Lattice Distortion of Microcrystalline Cubic Boron Nitride Measured by X-Ray Diffraction

In order to produce new generation monolayer brazing CBN(cubic boron nitride) grinding wheels, an active filler alloys(Ag-Cu-Ti) were tested in vacuum furnace. The results show that Ag-Cu-Ti alloy exhibits good wetting and bonding toward as CBN grits. SEMEDS microanalyses have shown that during brazing Ti in Ag-Cu-Ti alloy segregated preferentially to the surface of the CBN to form a Ti-rich reaction produce. X-ray diffraction reveals that the wetting and bonding behaviour on CBN surface by Ag-Cu-Ti alloy melt is realized through TiN and TiB2 which is produced by interaction between Ti atoms of Ag-Cu-Ti alloy and N or B atoms of CBN surface.

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Powder X-ray Diffraction Electron Density of Cubic Boron Nitride

The Journal of Physical Chemistry C ◽

10.1021/jp511985d ◽

2015 ◽

Vol 119 (11) ◽

pp. 6164-6173 ◽

Cited By ~ 10

Author(s):

Nanna Wahlberg ◽

Niels Bindzus ◽

Lasse Bjerg ◽

Jacob Becker ◽

Sebastian Christensen ◽

...

Keyword(s):

Boron Nitride ◽

Electron Density ◽

Cubic Boron Nitride ◽

X Ray Diffraction ◽

X Ray ◽

Diffraction Electron

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Microstructural studies of boron nitride films deposited by microwave plasma-assisted chemical vapor deposition by using trimethyl borazine precursor

Journal of Materials Research ◽

10.1557/jmr.1999.0110 ◽

1999 ◽

Vol 14 (3) ◽

pp. 829-833 ◽

Cited By ~ 10

Author(s):

A. Ratna Phani

Keyword(s):

Boron Nitride ◽

Microwave Plasma ◽

Cubic Boron Nitride ◽

Chemical Vapor ◽

Interplanar Distance ◽

Stoichiometric Ratio ◽

X Ray Diffraction ◽

X Ray ◽

Different Temperatures ◽

Deposited Films

Thin films of cubic boron nitride (c-BN) were synthesized using an organometallic precursor trimethylborazine (TMB) which contains both boron and nitrogen in 1 : 1 stoichiometric ratio. The films were deposited at different temperatures ranging from 300 to 500 °C at a pressure of 2 Torr and at 360 W microwave power, using N2 as carrier gas. The deposited films were characterized by Fourier transform infrared spectroscopy (FTIR), x-ray diffraction (XRD), and scanning electron microscopy (SEM), which reveal the presence of amorphous BN and crystalline c-BN in varying proportions. The x-ray diffraction pattern of the deposited films showed a strongest peak at 2θ = 57.1° where the interplanar distance value, d = 2.06 Å, agreed well with the (111) crystallographic orientation of c-BN phase.

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Synthesis and Decomposition of Ti3SiC2 under 1-5GPa at 1400°C

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.602-603.499 ◽

2014 ◽

Vol 602-603 ◽

pp. 499-502 ◽

Cited By ~ 4

Author(s):

Yuan Yuan Zhu ◽

Shang Sheng Li ◽

Liang Li ◽

Ai Guo Zhou

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

High Pressure ◽

Phase Transformation ◽

Boron Nitride ◽

Cubic Boron Nitride ◽

X Ray Diffraction ◽

X Ray ◽

Ternary Carbide ◽

Scanning Electron

Ternary carbide Ti3SiC2 is a good binder to make superhard composites with diamonds or cubic boron nitride. Superhard composites are normally made at high temperature and under high pressure around 5 GPa to avoid the phase transformation of diamonds or cubic boron nitride. This paper researched the synthesis of Ti3SiC2 from the powders of Ti, Si, and graphite by a cubic presser under 1 GPa to 4 GPa at 1400°C. The decomposition of Ti3SiC2 under 5GPa at 1400°C was also researched. From X-ray diffraction (XRD) and scanning electron microscopy (SEM) results, Ti3SiC2 was synthesized in 30 min under 1 GPa at 1400°C. The impurities were TiSi2, Ti5Si3Cx, and TiC. As the pressure increased from 1GPa to 4GPa, less Ti3SiC2 more TiSi2 was synthesized. Therefore, high presser > 1GPa is unfavorable for the synthesis of Ti3SiC2. After treated under 5GPa at 1400°C, pure Ti3SiC2 was decomposed.

