RAPID THERMAL ANNEALING INDUCED ENHANCED BAND-EDGE EMISSION FROM ZnO NANOWIRES, NANORODS AND NANORIBBONS

2011 ◽  
Vol 04 (01) ◽  
pp. 25-29 ◽  
Author(s):  
SOUMEN DHARA ◽  
P. K. GIRI

In this letter, we report on the enhanced near band edge (NBE) photoluminescence (PL) emission by rapid thermal annealing (RTA) of ZnO nanowires, nanoribbons and nanorods synthesized by vapor transport method using a ZnO nanopowder source. As a result of RTA, the intensity ratio of NBE to green emission peak is nearly doubled for the nanowires, while this enhancement is one order of magnitude for the nanoribbons and nanorods. Time-resolved PL studies on the green emission band shows a single-exponential decay (time constant ~ns) after RTA. The Raman spectral shift of the RTA treated samples indicates reduced tensile strain in the annealed ZnO nanostructures. Our results demonstrate the effectiveness of RTA process for improving the crystallinity and optical properties of ZnO nanostructures.

2010 ◽  
Vol 21 (6) ◽  
pp. 065709 ◽  
Author(s):  
A Dev ◽  
R Niepelt ◽  
J P Richters ◽  
C Ronning ◽  
T Voss

2007 ◽  
Vol 90 (8) ◽  
pp. 083113 ◽  
Author(s):  
Congkang Xu ◽  
Junghwan Chun ◽  
Dong Eon Kim ◽  
Ju-Jin Kim ◽  
Bonghwan Chon ◽  
...  

Author(s):  
Vitaliy Avrutin ◽  
Michael A. Reshchikov ◽  
Natalia Izyumskaya ◽  
Ryoko Shimada ◽  
Steve W. Novak ◽  
...  

2009 ◽  
Vol 1206 ◽  
Author(s):  
Yanbo Li ◽  
Ryohei Uchino ◽  
Takero Tokizono ◽  
Alexander Paulsen ◽  
Miao Zhong ◽  
...  

AbstractZnO nanowires with strong green emission synthesized by chemical vapor deposition were treated using hydrogen plasma. The effect of hydrogen plasma treatment was studied by means of photoluminescence and photoconductivity. A strong passivation of the green emission and a significant enhancement of the near band edge emission were found after the hydrogen plasma treatment. The conductivity of the nanowires in dark was increased by more than 3 orders of magnitude. The photoconductivity also increased after the hydrogen plasma treatment. The observed changes in the luminescence and photoconductive properties of the ZnO nanowires were likely caused by hydrogen atoms occupying both oxygen vacancies and interstitial sites.


2010 ◽  
Vol 100 (1) ◽  
pp. 165-170 ◽  
Author(s):  
Qing Zhao ◽  
Tuocheng Cai ◽  
Sheng Wang ◽  
Rui Zhu ◽  
Zhimin Liao ◽  
...  

RSC Advances ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 2180-2188 ◽  
Author(s):  
Ashish C. Gandhi ◽  
Ching-Hao Liao ◽  
Wei-Li Yeh ◽  
Yue-Lin Huang

To comprehensively understand the behaviors of the near-band-edge emission and green emission (NBE, GE), the volume-weighting (VW) model is adapted to take into account a dead layer of confined excitons.


2012 ◽  
Vol 501 ◽  
pp. 179-183 ◽  
Author(s):  
Siti Khadijah Mohd Bakhori ◽  
Chuo Ann Ling ◽  
Shahrom Mahmud

The influence of annealing on the optical properties of as-grown ZnO nanostructures prepared in pellets has been investigated by photoluminescence (PL) and Raman spectroscopy. The annealing temperatures of ZnO nanostructure at 600°C, 650°C and 700 °C were conducted in oxygen (O2) and nitrogen (N2) ambient. The near band edge emission (NBE) of samples recorded in the PL spectra demonstrates significant changes on optical signal whereby the NBE is redshifted after O2 annealed and became slightly higher in N2 annealed. Apart from that, weak green luminescence (GL) namely deep band emission (DBE) is observed centre at 532.95 nm (2.23 eV) and 511.00 nm (2.42 eV) for annealed in O2 and N2 respectively, whereas lower DBE observed in as-grown ZnO. On the other hand, Raman shift reveal the phonon mode of the ZnO nanostructures and the E2 (high) mode were downshifted as annealed in O2 ambient, and upshifted in N2 ambient. The downshift and upshift of the E2 (high) mode are correlated to tensile and compressive stress. Moreover the crystallite sizes were calculated from FWHM of XRD and TEM microscopy reveals the nanoplates structure of ZnO nanostructures.


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