN film at the interface between the substrate and c-BN film.

Soft X-ray emission spectra and band structure in cubic boron nitride

1996 ◽  
Vol 79 ◽  
pp. 191-194 ◽  
Author(s):  
A. Agui ◽  
S. Shin ◽  
M. Fujisawa ◽  
Y. Tezuka ◽  
T. Ishii ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Band Structure ◽  
Cubic Boron Nitride ◽  
Emission Spectra ◽  
X Ray

Theoretical and experimental investigation of point defects in cubic boron nitride

MRS Advances ◽  
2017 ◽  
Vol 2 (29) ◽  
pp. 1545-1550 ◽  
Author(s):  
Nicholas L. McDougall ◽  
Jim G. Partridge ◽  
Desmond W. M. Lau ◽  
Philipp Reineck ◽  
Brant C. Gibson ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Optical Emission ◽  
Wide Band ◽  
Wide Band Gap ◽  
Edge Structure ◽  
X Ray ◽  
Substitutional Defects ◽  
X Ray Absorption ◽  
Annealing Experiments

ABSTRACTCubic boron nitride (cBN) is a synthetic wide band gap material that has attracted attention due to its high thermal conductivity, optical transparency and optical emission. In this work, defects in cBN have been investigated using experimental and theoretical X-ray absorption near edge structure (XANES). Vacancy and O substitutional defects were considered, with O substituted at the N site (ON) to be the most energetically favorable. All defects produce unique signatures in either the B or N K-edges and can thus be identified using XANES. The calculations coupled with electron-irradiation / annealing experiments strongly suggest that ON is the dominant defect in irradiated cBN and remains after annealing. This defect is a likely source of optical emission in cBN.

X-ray absorption studies of phase formation in a Ti/TiN coating on cubic boron nitride

2004 ◽  
Vol 362 (1-2) ◽  
pp. 171-177 ◽  
Author(s):  
E Piskorska ◽  
K Lawniczak-Jablonska ◽  
I.N Demchenko ◽  
E Benko ◽  
E Welter
Keyword(s):  
Boron Nitride ◽  
Phase Formation ◽  
Cubic Boron Nitride ◽  
Tin Coating ◽  
X Ray ◽  
Absorption Studies ◽  
X Ray Absorption

scholarly journals Bi3+ and Eu3+ Activated Luminescent Behaviors in Non-Stoichiometric LaO0.65F1.7 Structure

Materials ◽  
2020 ◽  
Vol 13 (10) ◽  
pp. 2326
Author(s):  
Sungjun Yang ◽  
Sangmoon Park
Keyword(s):  
Optical Materials ◽  
Emission Spectra ◽  
Lattice Energy ◽  
Host Lattice ◽  
X Ray Diffraction ◽  
Unit Cell Parameters ◽  
X Ray ◽  
Cell Parameters ◽  
Diffraction Patterns ◽  
Cation Sites

Optical materials composed of La1-p-qBipEuqO0.65F1.7 (p = 0.001–0.05, q = 0–0.1) were prepared via a solid-state reaction using La(Bi,Eu)2O3 and NH4F precursors at 1050 °C for two hours. X-ray diffraction patterns of the phosphors were obtained permitting the calculation of unit-cell parameters. The two La3+ cation sites were clearly distinguished by exploiting the photoluminescence excitation and emission spectra through Bi3+ and Eu3+ transitions in the non-stoichiometric host lattice. Energy transfer from Bi3+ to Eu3+ upon excitation with 286 nm radiation and its mechanism in the Bi3+- and Eu3+-doped host structures is discussed. The desired Commission Internationale de l’Eclairage values, including emissions in blue-green, white, and red wavelength regions, were obtained from the Bi3+- and Eu3+-doped LaO0.65F1.7 phosphors.

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