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X-Ray Diffraction Study of Cubic Boron Nitride Grown Epitaxially on Silicon

MRS Proceedings ◽

10.1557/proc-202-333 ◽

1990 ◽

Vol 202 ◽

Author(s):

G. L. Doll ◽

J. A. Sell ◽

A. Wims ◽

C. A. Taylor ◽

R. Clarke

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Boron Nitride ◽

Cubic Boron Nitride ◽

X Ray Diffraction ◽

X Ray ◽

Lattice Matching ◽

Excimer Laser Ablation ◽

Transmission Electron ◽

Boron Nitride Films

ABSTRACTWe report the growth of boron nitride films on (001), (110), and (111) faces of silicon using the method of pulsed excimer laser ablation. The structure of the Alms grown on the (001) and (110) orientations of Si is cubic zincblende with a lattice constant of 3.619 Å. The films were found to be heteroepitaxial on silicon (001) with the cubic BN (100) axes parallel to Si (100), as characterized by x-ray diffraction and high-resolution transmission electron microscopy. In that system, we find evidence for an unusual 3:2 commensurate lattice matching. The films appear to cubic but randomly oriented on the Si (110), and no evidence for crystallinity is found for films grown on Si (111).

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Stress analysis in cubic boron nitride films by x-ray diffraction using sin 2 ψ method

Acta Physica Sinica (Overseas Edition) ◽

10.1088/1004-423x/7/1/007 ◽

1998 ◽

Vol 7 (1) ◽

pp. 61-67 ◽

Cited By ~ 1

Author(s):

Zhang Xing-wang ◽

Yue Jin-shun ◽

Chen Guang-hua ◽

Yan Hui ◽

Liu Wen-jun

Keyword(s):

Boron Nitride ◽

Stress Analysis ◽

Cubic Boron Nitride ◽

X Ray Diffraction ◽

X Ray ◽

Boron Nitride Films

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High Pressure and High Temperature Sintered PcBN Using Al, B4C and C as Sintering Additive

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.697.521 ◽

2016 ◽

Vol 697 ◽

pp. 521-525 ◽

Cited By ~ 1

Author(s):

Yao Ma ◽

Jian Li ◽

Hai Long Wang ◽

Rui Zhang

Keyword(s):

High Pressure ◽

High Temperature ◽

Boron Nitride ◽

Cubic Boron Nitride ◽

High Strength ◽

X Ray Diffraction ◽

X Ray ◽

Polycrystalline Cubic Boron Nitride ◽

Starting Mixture ◽

Sintering Additive

Polycrystalline cubic boron nitride (PcBN) composites were sintered by high pressure and high temperature sintering (HPHT) at 1450 °C for 3 min under a pressure of 5.0 GPa. Aluminium,boron carbide and carbon in the starting mixture reacts with cubic boron nitride (cBN) to form Al3BC3 and AlN bonding among cBN grains during sintering. X-ray diffraction (XRD) and Scanning electron microscope (SEM) were used to analyze phases and micro-structure of the sintered samples. The dense structure of super hard cBN grains bonded together with Al3BC3 and AlN offers superior hardness and high strength. The Vickers hardness of PcBN composites was 45±5 GPa, and the strength of PcBN composites was 345±15 MPa.

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Theoretical and experimental investigation of point defects in cubic boron nitride

MRS Advances ◽

10.1557/adv.2017.53 ◽

2017 ◽

Vol 2 (29) ◽

pp. 1545-1550 ◽

Cited By ~ 1

Author(s):

Nicholas L. McDougall ◽

Jim G. Partridge ◽

Desmond W. M. Lau ◽

Philipp Reineck ◽

Brant C. Gibson ◽

...

Keyword(s):

Boron Nitride ◽

Cubic Boron Nitride ◽

Optical Emission ◽

Wide Band ◽

Wide Band Gap ◽

Edge Structure ◽

X Ray ◽

Substitutional Defects ◽

X Ray Absorption ◽

Annealing Experiments

ABSTRACTCubic boron nitride (cBN) is a synthetic wide band gap material that has attracted attention due to its high thermal conductivity, optical transparency and optical emission. In this work, defects in cBN have been investigated using experimental and theoretical X-ray absorption near edge structure (XANES). Vacancy and O substitutional defects were considered, with O substituted at the N site (ON) to be the most energetically favorable. All defects produce unique signatures in either the B or N K-edges and can thus be identified using XANES. The calculations coupled with electron-irradiation / annealing experiments strongly suggest that ON is the dominant defect in irradiated cBN and remains after annealing. This defect is a likely source of optical emission in cBN.

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